Tuning the properties of Ge-quantum dots superlattices in amorphous silica matrix through deposition conditions
In this work, we investigate the structural properties of Ge quantum dot lattices in amorphous silica matrix, prepared by low-temperature magnetron sputtering deposition of (Ge+SiO{sub 2})/SiO{sub 2} multilayers. The dependence of quantum dot shape, size, separation, and arrangement type on the Ge-r...
Gespeichert in:
| Veröffentlicht in: | Journal of applied physics 2012-04, Vol.111 (7) |
|---|---|
| Hauptverfasser: | , , , , , , , , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | 7 |
| container_start_page | |
| container_title | Journal of applied physics |
| container_volume | 111 |
| creator | Pinto, S. R. C. Ramos, M. M. D. Gomes, M. J. M. Buljan, M. Chahboun, A. Physics Department, FST Tanger, Tanger BP 416 Roldan, M. A. Molina, S. I. Bernstorff, S. Varela, M. Pennycook, S. J. Barradas, N. P. Alves, E. |
| description | In this work, we investigate the structural properties of Ge quantum dot lattices in amorphous silica matrix, prepared by low-temperature magnetron sputtering deposition of (Ge+SiO{sub 2})/SiO{sub 2} multilayers. The dependence of quantum dot shape, size, separation, and arrangement type on the Ge-rich (Ge + SiO{sub 2}) layer thickness is studied. We show that the quantum dots are elongated along the growth direction, perpendicular to the multilayer surface. The size of the quantum dots and their separation along the growth direction can be tuned by changing the Ge-rich layer thickness. The average value of the quantum dots size along the lateral (in-plane) direction along with their lateral separation is not affected by the thickness of the Ge-rich layer. However, the thickness of the Ge-rich layer significantly affects the quantum dot ordering. In addition, we investigate the dependence of the multilayer average atomic composition and also the quantum dot crystalline quality on the deposition parameters. |
| doi_str_mv | 10.1063/1.3702776 |
| format | Article |
| fullrecord | <record><control><sourceid>osti</sourceid><recordid>TN_cdi_osti_scitechconnect_22038903</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>22038903</sourcerecordid><originalsourceid>FETCH-osti_scitechconnect_220389033</originalsourceid><addsrcrecordid>eNqNjMtqwzAQRUVpoO5j0T8QdO1kZJHIWpc-PiD7IGQlnmBrXM0I-vk1pR_Q1T1wDlepZwNbAwe7M1vroHPucKMaA71v3X4Pt6oB6Ezbe-fv1D3zFcCY3vpG0bFmzBctY9JLoSUVwcSazvojtV81ZKmzHkhYc13lFEQwrgFmHWYqy0h1VThhDHoOUvB7vSpUL6Me0kKMgpR1pDz8Ej-qzTlMnJ7-9kG9vL8dXz9bYsETR5QUxzXPKcqp68D2Hqz9X_UD9zBRKw</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Tuning the properties of Ge-quantum dots superlattices in amorphous silica matrix through deposition conditions</title><source>AIP Journals Complete</source><source>AIP Digital Archive</source><source>Alma/SFX Local Collection</source><creator>Pinto, S. R. C. ; Ramos, M. M. D. ; Gomes, M. J. M. ; Buljan, M. ; Chahboun, A. ; Physics Department, FST Tanger, Tanger BP 416 ; Roldan, M. A. ; Molina, S. I. ; Bernstorff, S. ; Varela, M. ; Pennycook, S. J. ; Barradas, N. P. ; Alves, E.</creator><creatorcontrib>Pinto, S. R. C. ; Ramos, M. M. D. ; Gomes, M. J. M. ; Buljan, M. ; Chahboun, A. ; Physics Department, FST Tanger, Tanger BP 416 ; Roldan, M. A. ; Molina, S. I. ; Bernstorff, S. ; Varela, M. ; Pennycook, S. J. ; Barradas, N. P. ; Alves, E.</creatorcontrib><description>In this work, we investigate the structural properties of Ge quantum dot lattices in amorphous silica matrix, prepared by low-temperature magnetron sputtering deposition of (Ge+SiO{sub 2})/SiO{sub 2} multilayers. The dependence of quantum dot shape, size, separation, and arrangement type on the Ge-rich (Ge + SiO{sub 2}) layer thickness is studied. We show that the quantum dots are elongated along the growth direction, perpendicular to the multilayer surface. The size of the quantum dots and their separation along the growth direction can be tuned by changing the Ge-rich layer thickness. The average value of the quantum dots size along the lateral (in-plane) direction along with their lateral separation is not affected by the thickness of the Ge-rich layer. However, the thickness of the Ge-rich layer significantly affects the quantum dot ordering. In addition, we investigate the dependence of the multilayer average atomic composition and also the quantum dot crystalline quality on the deposition parameters.