Influence of local atomic configuration in AlGdN phosphor thin films on deep ultra-violet luminescence intensity
We investigated the narrowband ultraviolet emission properties of Al 0.94 Gd 0.06 N phosphor thin films pumped by an electron beam. An extremely narrow luminescence line, which was less than 1 nm from the intra-orbital f-f transition in Gd 3+ ions, was confirmed at 318 nm. The corresponding emission...
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| Veröffentlicht in: | Journal of applied physics 2011-11, Vol.110 (9), p.093108-093108-4 |
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| container_end_page | 093108-4 |
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| container_issue | 9 |
| container_start_page | 093108 |
| container_title | Journal of applied physics |
| container_volume | 110 |
| creator | Kitayama, Shinya Yoshitomi, Hiroaki Iwahashi, Shinya Nakamura, Junya Kita, Takashi Chigi, Yoshitaka Nishimoto, Tetsuro Tanaka, Hiroyuki Kobayashi, Mikihiro Ishihara, Tsuguo Izumi, Hirokazu |
| description | We investigated the narrowband ultraviolet emission properties of Al
0.94
Gd
0.06
N phosphor thin films pumped by an electron beam. An extremely narrow luminescence line, which was less than 1 nm from the intra-orbital
f-f
transition in Gd
3+
ions, was confirmed at 318 nm. The corresponding emission efficiency was improved by decreasing the growth temperature. The extended X-ray absorption fine structure analysis of the local atomic structure revealed that a low-temperature growth led to the formation of a uniform atomic configuration around Gd, which was found to play a key role in improving the luminescence intensity of the films. |
| doi_str_mv | 10.1063/1.3658845 |
| format | Article |
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0.94
Gd
0.06
N phosphor thin films pumped by an electron beam. An extremely narrow luminescence line, which was less than 1 nm from the intra-orbital
f-f
transition in Gd
3+
ions, was confirmed at 318 nm. The corresponding emission efficiency was improved by decreasing the growth temperature. The extended X-ray absorption fine structure analysis of the local atomic structure revealed that a low-temperature growth led to the formation of a uniform atomic configuration around Gd, which was found to play a key role in improving the luminescence intensity of the films.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.3658845</identifier><identifier>CODEN: JAPIAU</identifier><language>eng</language><publisher>United States: American Institute of Physics</publisher><subject>ABSORPTION SPECTROSCOPY ; ALUMINIUM COMPOUNDS ; CRYSTAL GROWTH ; ELECTRON BEAMS ; FINE STRUCTURE ; GADOLINIUM IONS ; GADOLINIUM NITRIDES ; IRRADIATION ; MATERIALS SCIENCE ; PHOSPHORS ; PHOTOLUMINESCENCE ; RADIATION EFFECTS ; SEMICONDUCTOR MATERIALS ; TEMPERATURE DEPENDENCE ; THIN FILMS ; ULTRAVIOLET RADIATION ; X-RAY SPECTROSCOPY</subject><ispartof>Journal of applied physics, 2011-11, Vol.110 (9), p.093108-093108-4</ispartof><rights>2011 American Institute of Physics</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c422t-309675008970b30355555d0dd0b11ba42d3255a7f09204e11865e4605d299b773</citedby><cites>FETCH-LOGICAL-c422t-309675008970b30355555d0dd0b11ba42d3255a7f09204e11865e4605d299b773</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/jap/article-lookup/doi/10.1063/1.3658845$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>230,314,780,784,794,885,1559,4512,27924,27925,76384,76390</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/22038752$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Kitayama, Shinya</creatorcontrib><creatorcontrib>Yoshitomi, Hiroaki</creatorcontrib><creatorcontrib>Iwahashi, Shinya</creatorcontrib><creatorcontrib>Nakamura, Junya</creatorcontrib><creatorcontrib>Kita, Takashi</creatorcontrib><creatorcontrib>Chigi, Yoshitaka</creatorcontrib><creatorcontrib>Nishimoto, Tetsuro</creatorcontrib><creatorcontrib>Tanaka, Hiroyuki</creatorcontrib><creatorcontrib>Kobayashi, Mikihiro</creatorcontrib><creatorcontrib>Ishihara, Tsuguo</creatorcontrib><creatorcontrib>Izumi, Hirokazu</creatorcontrib><title>Influence of local atomic configuration in AlGdN phosphor thin films on deep ultra-violet luminescence intensity</title><title>Journal of applied physics</title><description>We investigated the narrowband ultraviolet emission properties of Al
0.94
Gd
0.06
N phosphor thin films pumped by an electron beam. An extremely narrow luminescence line, which was less than 1 nm from the intra-orbital
f-f
transition in Gd
3+
ions, was confirmed at 318 nm. The corresponding emission efficiency was improved by decreasing the growth temperature. The extended X-ray absorption fine structure analysis of the local atomic structure revealed that a low-temperature growth led to the formation of a uniform atomic configuration around Gd, which was found to play a key role in improving the luminescence intensity of the films.</description><subject>ABSORPTION SPECTROSCOPY</subject><subject>ALUMINIUM COMPOUNDS</subject><subject>CRYSTAL GROWTH</subject><subject>ELECTRON BEAMS</subject><subject>FINE STRUCTURE</subject><subject>GADOLINIUM IONS</subject><subject>GADOLINIUM NITRIDES</subject><subject>IRRADIATION</subject><subject>MATERIALS SCIENCE</subject><subject>PHOSPHORS</subject><subject>PHOTOLUMINESCENCE</subject><subject>RADIATION EFFECTS</subject><subject>SEMICONDUCTOR MATERIALS</subject><subject>TEMPERATURE DEPENDENCE</subject><subject>THIN FILMS</subject><subject>ULTRAVIOLET RADIATION</subject><subject>X-RAY SPECTROSCOPY</subject><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2011</creationdate><recordtype>article</recordtype><recordid>eNp1kE1LxDAURYMoOI4u_AcBVy46viRNPzbCMOg4MOhG1yFNUyeSJqVJBf-9mQ_c-SA8eDlcuAehWwILAgV7IAtW8KrK-RmaEajqrOQcztEMgJKsqsv6El2F8AVASMXqGRo2rrOTdkpj32HrlbRYRt8bhZV3nfmcRhmNd9g4vLTr9hUPOx_SG3HcpVtnbB9w-m-1HvBk4yizb-OtjthOvXE6qEO4cVG7YOLPNbropA365rTn6OP56X31km3f1pvVcpupnNKYMaiLkkNqUELDgPH9tNC20BDSyJy2jHIuyw5qCrlObQqu8wJ4S-u6KUs2R3fHXB-iEUGZqNUuVXJaRUEpsKrkNFH3R0qNPoRRd2IYTS_HH0FA7IUKIk5CE_t4ZPdhByn_w39Whe_EwaqQ7Ber9HzY</recordid><startdate>20111101</startdate><enddate>20111101</enddate><creator>Kitayama, Shinya</creator><creator>Yoshitomi, Hiroaki</creator><creator>Iwahashi, Shinya</creator><creator>Nakamura, Junya</creator><creator>Kita, Takashi</creator><creator>Chigi, Yoshitaka</creator><creator>Nishimoto, Tetsuro</creator><creator>Tanaka, Hiroyuki</creator><creator>Kobayashi, Mikihiro</creator><creator>Ishihara, Tsuguo</creator><creator>Izumi, Hirokazu</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>OTOTI</scope></search><sort><creationdate>20111101</creationdate><title>Influence of local atomic configuration in AlGdN phosphor thin films on deep ultra-violet luminescence intensity</title><author>Kitayama, Shinya ; Yoshitomi, Hiroaki ; Iwahashi, Shinya ; Nakamura, Junya ; Kita, Takashi ; Chigi, Yoshitaka ; Nishimoto, Tetsuro ; Tanaka, Hiroyuki ; Kobayashi, Mikihiro ; Ishihara, Tsuguo ; Izumi, Hirokazu</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c422t-309675008970b30355555d0dd0b11ba42d3255a7f09204e11865e4605d299b773</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2011</creationdate><topic>ABSORPTION