Absorptivity of semiconductors used in the production of solar cell panels

The dependence of the absorptivity of semiconductors on the thickness of the absorbing layer is studied for crystalline silicon ( c -Si), amorphous silicon ( a -Si), cadmium telluride (CdTe), copper indium diselenide (CuInSe 2 , CIS), and copper gallium diselenide (CuGaSe 2 , CGS). The calculations...

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Veröffentlicht in:	Semiconductors (Woodbury, N.Y.) N.Y.), 2012-04, Vol.46 (4), p.466-470
Hauptverfasser:	Kosyachenko, L. A., Grushko, E. V., Mikityuk, T. I.
Format:	Artikel
Sprache:	eng
Schlagworte:	ABSORPTION ABSORPTIVITY CADMIUM CADMIUM TELLURIDES COPPER DISTRIBUTION GALLIUM INDIUM Interaction with Radiation LAYERS Light Magnetic Materials Magnetism MATERIALS SCIENCE Nuclear radiation PENETRATION DEPTH Physics Physics and Astronomy SEMICONDUCTOR MATERIALS Semiconductors SILICON SOLAR CELLS Solar collectors SOLAR RADIATION Spectroscopy THICKNESS WAVELENGTHS
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