Ferromagnets based on diamond-like semiconductors GaSb, InSb, Ge, and Si supersaturated with manganese or iron impurities during laser-plasma deposition
Properties of thin (30–100 nm) layers of diluted magnetic semiconductors based on diamond-like compounds III–V (InSb and GaSb) and elemental semiconductors Ge and Si doped with 3 d impurities of manganese and iron up to 15% were measured and discussed. The layers were grown by laser-plasma depositio...
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| Veröffentlicht in: | Journal of experimental and theoretical physics 2008-01, Vol.106 (1), p.110-116 |
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| creator | Demidov, E. S. Podol’skii, V. V. Lesnikov, V. P. Sapozhnikov, M. V. Druzhnov, D. M. Gusev, S. N. Gribkov, B. A. Filatov, D. O. Stepanova, Yu. S. Levchuk, S. A. |
| description | Properties of thin (30–100 nm) layers of diluted magnetic semiconductors based on diamond-like compounds III–V (InSb and GaSb) and elemental semiconductors Ge and Si doped with 3
d
impurities of manganese and iron up to 15% were measured and discussed. The layers were grown by laser-plasma deposition onto heated single-crystal gallium arsenide or sapphire substrates. The ferromagnetism of layers with the Curie temperature up to 500 K appeared in observations of the ferromagnetic resonance, anomalous Hall effect, and magneto-optic Kerr effect. The carrier mobility of diluted magnetic semiconductors is a hundred times larger than that of the previously known highest temperature magnetic semiconductors, i.e., copper and chromium chalcogenides. The difference between changes in the magnetization with temperature in diluted semiconductors based on III–V, Ge, and Si was discussed. A complex structure of the ferromagnetic resonance spectrum in Si:Mn/GaAs was observed. The results of magnetic-force microscopy showed a weak correlation between the surface relief and magnetic inhomogeneity, which suggests that the ferromagnetism is caused by the 3
d
-impurity solid solution, rather than ferromagnetic phase inclusions. |
| doi_str_mv | 10.1134/S1063776108010081 |
| format | Article |
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d
impurities of manganese and iron up to 15% were measured and discussed. The layers were grown by laser-plasma deposition onto heated single-crystal gallium arsenide or sapphire substrates. The ferromagnetism of layers with the Curie temperature up to 500 K appeared in observations of the ferromagnetic resonance, anomalous Hall effect, and magneto-optic Kerr effect. The carrier mobility of diluted magnetic semiconductors is a hundred times larger than that of the previously known highest temperature magnetic semiconductors, i.e., copper and chromium chalcogenides. The difference between changes in the magnetization with temperature in diluted semiconductors based on III–V, Ge, and Si was discussed. A complex structure of the ferromagnetic resonance spectrum in Si:Mn/GaAs was observed. The results of magnetic-force microscopy showed a weak correlation between the surface relief and magnetic inhomogeneity, which suggests that the ferromagnetism is caused by the 3
d
-impurity solid solution, rather than ferromagnetic phase inclusions.</description><identifier>ISSN: 1063-7761</identifier><identifier>EISSN: 1090-6509</identifier><identifier>DOI: 10.1134/S1063776108010081</identifier><language>eng</language><publisher>Dordrecht: SP MAIK Nauka/Interperiodica</publisher><subject>ATOMIC FORCE MICROSCOPY ; CARRIER MOBILITY ; CHROMIUM ; Classical and Quantum Gravitation ; CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ; COPPER ; CURIE POINT ; Disorder ; DOPED MATERIALS ; Elementary Particles ; FERROMAGNETIC RESONANCE ; FERROMAGNETISM ; GALLIUM ANTIMONIDES ; GALLIUM ARSENIDES ; HALL EFFECT ; INDIUM ANTIMONIDES ; IRON ; KERR EFFECT ; MAGNETIC FIELDS ; MAGNETIC SEMICONDUCTORS ; MAGNETIZATION ; MANGANESE ; MATERIALS SCIENCE ; MONOCRYSTALS ; Order ; Particle and Nuclear Physics ; Phase Transition in Condensed Systems ; Physics ; Physics and Astronomy ; Quantum Field Theory ; Relativity Theory ; Solid State Physics ; TEMPERATURE DEPENDENCE</subject><ispartof>Journal of experimental and theoretical physics, 2008-01, Vol.106 (1), p.110-116</ispartof><rights>Pleiades Publishing, Ltd. 2008</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c316t-4bf7b07aa54f8b7f8bfa0e2c49904213086ee15721fba5889ab672f0880001ff3</citedby><cites>FETCH-LOGICAL-c316t-4bf7b07aa54f8b7f8bfa0e2c49904213086ee15721fba5889ab672f0880001ff3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1134/S1063776108010081$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1134/S1063776108010081$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>230,314,780,784,885,27915,27916,41479,42548,51310</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/22028251$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Demidov, E. S.</creatorcontrib><creatorcontrib>Podol’skii, V. V.</creatorcontrib><creatorcontrib>Lesnikov, V. P.</creatorcontrib><creatorcontrib>Sapozhnikov, M. V.</creatorcontrib><creatorcontrib>Druzhnov, D. M.</creatorcontrib><creatorcontrib>Gusev, S. N.</creatorcontrib><creatorcontrib>Gribkov, B. A.</creatorcontrib><creatorcontrib>Filatov, D. O.</creatorcontrib><creatorcontrib>Stepanova, Yu. S.</creatorcontrib><creatorcontrib>Levchuk, S. A.</creatorcontrib><title>Ferromagnets based on diamond-like semiconductors GaSb, InSb, Ge, and Si supersaturated with manganese or iron impurities during laser-plasma deposition</title><title>Journal of experimental and theoretical physics</title><addtitle>J. Exp. Theor. Phys</addtitle><description>Properties of thin (30–100 nm) layers of diluted magnetic semiconductors based on diamond-like compounds III–V (InSb and GaSb) and elemental semiconductors Ge and Si doped with 3
d
impurities of manganese and iron up to 15% were measured and discussed. The layers were grown by laser-plasma deposition onto heated single-crystal gallium arsenide or sapphire substrates. The ferromagnetism of layers with the Curie temperature up to 500 K appeared in observations of the ferromagnetic resonance, anomalous Hall effect, and magneto-optic Kerr effect. The carrier mobility of diluted magnetic semiconductors is a hundred times larger than that of the previously known highest temperature magnetic semiconductors, i.e., copper and chromium chalcogenides. The difference between changes in the magnetization with temperature in diluted semiconductors based on III–V, Ge, and Si was discussed. A complex structure of the ferromagnetic resonance spectrum in Si:Mn/GaAs was observed. The results of magnetic-force microscopy showed a weak correlation between the surface relief and magnetic inhomogeneity, which suggests that the ferromagnetism is caused by the 3
d
-impurity solid solution, rather than ferromagnetic phase inclusions.</description><subject>ATOMIC FORCE MICROSCOPY</subject><subject>CARRIER MOBILITY</subject><subject>CHROMIUM</subject><subject>Classical and Quantum Gravitation</subject><subject>CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY</subject><subject>COPPER</subject><subject>CURIE POINT</subject><subject>Disorder</subject><subject>DOPED MATERIALS</subject><subject>Elementary Particles</subject><subject>FERROMAGNETIC RESONANCE</subject><subject>FERROMAGNETISM</subject><subject>GALLIUM ANTIMONIDES</subject><subject>GALLIUM ARSENIDES</subject><subject>HALL EFFECT</subject><subject>INDIUM ANTIMONIDES</subject><subject>IRON</subject><subject>KERR EFFECT</subject><subject>MAGNETIC FIELDS</subject><subject>MAGNETIC SEMICONDUCTORS</subject><subject>MAGNETIZATION</subject><subject>MANGANESE</subject><subject>MATERIALS SCIENCE</subject><subject>MONOCRYSTALS</subject><subject>Order</subject><subject>Particle and Nuclear Physics</subject><subject>Phase Transition in Condensed Systems</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><subject>Quantum Field Theory</subject><subject>Relativity Theory</subject><subject>Solid State Physics</subject><subject>TEMPERATURE DEPENDENCE</subject><issn>1063-7761</issn><issn>1090-6509</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2008</creationdate><recordtype>article</recordtype><recordid>eNp9UctO5TAMrRAj8Zj5gNlFYksHJ32lS4TgDhISiwvrym2dS-A2qeJUiD_hc0l12Y00C8eOfM6xjp1lvyX8kbIor7YS6qJpagkaJICWR9mphBbyuoL2eK3rIl_7J9kZ8yskiIL2NPu8oxD8hDtHkUWPTKPwTowWJ-_GfG_fSDBNdki_ZYg-sNjgtr8U9259N3Qp0I1iawUvMwXGuASMSeTdxhcxoduhIybhg7AhCdtpXoKNlliMqXA7sU8zQz6nNKEYafac2t79zH4Y3DP9-s7n2fPd7dPN3_zhcXN_c_2QD4WsY172pumhQaxKo_smhUEgNZRtC6WSBeiaSFaNkqbHSusW-7pRBrROK5DGFOfZxUHXc7QdDzbS8JLcOhpipxQorSqZUPKAGoJnDmS6OdgJw0cnoVsP0P1zgMRRBw7Pq1EK3atfgktm_kP6AsdxiZc</recordid><startdate>20080101</startdate><enddate>20080101</enddate><creator>Demidov, E. S.