Surfactant enhanced solid phase epitaxy of Ge/CaF{sub 2}/Si(111): Synchrotron x-ray characterization of structure and morphology
The structure and morphology of CaF{sub 2}/Si(111) and Ge/CaF{sub 2}/Si(111) layered structures with film thicknesses in the range of very few nanometers has been studied with synchrotron-based radiation. While the CaF{sub 2} film is grown via molecular beam epitaxy, the Ge film is fabricated by sur...
Gespeichert in:
| Veröffentlicht in: | Journal of applied physics 2011-11, Vol.110 (10) |
|---|---|
| Hauptverfasser: | , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | 10 |
| container_start_page | |
| container_title | Journal of applied physics |
| container_volume | 110 |
| creator | Wollschlaeger, J. Deiter, C. Wang, C. R. Mueller, B. H. Hofmann, K. R. |
| description | The structure and morphology of CaF{sub 2}/Si(111) and Ge/CaF{sub 2}/Si(111) layered structures with film thicknesses in the range of very few nanometers has been studied with synchrotron-based radiation. While the CaF{sub 2} film is grown via molecular beam epitaxy, the Ge film is fabricated by surfactant enhanced solid phase epitaxy with Sb as surfactant. The CaF{sub 2} film forms two laterally separated phases of relaxed CaF{sub 2} and pseudomorphic CaF{sub 2}, respectively, although the film thickness is very homogeneous. The Ge film is completely relaxed and forms A-oriented parts as well as B-oriented parts, due to twinning. In spite of the large surface roughness of the Ge film, it completely wets CaF{sub 2}/Si(111) also after annealing at 600 deg. C, due to the application of Sb during the annealing process. |
| doi_str_mv | 10.1063/1.3661174 |
| format | Article |
| fullrecord | <record><control><sourceid>osti</sourceid><recordid>TN_cdi_osti_scitechconnect_22036766</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>22036766</sourcerecordid><originalsourceid>FETCH-osti_scitechconnect_220367663</originalsourceid><addsrcrecordid>eNqNjM1KxDAURoMoWH8WvsEFN7roNLdx0tbt4Oi-sx_upKmJ1KQkKUwVwUe3i3kAVx8czvkYu0O-Qi5FgSshJWL1dMYy5HWTV-s1P2cZ5yXmdVM1l-wqxg_OEWvRZOy3nUJPKpFLoJ0hp3QH0Q-2g9FQ1KBHm-g4g-_hVRcb2n7H6QDlT9HaB0R8fIZ2dsoEn4J3cMwDzaAMheVTB_tFyS54iWMKk0pT0ECug08fRuMH_z7fsIuehqhvT3vN7rcvu81b7mOy-6hs0soo75xWaV-WXMhKSvE_6w-PN1VS</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Surfactant enhanced solid phase epitaxy of Ge/CaF{sub 2}/Si(111): Synchrotron x-ray characterization of structure and morphology</title><source>AIP Journals Complete</source><source>AIP Digital Archive</source><source>Alma/SFX Local Collection</source><creator>Wollschlaeger, J. ; Deiter, C. ; Wang, C. R. ; Mueller, B. H. ; Hofmann, K. R.</creator><creatorcontrib>Wollschlaeger, J. ; Deiter, C. ; Wang, C. R. ; Mueller, B. H. ; Hofmann, K. R.</creatorcontrib><description>The structure and morphology of CaF{sub 2}/Si(111) and Ge/CaF{sub 2}/Si(111) layered structures with film thicknesses in the range of very few nanometers has been studied with synchrotron-based radiation. While the CaF{sub 2} film is grown via molecular beam epitaxy, the Ge film is fabricated by surfactant enhanced solid phase epitaxy with Sb as surfactant. The CaF{sub 2} film forms two laterally separated phases of relaxed CaF{sub 2} and pseudomorphic CaF{sub 2}, respectively, although the film thickness is very homogeneous. The Ge film is completely relaxed and forms A-oriented parts as well as B-oriented parts, due to twinning. In spite of the large surface roughness of the Ge film, it completely wets CaF{sub 2}/Si(111) also after annealing at 600 deg. C, due to the application of Sb during the annealing process.