Energy distribution of recoil atoms and formation of radiation defects in silicon carbide films under proton irradiation

Proton scattering in a silicon carbide film has been numerically simulated. Distribution histograms of the energy imparted to recoil atoms are obtained. Two energy ranges are considered when analyzing the histograms. In the first range of “low” energies, individual Frenkel pairs with closely spaced...

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Veröffentlicht in:	Semiconductors (Woodbury, N.Y.) N.Y.), 2011-02, Vol.45 (2), p.141-144
Hauptverfasser:	Ivanov, A. M., Kozlovski, V. V., Strokan, N. B., Lebedev, A. A.
Format:	Artikel
Sprache:	eng
Schlagworte:	DEFECTS Diffusion ENERGY RANGE ENERGY SPECTRA IRRADIATION Magnetic Materials Magnetism MATERIALS SCIENCE Nonelectronic Properties of Semiconductors (Atomic Structure Nuclear radiation Physics Physics and Astronomy PROTONS RECOILS SCATTERING Silicon Silicon carbide SILICON CARBIDES SIMULATION
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