Influence of local atomic configuration in AlGdN phosphor thin films on deep ultra-violet luminescence intensity

We investigated the narrowband ultraviolet emission properties of Al 0.94 Gd 0.06 N phosphor thin films pumped by an electron beam. An extremely narrow luminescence line, which was less than 1 nm from the intra-orbital f-f transition in Gd 3+ ions, was confirmed at 318 nm. The corresponding emission...

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