Growth and electrical characterisation of {delta}-doped boron layers on (111) diamond surfaces
A plasma enhanced chemical vapor deposition protocol for the growth of {delta}-doping of boron in diamond is presented, using the (111) diamond plane as a substrate for diamond growth. AC Hall effect measurements have been performed on oxygen terminated {delta}-layers and desirable sheet carrier den...
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| Veröffentlicht in: | Journal of applied physics 2012-02, Vol.111 (3) |
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| container_title | Journal of applied physics |
| container_volume | 111 |
| creator | Edgington, Robert Jackman, Richard B. Sato, Syunsuke Ishiyama, Yuichiro Kawarada, Hiroshi Morris, Richard |
| description | A plasma enhanced chemical vapor deposition protocol for the growth of {delta}-doping of boron in diamond is presented, using the (111) diamond plane as a substrate for diamond growth. AC Hall effect measurements have been performed on oxygen terminated {delta}-layers and desirable sheet carrier densities ({approx}10{sup 13} cm{sup -2}) for field-effect transistor application are reported with mobilities in excess of what would expected for equivalent but thicker heavily boron-doped diamond films. Temperature-dependent impedance spectroscopy and secondary ion mass spectroscopy measurements show that the grown layers have metallic-like electrical properties with high cut-off frequencies and low thermal impedance activation energies with estimated boron concentrations of approximately 10{sup 20} cm{sup -3}. |
| doi_str_mv | 10.1063/1.3682760 |
| format | Article |
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AC Hall effect measurements have been performed on oxygen terminated {delta}-layers and desirable sheet carrier densities ({approx}10{sup 13} cm{sup -2}) for field-effect transistor application are reported with mobilities in excess of what would expected for equivalent but thicker heavily boron-doped diamond films. 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AC Hall effect measurements have been performed on oxygen terminated {delta}-layers and desirable sheet carrier densities ({approx}10{sup 13} cm{sup -2}) for field-effect transistor application are reported with mobilities in excess of what would expected for equivalent but thicker heavily boron-doped diamond films. 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AC Hall effect measurements have been performed on oxygen terminated {delta}-layers and desirable sheet carrier densities ({approx}10{sup 13} cm{sup -2}) for field-effect transistor application are reported with mobilities in excess of what would expected for equivalent but thicker heavily boron-doped diamond films. Temperature-dependent impedance spectroscopy and secondary ion mass spectroscopy measurements show that the grown layers have metallic-like electrical properties with high cut-off frequencies and low thermal impedance activation energies with estimated boron concentrations of approximately 10{sup 20} cm{sup -3}.</abstract><cop>United States</cop><doi>10.1063/1.3682760</doi></addata></record> |
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| identifier | ISSN: 0021-8979 |
| ispartof | Journal of applied physics, 2012-02, Vol.111 (3) |
| issn | 0021-8979 1089-7550 |
| language | eng |
| recordid | cdi_osti_scitechconnect_22038855 |
| source | AIP Journals Complete; AIP Digital Archive; Alma/SFX Local Collection |
| subjects | BORON CARRIER DENSITY CHEMICAL VAPOR DEPOSITION CRYSTAL GROWTH CRYSTAL STRUCTURE DIAMONDS DOPED MATERIALS ELECTRICAL PROPERTIES HALL EFFECT IMPEDANCE LAYERS MASS SPECTROSCOPY MATERIALS SCIENCE PLASMA SUBSTRATES TEMPERATURE DEPENDENCE THIN FILMS |
| title | Growth and electrical characterisation of {delta}-doped boron layers on (111) diamond surfaces |
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