Energy distribution of recoil atoms and formation of radiation defects in silicon carbide films under proton irradiation
Proton scattering in a silicon carbide film has been numerically simulated. Distribution histograms of the energy imparted to recoil atoms are obtained. Two energy ranges are considered when analyzing the histograms. In the first range of “low” energies, individual Frenkel pairs with closely spaced...
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| Veröffentlicht in: | Semiconductors (Woodbury, N.Y.) N.Y.), 2011-02, Vol.45 (2), p.141-144 |
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| container_title | Semiconductors (Woodbury, N.Y.) |
| container_volume | 45 |
| creator | Ivanov, A. M. Kozlovski, V. V. Strokan, N. B. Lebedev, A. A. |
| description | Proton scattering in a silicon carbide film has been numerically simulated. Distribution histograms of the energy imparted to recoil atoms are obtained. Two energy ranges are considered when analyzing the histograms. In the first range of “low” energies, individual Frenkel pairs with closely spaced components are created. In the second range, recoil atoms have energies sufficient for generating a cascade of displacements. This gives rise to microscopic regions with high density of vacancies and vacancy complexes of various kinds. |
| doi_str_mv | 10.1134/S1063782611020096 |
| format | Article |
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Distribution histograms of the energy imparted to recoil atoms are obtained. Two energy ranges are considered when analyzing the histograms. In the first range of “low” energies, individual Frenkel pairs with closely spaced components are created. In the second range, recoil atoms have energies sufficient for generating a cascade of displacements. This gives rise to microscopic regions with high density of vacancies and vacancy complexes of various kinds.</abstract><cop>Dordrecht</cop><pub>SP MAIK Nauka/Interperiodica</pub><doi>10.1134/S1063782611020096</doi><tpages>4</tpages></addata></record> |
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| ispartof | Semiconductors (Woodbury, N.Y.), 2011-02, Vol.45 (2), p.141-144 |
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| subjects | DEFECTS Diffusion ENERGY RANGE ENERGY SPECTRA IRRADIATION Magnetic Materials Magnetism MATERIALS SCIENCE Nonelectronic Properties of Semiconductors (Atomic Structure Nuclear radiation Physics Physics and Astronomy PROTONS RECOILS SCATTERING Silicon Silicon carbide SILICON CARBIDES SIMULATION |
| title | Energy distribution of recoil atoms and formation of radiation defects in silicon carbide films under proton irradiation |
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