</creator><creator>Podol’skii, V. V.</creator><creator>Lesnikov, V. P.</creator><creator>Sapozhnikov, M. V.</creator><creator>Druzhnov, D. M.</creator><creator>Gusev, S. N.</creator><creator>Gribkov, B. A.</creator><creator>Filatov, D. O.</creator><creator>Stepanova, Yu. S.</creator><creator>Levchuk, S. A.</creator><general>SP MAIK Nauka/Interperiodica</general><scope>AAYXX</scope><scope>CITATION</scope><scope>OTOTI</scope></search><sort><creationdate>20080101</creationdate><title>Ferromagnets based on diamond-like semiconductors GaSb, InSb, Ge, and Si supersaturated with manganese or iron impurities during laser-plasma deposition</title><author>Demidov, E. S. ; Podol’skii, V. V. ; Lesnikov, V. P. ; Sapozhnikov, M. V. ; Druzhnov, D. M. ; Gusev, S. N. ; Gribkov, B. A. ; Filatov, D. O. ; Stepanova, Yu. S. ; Levchuk, S. 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A.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Ferromagnets based on diamond-like semiconductors GaSb, InSb, Ge, and Si supersaturated with manganese or iron impurities during laser-plasma deposition</atitle><jtitle>Journal of experimental and theoretical physics</jtitle><stitle>J. Exp. Theor. Phys</stitle><date>2008-01-01</date><risdate>2008</risdate><volume>106</volume><issue>1</issue><spage>110</spage><epage>116</epage><pages>110-116</pages><issn>1063-7761</issn><eissn>1090-6509</eissn><abstract>Properties of thin (30–100 nm) layers of diluted magnetic semiconductors based on diamond-like compounds III–V (InSb and GaSb) and elemental semiconductors Ge and Si doped with 3
d
impurities of manganese and iron up to 15% were measured and discussed. The layers were grown by laser-plasma deposition onto heated single-crystal gallium arsenide or sapphire substrates. The ferromagnetism of layers with the Curie temperature up to 500 K appeared in observations of the ferromagnetic resonance, anomalous Hall effect, and magneto-optic Kerr effect. The carrier mobility of diluted magnetic semiconductors is a hundred times larger than that of the previously known highest temperature magnetic semiconductors, i.e., copper and chromium chalcogenides. The difference between changes in the magnetization with temperature in diluted semiconductors based on III–V, Ge, and Si was discussed. A complex structure of the ferromagnetic resonance spectrum in Si:Mn/GaAs was observed. The results of magnetic-force microscopy showed a weak correlation between the surface relief and magnetic inhomogeneity, which suggests that the ferromagnetism is caused by the 3
d
-impurity solid solution, rather than ferromagnetic phase inclusions.</abstract><cop>Dordrecht</cop><pub>SP MAIK Nauka/Interperiodica</pub><doi>10.1134/S1063776108010081</doi><tpages>7</tpages></addata></record> |
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| subjects | ATOMIC FORCE MICROSCOPY CARRIER MOBILITY CHROMIUM Classical and Quantum Gravitation CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY COPPER CURIE POINT Disorder DOPED MATERIALS Elementary Particles FERROMAGNETIC RESONANCE FERROMAGNETISM GALLIUM ANTIMONIDES GALLIUM ARSENIDES HALL EFFECT INDIUM ANTIMONIDES IRON KERR EFFECT MAGNETIC FIELDS MAGNETIC SEMICONDUCTORS MAGNETIZATION MANGANESE MATERIALS SCIENCE MONOCRYSTALS Order Particle and Nuclear Physics Phase Transition in Condensed Systems Physics Physics and Astronomy Quantum Field Theory Relativity Theory Solid State Physics TEMPERATURE DEPENDENCE |
| title | Ferromagnets based on diamond-like semiconductors GaSb, InSb, Ge, and Si supersaturated with manganese or iron impurities during laser-plasma deposition |
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