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.3661174</identifier><language>eng</language><publisher>United States</publisher><subject>ANNEALING ; ANTIMONY ; CALCIUM ; CALCIUM FLUORIDES ; CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ; CRYSTAL STRUCTURE ; GERMANIUM ; INTERFACES ; MATERIALS SCIENCE ; MOLECULAR BEAM EPITAXY ; MOLECULAR STRUCTURE ; MORPHOLOGY ; REFLECTION ; ROUGHNESS ; SEMICONDUCTOR MATERIALS ; SILICON ; SOLIDS ; SURFACES ; SYNCHROTRON RADIATION ; THIN FILMS ; TWINNING ; X-RAY DIFFRACTION</subject><ispartof>Journal of applied physics, 2011-11, Vol.110 (10)</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,314,776,780,881,27901,27902</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/22036766$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Wollschlaeger, J.</creatorcontrib><creatorcontrib>Deiter, C.</creatorcontrib><creatorcontrib>Wang, C. R.</creatorcontrib><creatorcontrib>Mueller, B. H.</creatorcontrib><creatorcontrib>Hofmann, K. R.</creatorcontrib><title>Surfactant enhanced solid phase epitaxy of Ge/CaF{sub 2}/Si(111): Synchrotron x-ray characterization of structure and morphology</title><title>Journal of applied physics</title><description>The structure and morphology of CaF{sub 2}/Si(111) and Ge/CaF{sub 2}/Si(111) layered structures with film thicknesses in the range of very few nanometers has been studied with synchrotron-based radiation. While the CaF{sub 2} film is grown via molecular beam epitaxy, the Ge film is fabricated by surfactant enhanced solid phase epitaxy with Sb as surfactant. The CaF{sub 2} film forms two laterally separated phases of relaxed CaF{sub 2} and pseudomorphic CaF{sub 2}, respectively, although the film thickness is very homogeneous. The Ge film is completely relaxed and forms A-oriented parts as well as B-oriented parts, due to twinning. In spite of the large surface roughness of the Ge film, it completely wets CaF{sub 2}/Si(111) also after annealing at 600 deg. C, due to the application of Sb during the annealing process.</description><subject>ANNEALING</subject><subject>ANTIMONY</subject><subject>CALCIUM</subject><subject>CALCIUM FLUORIDES</subject><subject>CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY</subject><subject>CRYSTAL STRUCTURE</subject><subject>GERMANIUM</subject><subject>INTERFACES</subject><subject>MATERIALS SCIENCE</subject><subject>MOLECULAR BEAM EPITAXY</subject><subject>MOLECULAR STRUCTURE</subject><subject>MORPHOLOGY</subject><subject>REFLECTION</subject><subject>ROUGHNESS</subject><subject>SEMICONDUCTOR MATERIALS</subject><subject>SILICON</subject><subject>SOLIDS</subject><subject>SURFACES</subject><subject>SYNCHROTRON RADIATION</subject><subject>THIN FILMS</subject><subject>TWINNING</subject><subject>X-RAY DIFFRACTION</subject><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2011</creationdate><recordtype>article</recordtype><recordid>eNqNjM1KxDAURoMoWH8WvsEFN7roNLdx0tbt4Oi-sx_upKmJ1KQkKUwVwUe3i3kAVx8czvkYu0O-Qi5FgSshJWL1dMYy5HWTV-s1P2cZ5yXmdVM1l-wqxg_OEWvRZOy3nUJPKpFLoJ0hp3QH0Q-2g9FQ1KBHm-g4g-_hVRcb2n7H6QDlT9HaB0R8fIZ2dsoEn4J3cMwDzaAMheVTB_tFyS54iWMKk0pT0ECug08fRuMH_z7fsIuehqhvT3vN7rcvu81b7mOy-6hs0soo75xWaV-WXMhKSvE_6w-PN1VS</recordid><startdate>20111115</startdate><enddate>20111115</enddate><creator>Wollschlaeger, J.</creator><creator>Deiter, C.</creator><creator>Wang, C. R.</creator><creator>Mueller, B. H.</creator><creator>Hofmann, K. R.</creator><scope>OTOTI</scope></search><sort><creationdate>20111115</creationdate><title>Surfactant enhanced solid phase epitaxy of Ge/CaF{sub 2}/Si(111): Synchrotron x-ray characterization of structure and morphology</title><author>Wollschlaeger, J. ; Deiter, C. ; Wang, C. R. ; Mueller, B. H. ; Hofmann, K. R.