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.3702776</identifier><language>eng</language><publisher>United States</publisher><subject>AMORPHOUS STATE ; CRYSTAL GROWTH ; DEPOSITION ; GERMANIUM ; INTERFACES ; LAYERS ; MATERIALS SCIENCE ; MATRIX MATERIALS ; NANOSCIENCE AND NANOTECHNOLOGY ; QUANTUM DOTS ; SEMICONDUCTOR MATERIALS ; SILICON OXIDES ; SPUTTERING ; SUPERLATTICES ; SURFACES ; THICKNESS</subject><ispartof>Journal of applied physics, 2012-04, Vol.111 (7)</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,314,776,780,881,27901,27902</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/22038903$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Pinto, S. R. C.</creatorcontrib><creatorcontrib>Ramos, M. M. D.</creatorcontrib><creatorcontrib>Gomes, M. J. M.</creatorcontrib><creatorcontrib>Buljan, M.</creatorcontrib><creatorcontrib>Chahboun, A.</creatorcontrib><creatorcontrib>Physics Department, FST Tanger, Tanger BP 416</creatorcontrib><creatorcontrib>Roldan, M. A.</creatorcontrib><creatorcontrib>Molina, S. I.</creatorcontrib><creatorcontrib>Bernstorff, S.</creatorcontrib><creatorcontrib>Varela, M.</creatorcontrib><creatorcontrib>Pennycook, S. J.</creatorcontrib><creatorcontrib>Barradas, N. P.</creatorcontrib><creatorcontrib>Alves, E.</creatorcontrib><title>Tuning the properties of Ge-quantum dots superlattices in amorphous silica matrix through deposition conditions</title><title>Journal of applied physics</title><description>In this work, we investigate the structural properties of Ge quantum dot lattices in amorphous silica matrix, prepared by low-temperature magnetron sputtering deposition of (Ge+SiO{sub 2})/SiO{sub 2} multilayers. The dependence of quantum dot shape, size, separation, and arrangement type on the Ge-rich (Ge + SiO{sub 2}) layer thickness is studied. We show that the quantum dots are elongated along the growth direction, perpendicular to the multilayer surface. The size of the quantum dots and their separation along the growth direction can be tuned by changing the Ge-rich layer thickness. The average value of the quantum dots size along the lateral (in-plane) direction along with their lateral separation is not affected by the thickness of the Ge-rich layer. However, the thickness of the Ge-rich layer significantly affects the quantum dot ordering. In addition, we investigate the dependence of the multilayer average atomic composition and also the quantum dot crystalline quality on the deposition parameters.</description><subject>AMORPHOUS STATE</subject><subject>CRYSTAL GROWTH</subject><subject>DEPOSITION</subject><subject>GERMANIUM</subject><subject>INTERFACES</subject><subject>LAYERS</subject><subject>MATERIALS SCIENCE</subject><subject>MATRIX MATERIALS</subject><subject>NANOSCIENCE AND NANOTECHNOLOGY</subject><subject>QUANTUM DOTS</subject><subject>SEMICONDUCTOR MATERIALS</subject><subject>SILICON OXIDES</subject><subject>SPUTTERING</subject><subject>SUPERLATTICES</subject><subject>SURFACES</subject><subject>THICKNESS</subject><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2012</creationdate><recordtype>article</recordtype><recordid>eNqNjMtqwzAQRUVpoO5j0T8QdO1kZJHIWpc-PiD7IGQlnmBrXM0I-vk1pR_Q1T1wDlepZwNbAwe7M1vroHPucKMaA71v3X4Pt6oB6Ezbe-fv1D3zFcCY3vpG0bFmzBctY9JLoSUVwcSazvojtV81ZKmzHkhYc13lFEQwrgFmHWYqy0h1VThhDHoOUvB7vSpUL6Me0kKMgpR1pDz8Ej-qzTlMnJ7-9kG9vL8dXz9bYsETR5QUxzXPKcqp68D2Hqz9X_UD9zBRKw</recordid><startdate>20120401</startdate><enddate>20120401</enddate><creator>Pinto, S. R. C.</creator><creator>Ramos, M. M. D.</creator><creator>Gomes, M. J. M.</creator><creator>Buljan, M.</creator><creator>Chahboun, A.</creator><creator>Physics Department, FST Tanger, Tanger BP 416</creator><creator>Roldan, M. A.</creator><creator>Molina, S. I.</creator><creator>Bernstorff, S.</creator><creator>Varela, M.</creator><creator>Pennycook, S. J.</creator><creator>Barradas, N. P.</creator><creator>Alves, E.</creator><scope>OTOTI</scope></search><sort><creationdate>20120401</creationdate><title>Tuning the properties of Ge-quantum dots superlattices in amorphous silica matrix through deposition conditions</title><author>Pinto, S. R. C. ; Ramos, M. M. D. ; Gomes, M. J. M. ; Buljan, M. ; Chahboun, A. ; Physics Department, FST Tanger, Tanger BP 416 ; Roldan, M. A. ; Molina, S. I. ; Bernstorff, S. ; Varela, M. ; Pennycook, S. J. ; Barradas, N. P. ; Alves, E.