the effect of the periphery of metal-semiconductor Schottky-barrier contacts on their electrical characteristics

During the formation of the metal-semiconductor contact with a Schottky barrier (as a gold film on the p - or n -type gallium arsenide surface), an electric field E l built into the electric contact is induced, which propagates around the contact to the distance l (halo) tens of times larger than sp...

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Veröffentlicht in:Semiconductors (Woodbury, N.Y.) N.Y.), 2011-01, Vol.45 (1), p.69-84
Hauptverfasser: Torkhov, N. A., Novikov, V. A.
Format: Artikel
Sprache:eng
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