The electronic structure of co-sputtered zinc indium tin oxide thin films
Zinc indium tin oxide (ZITO) transparent conductive oxide layers were deposited via radio frequency (RF) magnetron co-sputtering at room temperature. A series of samples with gradually varying zinc content was investigated. The samples were characterized with x-ray and ultraviolet photoemission spec...
Gespeichert in:
| Veröffentlicht in: | Journal of applied physics 2011-10, Vol.110 (7), p.073711-073711-7 |
|---|---|
| Hauptverfasser: | , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 073711-7 |
|---|---|
| container_issue | 7 |
| container_start_page | 073711 |
| container_title | Journal of applied physics |
| container_volume | 110 |
| creator | Carreras, Paz Gutmann, Sebastian Antony, Aldrin Bertomeu, Joan Schlaf, Rudy |
| description | Zinc indium tin oxide (ZITO) transparent conductive oxide layers were deposited via radio frequency (RF) magnetron co-sputtering at room temperature. A series of samples with gradually varying zinc content was investigated. The samples were characterized with x-ray and ultraviolet photoemission spectroscopy (XPS, UPS) to determine the electronic structure of the surface. Valence and conduction bands maxima (VBM, CBM), and work function were determined. The experiments indicate that increasing Zn content results in films with a higher defect rate at the surface leading to the formation of a degenerately doped surface layer if the Zn content surpasses ∼50%. Furthermore, the experiments demonstrate that ZITO is susceptible to ultraviolet light induced work function reduction, similar to what was earlier observed on ITO and TiO
2
films. |
| doi_str_mv | 10.1063/1.3647780 |
| format | Article |
| fullrecord | <record><control><sourceid>csuc_osti_</sourceid><recordid>TN_cdi_osti_scitechconnect_22038731</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>oai_recercat_cat_2072_210210</sourcerecordid><originalsourceid>FETCH-LOGICAL-c389t-cf169663db73beab07aa223bccf6a532d92a4047bbaede23bffbe13a378817a23</originalsourceid><addsrcrecordid>eNp1kEtLAzEQgIMoWKsH_0HAk4etebSb7EWQ4qNQ8FLPITs7oZF2U5IsqL_e1BZ68jDMDPNNyHyE3HI24ayWD3wi66lSmp2REWe6qdRsxs7JiDHBK92o5pJcpfTJGOdaNiOyWK2R4gYhx9B7oCnHAfIQkQZHIVRpN-SMETv643ugvu_8sKXZ9zR8-Q5pXpfS-c02XZMLZzcJb455TD5enlfzt2r5_rqYPy0rkLrJFTheN3Utu1bJFm3LlLVCyBbA1XYmRdcIO2VT1bYWOywD51rk0kqlNVdWyDG5O7wbUvYmgc8Iawh9X24wQjCpleSF4gcK0gAmImAEm02w_tTsQzAljODFDis798edGFKK6Mwu-q2N34Yzs7druDnaLezjgd1_wGYf-v_hoticFJs_xfIXdRaCKw</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>The electronic structure of co-sputtered zinc indium tin oxide thin films</title><source>AIP Journals Complete</source><source>Recercat</source><source>AIP Digital Archive</source><source>Alma/SFX Local Collection</source><creator>Carreras, Paz ; Gutmann, Sebastian ; Antony, Aldrin ; Bertomeu, Joan ; Schlaf, Rudy</creator><creatorcontrib>Carreras, Paz ; Gutmann, Sebastian ; Antony, Aldrin ; Bertomeu, Joan ; Schlaf, Rudy</creatorcontrib><description>Zinc indium tin oxide (ZITO) transparent conductive oxide layers were deposited via radio frequency (RF) magnetron co-sputtering at room temperature. A series of samples with gradually varying zinc content was investigated. The samples were characterized with x-ray and ultraviolet photoemission spectroscopy (XPS, UPS) to determine the electronic structure of the surface. Valence and conduction bands maxima (VBM, CBM), and work function were determined. The experiments indicate that increasing Zn content results in films with a higher defect rate at the surface leading to the formation of a degenerately doped surface layer if the Zn content surpasses ∼50%. Furthermore, the experiments demonstrate that ZITO is susceptible to ultraviolet light induced work function reduction, similar to what was earlier observed on ITO and TiO
2