SPECTROSCOPY</topic><topic>ALUMINIUM COMPOUNDS</topic><topic>CRYSTAL GROWTH</topic><topic>ELECTRON BEAMS</topic><topic>FINE STRUCTURE</topic><topic>GADOLINIUM IONS</topic><topic>GADOLINIUM NITRIDES</topic><topic>IRRADIATION</topic><topic>MATERIALS SCIENCE</topic><topic>PHOSPHORS</topic><topic>PHOTOLUMINESCENCE</topic><topic>RADIATION EFFECTS</topic><topic>SEMICONDUCTOR MATERIALS</topic><topic>TEMPERATURE DEPENDENCE</topic><topic>THIN FILMS</topic><topic>ULTRAVIOLET RADIATION</topic><topic>X-RAY SPECTROSCOPY</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kitayama, Shinya</creatorcontrib><creatorcontrib>Yoshitomi, Hiroaki</creatorcontrib><creatorcontrib>Iwahashi, Shinya</creatorcontrib><creatorcontrib>Nakamura, Junya</creatorcontrib><creatorcontrib>Kita, Takashi</creatorcontrib><creatorcontrib>Chigi, Yoshitaka</creatorcontrib><creatorcontrib>Nishimoto, Tetsuro</creatorcontrib><creatorcontrib>Tanaka, Hiroyuki</creatorcontrib><creatorcontrib>Kobayashi, Mikihiro</creatorcontrib><creatorcontrib>Ishihara, Tsuguo</creatorcontrib><creatorcontrib>Izumi, Hirokazu</creatorcontrib><collection>CrossRef</collection><collection>OSTI.GOV</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Kitayama, Shinya</au><au>Yoshitomi, Hiroaki</au><au>Iwahashi, Shinya</au><au>Nakamura, Junya</au><au>Kita, Takashi</au><au>Chigi, Yoshitaka</au><au>Nishimoto, Tetsuro</au><au>Tanaka, Hiroyuki</au><au>Kobayashi, Mikihiro</au><au>Ishihara, Tsuguo</au><au>Izumi, Hirokazu</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Influence of local atomic configuration in AlGdN phosphor thin films on deep ultra-violet luminescence intensity</atitle><jtitle>Journal of applied physics</jtitle><date>2011-11-01</date><risdate>2011</risdate><volume>110</volume><issue>9</issue><spage>093108</spage><epage>093108-4</epage><pages>093108-093108-4</pages><issn>0021-8979</issn><eissn>1089-7550</eissn><coden>JAPIAU</coden><abstract>We investigated the narrowband ultraviolet emission properties of Al
0.94
Gd
0.06
N phosphor thin films pumped by an electron beam. An extremely narrow luminescence line, which was less than 1 nm from the intra-orbital
f-f
transition in Gd
3+
ions, was confirmed at 318 nm. The corresponding emission efficiency was improved by decreasing the growth temperature. The extended X-ray absorption fine structure analysis of the local atomic structure revealed that a low-temperature growth led to the formation of a uniform atomic configuration around Gd, which was found to play a key role in improving the luminescence intensity of the films.</abstract><cop>United States</cop><pub>American Institute of Physics</pub><doi>10.1063/1.3658845</doi><oa>free_for_read</oa></addata></record> |
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| identifier | ISSN: 0021-8979 |
| ispartof | Journal of applied physics, 2011-11, Vol.110 (9), p.093108-093108-4 |
| issn | 0021-8979 1089-7550 |
| language | eng |
| recordid | cdi_osti_scitechconnect_22038752 |
| source | AIP Journals Complete; AIP Digital Archive; Alma/SFX Local Collection |
| subjects | ABSORPTION SPECTROSCOPY ALUMINIUM COMPOUNDS CRYSTAL GROWTH ELECTRON BEAMS FINE STRUCTURE GADOLINIUM IONS GADOLINIUM NITRIDES IRRADIATION MATERIALS SCIENCE PHOSPHORS PHOTOLUMINESCENCE RADIATION EFFECTS SEMICONDUCTOR MATERIALS TEMPERATURE DEPENDENCE THIN FILMS ULTRAVIOLET RADIATION X-RAY SPECTROSCOPY |
| title | Influence of local atomic configuration in AlGdN phosphor thin films on deep ultra-violet luminescence intensity |
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