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-osti_scitechconnect_220389033</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2012</creationdate><topic>AMORPHOUS STATE</topic><topic>CRYSTAL GROWTH</topic><topic>DEPOSITION</topic><topic>GERMANIUM</topic><topic>INTERFACES</topic><topic>LAYERS</topic><topic>MATERIALS SCIENCE</topic><topic>MATRIX MATERIALS</topic><topic>NANOSCIENCE AND NANOTECHNOLOGY</topic><topic>QUANTUM DOTS</topic><topic>SEMICONDUCTOR MATERIALS</topic><topic>SILICON OXIDES</topic><topic>SPUTTERING</topic><topic>SUPERLATTICES</topic><topic>SURFACES</topic><topic>THICKNESS</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Pinto, S. R. C.</creatorcontrib><creatorcontrib>Ramos, M. M. D.</creatorcontrib><creatorcontrib>Gomes, M. J. M.</creatorcontrib><creatorcontrib>Buljan, M.</creatorcontrib><creatorcontrib>Chahboun, A.</creatorcontrib><creatorcontrib>Physics Department, FST Tanger, Tanger BP 416</creatorcontrib><creatorcontrib>Roldan, M. A.</creatorcontrib><creatorcontrib>Molina, S. I.</creatorcontrib><creatorcontrib>Bernstorff, S.</creatorcontrib><creatorcontrib>Varela, M.</creatorcontrib><creatorcontrib>Pennycook, S. J.</creatorcontrib><creatorcontrib>Barradas, N. P.</creatorcontrib><creatorcontrib>Alves, E.</creatorcontrib><collection>OSTI.GOV</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Pinto, S. R. C.</au><au>Ramos, M. M. D.</au><au>Gomes, M. J. M.</au><au>Buljan, M.</au><au>Chahboun, A.</au><au>Physics Department, FST Tanger, Tanger BP 416</au><au>Roldan, M. A.</au><au>Molina, S. I.</au><au>Bernstorff, S.</au><au>Varela, M.</au><au>Pennycook, S. J.</au><au>Barradas, N. P.</au><au>Alves, E.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Tuning the properties of Ge-quantum dots superlattices in amorphous silica matrix through deposition conditions</atitle><jtitle>Journal of applied physics</jtitle><date>2012-04-01</date><risdate>2012</risdate><volume>111</volume><issue>7</issue><issn>0021-8979</issn><eissn>1089-7550</eissn><abstract>In this work, we investigate the structural properties of Ge quantum dot lattices in amorphous silica matrix, prepared by low-temperature magnetron sputtering deposition of (Ge+SiO{sub 2})/SiO{sub 2} multilayers. The dependence of quantum dot shape, size, separation, and arrangement type on the Ge-rich (Ge + SiO{sub 2}) layer thickness is studied. We show that the quantum dots are elongated along the growth direction, perpendicular to the multilayer surface. The size of the quantum dots and their separation along the growth direction can be tuned by changing the Ge-rich layer thickness. The average value of the quantum dots size along the lateral (in-plane) direction along with their lateral separation is not affected by the thickness of the Ge-rich layer. However, the thickness of the Ge-rich layer significantly affects the quantum dot ordering. In addition, we investigate the dependence of the multilayer average atomic composition and also the quantum dot crystalline quality on the deposition parameters.</abstract><cop>United States</cop><doi>10.1063/1.3702776</doi></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0021-8979 |
| ispartof | Journal of applied physics, 2012-04, Vol.111 (7) |
| issn | 0021-8979 1089-7550 |
| language | eng |
| recordid | cdi_osti_scitechconnect_22038903 |
| source | AIP Journals Complete; AIP Digital Archive; Alma/SFX Local Collection |
| subjects | AMORPHOUS STATE CRYSTAL GROWTH DEPOSITION GERMANIUM INTERFACES LAYERS MATERIALS SCIENCE MATRIX MATERIALS NANOSCIENCE AND NANOTECHNOLOGY QUANTUM DOTS SEMICONDUCTOR MATERIALS SILICON OXIDES SPUTTERING SUPERLATTICES SURFACES THICKNESS |
| title | Tuning the properties of Ge-quantum dots superlattices in amorphous silica matrix through deposition conditions |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-21T21%3A45%3A10IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-osti&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Tuning%20the%20properties%20of%20Ge-quantum%20dots%20superlattices%20in%20amorphous%20silica%20matrix%20through%20deposition%20conditions&rft.jtitle=Journal%20of%20applied%20physics&rft.au=Pinto,%20S.%20R.%20C.&rft.date=2012-04-01&rft.volume=111&rft.issue=7&rft.issn=0021-8979&rft.eissn=1089-7550&rft_id=info:doi/10.1063/1.3702776&rft_dat=%3Costi%3E22038903%3C/osti%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |