$Application of X-ray diffraction methods in the study of micrometer-sized porous Si layers$

Application of X-ray diffraction methods in the study of micrometer-sized porous Si layers

An X-ray analysis of porous silicon layers (Sb-doped n + -Si(111)) obtained by anodic oxidation for different times with a current of 50 mA/cm 2 is performed by the methods of double-crystal rocking curves and total external reflection. A nondestructive method for monitoring the stationary process o...

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Veröffentlicht in:	Crystallography reports 2009-05, Vol.54 (3), p.379-385
Hauptverfasser:	Lomov, A. A., Bushuev, V. A., Kartsev, A. A., Karavanskiĭ, V. A., Vasil’ev, A. L.
Format:	Artikel
Sprache:	eng
Schlagworte:	ANTIMONY CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY Crystallography and Scattering Methods CRYSTALS DEBYE-WALLER FACTOR Diffraction and Scattering of Ionizing Radiations DOPED MATERIALS LAYERS OXIDATION Physics Physics and Astronomy POROSITY POROUS MATERIALS REFLECTION SILICON STRAINS X RADIATION X-RAY DIFFRACTION
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