films.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.3647780</identifier><identifier>CODEN: JAPIAU</identifier><language>eng</language><publisher>United States: American Institute of Physics</publisher><subject>DEPOSITION ; DOPED MATERIALS ; Electrodes ; ELECTRONIC STRUCTURE ; Elèctrodes ; Estany ; Estructura electrònica ; INDIUM COMPOUNDS ; LAYERS ; MATERIALS SCIENCE ; Metallic oxides ; OPACITY ; Optical properties ; Pel·lícules fines ; PHOTOEMISSION ; Propietats òptiques ; SEMICONDUCTOR MATERIALS ; SPUTTERING ; SURFACES ; THIN FILMS ; Tin ; TIN OXIDES ; ULTRAVIOLET RADIATION ; VALENCE ; VISIBLE RADIATION ; WORK FUNCTIONS ; X-RAY PHOTOELECTRON SPECTROSCOPY ; ZINC COMPOUNDS ; Zinc oxide ; Òxid de zinc ; Òxids metàl·lics</subject><ispartof>Journal of applied physics, 2011-10, Vol.110 (7), p.073711-073711-7</ispartof><rights>2011 American Institute of Physics</rights><rights>(c) American Institute of Physics , 2011 info:eu-repo/semantics/openAccess</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c389t-cf169663db73beab07aa223bccf6a532d92a4047bbaede23bffbe13a378817a23</citedby><cites>FETCH-LOGICAL-c389t-cf169663db73beab07aa223bccf6a532d92a4047bbaede23bffbe13a378817a23</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/jap/article-lookup/doi/10.1063/1.3647780$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>230,314,776,780,790,881,1553,4497,26953,27903,27904,76130,76136</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/22038731$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Carreras, Paz</creatorcontrib><creatorcontrib>Gutmann, Sebastian</creatorcontrib><creatorcontrib>Antony, Aldrin</creatorcontrib><creatorcontrib>Bertomeu, Joan</creatorcontrib><creatorcontrib>Schlaf, Rudy</creatorcontrib><title>The electronic structure of co-sputtered zinc indium tin oxide thin films</title><title>Journal of applied physics</title><description>Zinc indium tin oxide (ZITO) transparent conductive oxide layers were deposited via radio frequency (RF) magnetron co-sputtering at room temperature. A series of samples with gradually varying zinc content was investigated. The samples were characterized with x-ray and ultraviolet photoemission spectroscopy (XPS, UPS) to determine the electronic structure of the surface. Valence and conduction bands maxima (VBM, CBM), and work function were determined. The experiments indicate that increasing Zn content results in films with a higher defect rate at the surface leading to the formation of a degenerately doped surface layer if the Zn content surpasses ∼50%. Furthermore, the experiments demonstrate that ZITO is susceptible to ultraviolet light induced work function reduction, similar to what was earlier observed on ITO and TiO
2
films.</description><subject>DEPOSITION</subject><subject>DOPED MATERIALS</subject><subject>Electrodes</subject><subject>ELECTRONIC STRUCTURE</subject><subject>Elèctrodes</subject><subject>Estany</subject><subject>Estructura electrònica</subject><subject>INDIUM COMPOUNDS</subject><subject>LAYERS</subject><subject>MATERIALS SCIENCE</subject><subject>Metallic oxides</subject><subject>OPACITY</subject><subject>Optical properties</subject><subject>Pel·lícules fines</subject><subject>PHOTOEMISSION</subject><subject>Propietats òptiques</subject><subject>SEMICONDUCTOR MATERIALS</subject><subject>SPUTTERING</subject><subject>SURFACES</subject><subject>THIN FILMS</subject><subject>Tin</subject><subject>TIN OXIDES</subject><subject>ULTRAVIOLET RADIATION</subject><subject>VALENCE</subject><subject>VISIBLE RADIATION</subject><subject>WORK FUNCTIONS</subject><subject>X-RAY PHOTOELECTRON SPECTROSCOPY</subject><subject>ZINC COMPOUNDS</subject><subject>Zinc oxide</subject><subject>Òxid de zinc</subject><subject>Òxids metàl·lics</subject><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2011</creationdate><recordtype>article</recordtype><sourceid>XX2</sourceid><recordid>eNp1kEtLAzEQgIMoWKsH_0HAk4etebSb7EWQ4qNQ8FLPITs7oZF2U5IsqL_e1BZ68jDMDPNNyHyE3HI24ayWD3wi66lSmp2REWe6qdRsxs7JiDHBK92o5pJcpfTJGOdaNiOyWK2R4gYhx9B7oCnHAfIQkQZHIVRpN-SMETv643ugvu_8sKXZ9zR8-Q5pXpfS-c02XZMLZzcJb455TD5enlfzt2r5_rqYPy0rkLrJFTheN3Utu1bJFm3LlLVCyBbA1XYmRdcIO2VT1bYWOywD51rk0kqlNVdWyDG5O7wbUvYmgc8Iawh9X24wQjCpleSF4gcK0gAmImAEm02w_tTsQzAljODFDis798edGFKK6Mwu-q2N34Yzs7druDnaLezjgd1_wGYf-v_hoticFJs_xfIXdRaCKw</recordid><startdate>20111001</startdate><enddate>20111001</enddate><creator>Carreras, Paz</creator><creator>Gutmann, Sebastian</creator><creator>Antony, Aldrin</creator><creator>Bertomeu, Joan</creator><creator>Schlaf, Rudy</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>XX2</scope><scope>OTOTI</scope></search><sort><creationdate>20111001</creationdate><title>The electronic structure of co-sputtered zinc indium tin oxide thin films</title><author>Carreras, Paz ; Gutmann, Sebastian ; Antony, Aldrin ; Bertomeu, Joan ; Schlaf, Rudy</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c389t-cf169663db73beab07aa223bccf6a532d92a4047bbaede23bffbe13a378817a23</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2011</creationdate><topic>DEPOSITION</topic><topic>DOPED