Evaluation of the interface of thin GaN layers on c - and m -plane ZnO substrates by Rutherford backscattering
Lattice distortion at the interfaces between thin GaN layers with ∼400 nm in thickness and ZnO substrates with non-polar m -plane (10-10) and polar c -plane (0001) is studied using Rutherford backscattering/ion channeling techniques. The interface between GaN/ m -plane ZnO is aligned clearly to m -a...
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| Veröffentlicht in: | Applied physics letters 2011-07, Vol.99 (2), p.021909-021909-3 |
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| container_end_page | 021909-3 |
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| container_issue | 2 |
| container_start_page | 021909 |
| container_title | Applied physics letters |
| container_volume | 99 |
| creator | Izawa, Y. Oga, T. Ida, T. Kuriyama, K. Hashimoto, A. Kotake, H. Kamijoh, T. |
| description | Lattice distortion at the interfaces between thin GaN layers with ∼400 nm in thickness and ZnO substrates with non-polar
m
-plane (10-10) and polar
c
-plane (0001) is studied using Rutherford backscattering/ion channeling techniques. The interface between GaN/
m
-plane ZnO is aligned clearly to
m
-axis, indicating no lattice distortion, while between GaN/
c
-plane ZnO causes the lattice distortion in the GaN layer due to the piezoelectric field. The range of distortion exceeds ∼90 nm from the interface of GaN/
c
-plane ZnO. These results are confirmed by x-ray diffraction and reflection high energy electron diffraction studies. |
| doi_str_mv | 10.1063/1.3610958 |
| format | Article |
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m
-plane (10-10) and polar
c
-plane (0001) is studied using Rutherford backscattering/ion channeling techniques. The interface between GaN/
m
-plane ZnO is aligned clearly to
m
-axis, indicating no lattice distortion, while between GaN/
c
-plane ZnO causes the lattice distortion in the GaN layer due to the piezoelectric field. The range of distortion exceeds ∼90 nm from the interface of GaN/
c
-plane ZnO. These results are confirmed by x-ray diffraction and reflection high energy electron diffraction studies.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.3610958</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>United States: American Institute of Physics</publisher><subject>CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ; CRYSTAL STRUCTURE ; ELECTRON DIFFRACTION ; EPITAXY ; GALLIUM NITRIDES ; INTERFACES ; ION CHANNELING ; LAYERS ; MATERIALS SCIENCE ; PIEZOELECTRICITY ; REFLECTION ; RUTHERFORD BACKSCATTERING SPECTROSCOPY ; SEMICONDUCTOR MATERIALS ; SUBSTRATES ; X-RAY DIFFRACTION ; ZINC OXIDES</subject><ispartof>Applied physics letters, 2011-07, Vol.99 (2), p.021909-021909-3</ispartof><rights>2011 American Institute of Physics</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c312t-bb67f1dde3734262280c417c3e8f05965005e756341588766e396dbe3cfd65e83</citedby><cites>FETCH-LOGICAL-c312t-bb67f1dde3734262280c417c3e8f05965005e756341588766e396dbe3cfd65e83</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/apl/article-lookup/doi/10.1063/1.3610958$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>230,314,780,784,794,885,1559,4512,27924,27925,76384,76390</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/22027674$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Izawa, Y.</creatorcontrib><creatorcontrib>Oga, T.</creatorcontrib><creatorcontrib>Ida, T.</creatorcontrib><creatorcontrib>Kuriyama, K.</creatorcontrib><creatorcontrib>Hashimoto, A.</creatorcontrib><creatorcontrib>Kotake, H.</creatorcontrib><creatorcontrib>Kamijoh, T.</creatorcontrib><title>Evaluation of the interface of thin GaN layers on c - and m -plane ZnO substrates by Rutherford backscattering</title><title>Applied physics letters</title><description>Lattice distortion at the interfaces between thin GaN layers with ∼400 nm in thickness and ZnO substrates with non-polar
m
-plane (10-10) and polar
c
-plane (0001) is studied using Rutherford backscattering/ion channeling techniques. The interface between GaN/
m
-plane ZnO is aligned clearly to
m
-axis, indicating no lattice distortion, while between GaN/
c
-plane ZnO causes the lattice distortion in the GaN layer due to the piezoelectric field. The range of distortion exceeds ∼90 nm from the interface of GaN/
c
-plane ZnO. These results are confirmed by x-ray diffraction and reflection high energy electron diffraction studies.</description><subject>CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY</subject><subject>CRYSTAL STRUCTURE</subject><subject>ELECTRON DIFFRACTION</subject><subject>EPITAXY</subject><subject>GALLIUM NITRIDES</subject><subject>INTERFACES</subject><subject>ION CHANNELING</subject><subject>LAYERS</subject><subject>MATERIALS SCIENCE</subject><subject>PIEZOELECTRICITY</subject><subject>REFLECTION</subject><subject>RUTHERFORD BACKSCATTERING SPECTROSCOPY</subject><subject>SEMICONDUCTOR MATERIALS</subject><subject>SUBSTRATES</subject><subject>X-RAY DIFFRACTION</subject><subject>ZINC OXIDES</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2011</creationdate><recordtype>article</recordtype><recordid>eNp1kE1LAzEQQIMoWKsH_0HAk4et-dgkuxdBilahWBC9eAnZ7MSubrMlSYX-e1Nb8ORpmOHxGB5Cl5RMKJH8hk64pKQW1REaUaJUwSmtjtGIEMILWQt6is5i_MyrYJyPkL__Nv3GpG7weHA4LQF3PkFwxsL-0Hk8M8-4N1sIEWfM4gIb3-IVLta98YDf_QLHTRNTMAkibrb4ZZNFwQ2hxY2xX9GalJ2d_zhHJ870ES4Oc4zeHu5fp4_FfDF7mt7NC8spS0XTSOVo2wJXvGSSsYrYkirLoXJE1FLk90EJyUsqqkpJCbyWbQPculYKqPgYXe29Q0ydjrZLYJd28B5s0owRpqQqM3W9p2wYYgzg9Dp0KxO2mhK9y6mpPuTM7O2e3cl-e_0P_zXVg9M5he48_wHyeXtc</recordid><startdate>20110711</startdate><enddate>20110711</enddate><creator>Izawa, Y.</creator><creator>Oga, T.</creator><creator>Ida, T.</creator><creator>Kuriyama, K.</creator><creator>Hashimoto, A.</creator><creator>Kotake, H.</creator><creator>Kamijoh, T.</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>OTOTI</scope></search><sort><creationdate>20110711</creationdate><title>Evaluation of the interface of thin GaN layers on c - and m -plane ZnO substrates by Rutherford backscattering</title><author>Izawa, Y. ; Oga, T. ; Ida, T. ; Kuriyama, K. ; Hashimoto, A. ; Kotake, H. ; Kamijoh, T.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c312t-bb67f1dde3734262280c417c3e8f05965005e756341588766e396dbe3cfd65e83</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2011</creationdate><topic>CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY</topic><topic>CRYSTAL STRUCTURE</topic><topic>ELECTRON DIFFRACTION</topic><topic>EPITAXY</topic><topic>GALLIUM NITRIDES</topic><topic>INTERFACES</topic><topic>ION CHANNELING</topic><topic>LAYERS</topic><topic>MATERIALS SCIENCE</topic><topic>PIEZOELECTRICITY</topic><topic>REFLECTION</topic><topic>RUTHERFORD BACKSCATTERING SPECTROSCOPY</topic><topic>SEMICONDUCTOR MATERIALS</topic><topic>SUBSTRATES</topic><topic>X-RAY DIFFRACTION</topic><topic>ZINC OXIDES</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Izawa, Y.</creatorcontrib><creatorcontrib>Oga, T.</creatorcontrib><creatorcontrib>Ida, T.</creatorcontrib><creatorcontrib>Kuriyama, K.</creatorcontrib><creatorcontrib>Hashimoto, A.</creatorcontrib><creatorcontrib>Kotake, H.</creatorcontrib><creatorcontrib>Kamijoh, T.</creatorcontrib><collection>CrossRef</collection><collection>OSTI.GOV</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Izawa, Y.</au><au>Oga, T.</au><au>Ida, T.</au><au>Kuriyama, K.</au><au>Hashimoto, A.</au><au>Kotake, H.</au><au>Kamijoh, T.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Evaluation of the interface of thin GaN layers on c - and m -plane ZnO substrates by Rutherford backscattering</atitle><jtitle>Applied physics letters</jtitle><date>2011-07-11</date><risdate>2011</risdate><volume>99</volume><issue>2</issue><spage>021909</spage><epage>021909-3</epage><pages>021909-021909-3</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>Lattice distortion at the interfaces between thin GaN layers with ∼400 nm in thickness and ZnO substrates with non-polar
m
-plane (10-10) and polar
c
-plane (0001) is studied using Rutherford backscattering/ion channeling techniques. The interface between GaN/
m
-plane ZnO is aligned clearly to
m
-axis, indicating no lattice distortion, while between GaN/
c
-plane ZnO causes the lattice distortion in the GaN layer due to the piezoelectric field. The range of distortion exceeds ∼90 nm from the interface of GaN/
c
-plane ZnO. These results are confirmed by x-ray diffraction and reflection high energy electron diffraction studies.</abstract><cop>United States</cop><pub>American Institute of Physics</pub><doi>10.1063/1.3610958</doi></addata></record> |
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| ispartof | Applied physics letters, 2011-07, Vol.99 (2), p.021909-021909-3 |
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| language | eng |
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| source | AIP Journals Complete; AIP Digital Archive; Alma/SFX Local Collection |
| subjects | CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY CRYSTAL STRUCTURE ELECTRON DIFFRACTION EPITAXY GALLIUM NITRIDES INTERFACES ION CHANNELING LAYERS MATERIALS SCIENCE PIEZOELECTRICITY REFLECTION RUTHERFORD BACKSCATTERING SPECTROSCOPY SEMICONDUCTOR MATERIALS SUBSTRATES X-RAY DIFFRACTION ZINC OXIDES |
| title | Evaluation of the interface of thin GaN layers on c - and m -plane ZnO substrates by Rutherford backscattering |
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