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-osti_scitechconnect_220367663</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2011</creationdate><topic>ANNEALING</topic><topic>ANTIMONY</topic><topic>CALCIUM</topic><topic>CALCIUM FLUORIDES</topic><topic>CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY</topic><topic>CRYSTAL STRUCTURE</topic><topic>GERMANIUM</topic><topic>INTERFACES</topic><topic>MATERIALS SCIENCE</topic><topic>MOLECULAR BEAM EPITAXY</topic><topic>MOLECULAR STRUCTURE</topic><topic>MORPHOLOGY</topic><topic>REFLECTION</topic><topic>ROUGHNESS</topic><topic>SEMICONDUCTOR MATERIALS</topic><topic>SILICON</topic><topic>SOLIDS</topic><topic>SURFACES</topic><topic>SYNCHROTRON RADIATION</topic><topic>THIN FILMS</topic><topic>TWINNING</topic><topic>X-RAY DIFFRACTION</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Wollschlaeger, J.</creatorcontrib><creatorcontrib>Deiter, C.</creatorcontrib><creatorcontrib>Wang, C. R.</creatorcontrib><creatorcontrib>Mueller, B. H.</creatorcontrib><creatorcontrib>Hofmann, K. R.</creatorcontrib><collection>OSTI.GOV</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Wollschlaeger, J.</au><au>Deiter, C.</au><au>Wang, C. R.</au><au>Mueller, B. H.</au><au>Hofmann, K. R.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Surfactant enhanced solid phase epitaxy of Ge/CaF{sub 2}/Si(111): Synchrotron x-ray characterization of structure and morphology</atitle><jtitle>Journal of applied physics</jtitle><date>2011-11-15</date><risdate>2011</risdate><volume>110</volume><issue>10</issue><issn>0021-8979</issn><eissn>1089-7550</eissn><abstract>The structure and morphology of CaF{sub 2}/Si(111) and Ge/CaF{sub 2}/Si(111) layered structures with film thicknesses in the range of very few nanometers has been studied with synchrotron-based radiation. While the CaF{sub 2} film is grown via molecular beam epitaxy, the Ge film is fabricated by surfactant enhanced solid phase epitaxy with Sb as surfactant. The CaF{sub 2} film forms two laterally separated phases of relaxed CaF{sub 2} and pseudomorphic CaF{sub 2}, respectively, although the film thickness is very homogeneous. The Ge film is completely relaxed and forms A-oriented parts as well as B-oriented parts, due to twinning. In spite of the large surface roughness of the Ge film, it completely wets CaF{sub 2}/Si(111) also after annealing at 600 deg. C, due to the application of Sb during the annealing process.</abstract><cop>United States</cop><doi>10.1063/1.3661174</doi></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0021-8979 |
| ispartof | Journal of applied physics, 2011-11, Vol.110 (10) |
| issn | 0021-8979 1089-7550 |
| language | eng |
| recordid | cdi_osti_scitechconnect_22036766 |
| source | AIP Journals Complete; AIP Digital Archive; Alma/SFX Local Collection |
| subjects | ANNEALING ANTIMONY CALCIUM CALCIUM FLUORIDES CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY CRYSTAL STRUCTURE GERMANIUM INTERFACES MATERIALS SCIENCE MOLECULAR BEAM EPITAXY MOLECULAR STRUCTURE MORPHOLOGY REFLECTION ROUGHNESS SEMICONDUCTOR MATERIALS SILICON SOLIDS SURFACES SYNCHROTRON RADIATION THIN FILMS TWINNING X-RAY DIFFRACTION |
| title | Surfactant enhanced solid phase epitaxy of Ge/CaF{sub 2}/Si(111): Synchrotron x-ray characterization of structure and morphology |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-16T07%3A24%3A53IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-osti&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Surfactant%20enhanced%20solid%20phase%20epitaxy%20of%20Ge/CaF%7Bsub%202%7D/Si(111):%20Synchrotron%20x-ray%20characterization%20of%20structure%20and%20morphology&rft.jtitle=Journal%20of%20applied%20physics&rft.au=Wollschlaeger,%20J.&rft.date=2011-11-15&rft.volume=110&rft.issue=10&rft.issn=0021-8979&rft.eissn=1089-7550&rft_id=info:doi/10.1063/1.3661174&rft_dat=%3Costi%3E22036766%3C/osti%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |