Application of X-ray diffraction methods in the study of micrometer-sized porous Si layers
An X-ray analysis of porous silicon layers (Sb-doped n + -Si(111)) obtained by anodic oxidation for different times with a current of 50 mA/cm 2 is performed by the methods of double-crystal rocking curves and total external reflection. A nondestructive method for monitoring the stationary process o...
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| Veröffentlicht in: | Crystallography reports 2009-05, Vol.54 (3), p.379-385 |
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| container_end_page | 385 |
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| container_issue | 3 |
| container_start_page | 379 |
| container_title | Crystallography reports |
| container_volume | 54 |
| creator | Lomov, A. A. Bushuev, V. A. Kartsev, A. A. Karavanskiĭ, V. A. Vasil’ev, A. L. |
| description | An X-ray analysis of porous silicon layers (Sb-doped
n
+
-Si(111)) obtained by anodic oxidation for different times with a current of 50 mA/cm
2
is performed by the methods of double-crystal rocking curves and total external reflection. A nondestructive method for monitoring the stationary process of the formation of micrometer-sized porous silicon layers and estimating their porosity and thickness is proposed. The parameters obtained for porous silicon layers with a thickness of ∼6 μm are confirmed by the joint processing of diffraction curves for the 111 and 333 reflections on the basis of the developed model of dynamic scattering from layers while taking into account the strain profiles Δ
d
(
z
)/
d
, the static Debye-Waller factor
f
(
z
), and the porosity
P
(
z
). The advantages and drawbacks of the proposed method are discussed. |
| doi_str_mv | 10.1134/S1063774509030031 |
| format | Article |
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n
+
-Si(111)) obtained by anodic oxidation for different times with a current of 50 mA/cm
2
is performed by the methods of double-crystal rocking curves and total external reflection. A nondestructive method for monitoring the stationary process of the formation of micrometer-sized porous silicon layers and estimating their porosity and thickness is proposed. The parameters obtained for porous silicon layers with a thickness of ∼6 μm are confirmed by the joint processing of diffraction curves for the 111 and 333 reflections on the basis of the developed model of dynamic scattering from layers while taking into account the strain profiles Δ
d
(
z
)/
d
, the static Debye-Waller factor
f
(
z
), and the porosity
P
(
z
). The advantages and drawbacks of the proposed method are discussed.</description><identifier>ISSN: 1063-7745</identifier><identifier>EISSN: 1562-689X</identifier><identifier>DOI: 10.1134/S1063774509030031</identifier><language>eng</language><publisher>Dordrecht: SP MAIK Nauka/Interperiodica</publisher><subject>ANTIMONY ; CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ; Crystallography and Scattering Methods ; CRYSTALS ; DEBYE-WALLER FACTOR ; Diffraction and Scattering of Ionizing Radiations ; DOPED MATERIALS ; LAYERS ; OXIDATION ; Physics ; Physics and Astronomy ; POROSITY ; POROUS MATERIALS ; REFLECTION ; SILICON ; STRAINS ; X RADIATION ; X-RAY DIFFRACTION</subject><ispartof>Crystallography reports, 2009-05, Vol.54 (3), p.379-385</ispartof><rights>Pleiades Publishing, Ltd. 2009</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c316t-e20c850eddea8fe0548bae797f0040884f00cf7cc0b904d7ccbc870127cb1db53</citedby><cites>FETCH-LOGICAL-c316t-e20c850eddea8fe0548bae797f0040884f00cf7cc0b904d7ccbc870127cb1db53</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1134/S1063774509030031$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1134/S1063774509030031$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>230,314,780,784,885,27924,27925,41488,42557,51319</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/22050841$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Lomov, A. A.</creatorcontrib><creatorcontrib>Bushuev, V. A.</creatorcontrib><creatorcontrib>Kartsev, A. A.</creatorcontrib><creatorcontrib>Karavanskiĭ, V. A.</creatorcontrib><creatorcontrib>Vasil’ev, A. L.</creatorcontrib><title>Application of X-ray diffraction methods in the study of micrometer-sized porous Si layers</title><title>Crystallography reports</title><addtitle>Crystallogr. Rep</addtitle><description>An X-ray analysis of porous silicon layers (Sb-doped
n
+
-Si(111)) obtained by anodic oxidation for different times with a current of 50 mA/cm
2
is performed by the methods of double-crystal rocking curves and total external reflection. A nondestructive method for monitoring the stationary process of the formation of micrometer-sized porous silicon layers and estimating their porosity and thickness is proposed. The parameters obtained for porous silicon layers with a thickness of ∼6 μm are confirmed by the joint processing of diffraction curves for the 111 and 333 reflections on the basis of the developed model of dynamic scattering from layers while taking into account the strain profiles Δ
d
(
z
)/
d
, the static Debye-Waller factor
f
(
z
), and the porosity
P
(
z
). The advantages and drawbacks of the proposed method are discussed.</description><subject>ANTIMONY</subject><subject>CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY</subject><subject>Crystallography and Scattering Methods</subject><subject>CRYSTALS</subject><subject>DEBYE-WALLER FACTOR</subject><subject>Diffraction and Scattering of Ionizing Radiations</subject><subject>DOPED MATERIALS</subject><subject>LAYERS</subject><subject>OXIDATION</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><subject>POROSITY</subject><subject>POROUS MATERIALS</subject><subject>REFLECTION</subject><subject>SILICON</subject><subject>STRAINS</subject><subject>X RADIATION</subject><subject>X-RAY DIFFRACTION</subject><issn>1063-7745</issn><issn>1562-689X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2009</creationdate><recordtype>article</recordtype><recordid>eNp9UMFKAzEUDKJgrX6At4Dn1Zfd7G72WIpaoeChCsXLkk1ebEq7WZL0sH69qfUmeHrDm5nHvCHklsE9YwV_WDGoirrmJTRQABTsjExYWeVZJZr1ecKJzo78JbkKYQsAQjA-IR-zYdhZJaN1PXWGrjMvR6qtMV6qn-Ue48bpQG1P4wZpiAc9HpV7q7xLJPos2C_UdHDeHQJdWbqTI_pwTS6M3AW8-Z1T8v70-DZfZMvX55f5bJmpglUxwxyUKAG1RikMQslFJ7FuagPAU0qepjK1UtA1wHUCnRI1sLxWHdNdWUzJ3emuC9G2QdmIaqNc36OKbZ5DCYKzpGInVUodgkfTDt7upR9bBu2xwvZPhcmTnzwhaftP9O3WHXyfnvnH9A2_ZnO-</recordid><startdate>20090501</startdate><enddate>20090501</enddate><creator>Lomov, A. A.</creator><creator>Bushuev, V. A.</creator><creator>Kartsev, A. A.</creator><creator>Karavanskiĭ, V. A.</creator><creator>Vasil’ev, A. L.</creator><general>SP MAIK Nauka/Interperiodica</general><scope>AAYXX</scope><scope>CITATION</scope><scope>OTOTI</scope></search><sort><creationdate>20090501</creationdate><title>Application of X-ray diffraction methods in the study of micrometer-sized porous Si layers</title><author>Lomov, A. A. ; Bushuev, V. A. ; Kartsev, A. A. ; Karavanskiĭ, V. A. ; Vasil’ev, A. L.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c316t-e20c850eddea8fe0548bae797f0040884f00cf7cc0b904d7ccbc870127cb1db53</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2009</creationdate><topic>ANTIMONY</topic><topic>CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY</topic><topic>Crystallography and Scattering Methods</topic><topic>CRYSTALS</topic><topic>DEBYE-WALLER FACTOR</topic><topic>Diffraction and Scattering of Ionizing Radiations</topic><topic>DOPED MATERIALS</topic><topic>LAYERS</topic><topic>OXIDATION</topic><topic>Physics</topic><topic>Physics and Astronomy</topic><topic>POROSITY</topic><topic>POROUS MATERIALS</topic><topic>REFLECTION</topic><topic>SILICON</topic><topic>STRAINS</topic><topic>X RADIATION</topic><topic>X-RAY DIFFRACTION</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Lomov, A. A.</creatorcontrib><creatorcontrib>Bushuev, V. A.</creatorcontrib><creatorcontrib>Kartsev, A. A.</creatorcontrib><creatorcontrib>Karavanskiĭ, V. A.</creatorcontrib><creatorcontrib>Vasil’ev, A. L.</creatorcontrib><collection>CrossRef</collection><collection>OSTI.GOV</collection><jtitle>Crystallography reports</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Lomov, A. A.</au><au>Bushuev, V. A.</au><au>Kartsev, A. A.</au><au>Karavanskiĭ, V. A.</au><au>Vasil’ev, A. L.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Application of X-ray diffraction methods in the study of micrometer-sized porous Si layers</atitle><jtitle>Crystallography reports</jtitle><stitle>Crystallogr. Rep</stitle><date>2009-05-01</date><risdate>2009</risdate><volume>54</volume><issue>3</issue><spage>379</spage><epage>385</epage><pages>379-385</pages><issn>1063-7745</issn><eissn>1562-689X</eissn><abstract>An X-ray analysis of porous silicon layers (Sb-doped
n
+
-Si(111)) obtained by anodic oxidation for different times with a current of 50 mA/cm
2
is performed by the methods of double-crystal rocking curves and total external reflection. A nondestructive method for monitoring the stationary process of the formation of micrometer-sized porous silicon layers and estimating their porosity and thickness is proposed. The parameters obtained for porous silicon layers with a thickness of ∼6 μm are confirmed by the joint processing of diffraction curves for the 111 and 333 reflections on the basis of the developed model of dynamic scattering from layers while taking into account the strain profiles Δ
d
(
z
)/
d
, the static Debye-Waller factor
f
(
z
), and the porosity
P
(
z
). The advantages and drawbacks of the proposed method are discussed.</abstract><cop>Dordrecht</cop><pub>SP MAIK Nauka/Interperiodica</pub><doi>10.1134/S1063774509030031</doi><tpages>7</tpages></addata></record> |
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| identifier | ISSN: 1063-7745 |
| ispartof | Crystallography reports, 2009-05, Vol.54 (3), p.379-385 |
| issn | 1063-7745 1562-689X |
| language | eng |
| recordid | cdi_osti_scitechconnect_22050841 |
| source | SpringerLink Journals - AutoHoldings |
| subjects | ANTIMONY CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY Crystallography and Scattering Methods CRYSTALS DEBYE-WALLER FACTOR Diffraction and Scattering of Ionizing Radiations DOPED MATERIALS LAYERS OXIDATION Physics Physics and Astronomy POROSITY POROUS MATERIALS REFLECTION SILICON STRAINS X RADIATION X-RAY DIFFRACTION |
| title | Application of X-ray diffraction methods in the study of micrometer-sized porous Si layers |
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