MATERIALS</topic><topic>Electrodes</topic><topic>ELECTRONIC STRUCTURE</topic><topic>Elèctrodes</topic><topic>Estany</topic><topic>Estructura electrònica</topic><topic>INDIUM COMPOUNDS</topic><topic>LAYERS</topic><topic>MATERIALS SCIENCE</topic><topic>Metallic oxides</topic><topic>OPACITY</topic><topic>Optical properties</topic><topic>Pel·lícules fines</topic><topic>PHOTOEMISSION</topic><topic>Propietats òptiques</topic><topic>SEMICONDUCTOR MATERIALS</topic><topic>SPUTTERING</topic><topic>SURFACES</topic><topic>THIN FILMS</topic><topic>Tin</topic><topic>TIN OXIDES</topic><topic>ULTRAVIOLET RADIATION</topic><topic>VALENCE</topic><topic>VISIBLE RADIATION</topic><topic>WORK FUNCTIONS</topic><topic>X-RAY PHOTOELECTRON SPECTROSCOPY</topic><topic>ZINC COMPOUNDS</topic><topic>Zinc oxide</topic><topic>Òxid de zinc</topic><topic>Òxids metàl·lics</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Carreras, Paz</creatorcontrib><creatorcontrib>Gutmann, Sebastian</creatorcontrib><creatorcontrib>Antony, Aldrin</creatorcontrib><creatorcontrib>Bertomeu, Joan</creatorcontrib><creatorcontrib>Schlaf, Rudy</creatorcontrib><collection>CrossRef</collection><collection>Recercat</collection><collection>OSTI.GOV</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Carreras, Paz</au><au>Gutmann, Sebastian</au><au>Antony, Aldrin</au><au>Bertomeu, Joan</au><au>Schlaf, Rudy</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>The electronic structure of co-sputtered zinc indium tin oxide thin films</atitle><jtitle>Journal of applied physics</jtitle><date>2011-10-01</date><risdate>2011</risdate><volume>110</volume><issue>7</issue><spage>073711</spage><epage>073711-7</epage><pages>073711-073711-7</pages><issn>0021-8979</issn><eissn>1089-7550</eissn><coden>JAPIAU</coden><abstract>Zinc indium tin oxide (ZITO) transparent conductive oxide layers were deposited via radio frequency (RF) magnetron co-sputtering at room temperature. A series of samples with gradually varying zinc content was investigated. The samples were characterized with x-ray and ultraviolet photoemission spectroscopy (XPS, UPS) to determine the electronic structure of the surface. Valence and conduction bands maxima (VBM, CBM), and work function were determined. The experiments indicate that increasing Zn content results in films with a higher defect rate at the surface leading to the formation of a degenerately doped surface layer if the Zn content surpasses ∼50%. Furthermore, the experiments demonstrate that ZITO is susceptible to ultraviolet light induced work function reduction, similar to what was earlier observed on ITO and TiO
2
films.</abstract><cop>United States</cop><pub>American Institute of Physics</pub><doi>10.1063/1.3647780</doi><tpages>8</tpages><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0021-8979 |
| ispartof | Journal of applied physics, 2011-10, Vol.110 (7), p.073711-073711-7 |
| issn | 0021-8979 1089-7550 |
| language | eng |
| recordid | cdi_osti_scitechconnect_22038731 |
| source | AIP Journals Complete; Recercat; AIP Digital Archive; Alma/SFX Local Collection |
| subjects | DEPOSITION DOPED MATERIALS Electrodes ELECTRONIC STRUCTURE Elèctrodes Estany Estructura electrònica INDIUM COMPOUNDS LAYERS MATERIALS SCIENCE Metallic oxides OPACITY Optical properties Pel·lícules fines PHOTOEMISSION Propietats òptiques SEMICONDUCTOR MATERIALS SPUTTERING SURFACES THIN FILMS Tin TIN OXIDES ULTRAVIOLET RADIATION VALENCE VISIBLE RADIATION WORK FUNCTIONS X-RAY PHOTOELECTRON SPECTROSCOPY ZINC COMPOUNDS Zinc oxide Òxid de zinc Òxids metàl·lics |
| title | The electronic structure of co-sputtered zinc indium tin oxide thin films |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-25T07%3A27%3A56IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-csuc_osti_&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=The%20electronic%20structure%20of%20co-sputtered%20zinc%20indium%20tin%20oxide%20thin%20films&rft.jtitle=Journal%20of%20applied%20physics&rft.au=Carreras,%20Paz&rft.date=2011-10-01&rft.volume=110&rft.issue=7&rft.spage=073711&rft.epage=073711-7&rft.pages=073711-073711-7&rft.issn=0021-8979&rft.eissn=1089-7550&rft.coden=JAPIAU&rft_id=info:doi/10.1063/1.3647780&rft_dat=%3Ccsuc_osti_%3Eoai_recercat_cat_2072_210210%3C/csuc_osti_%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |