Electrochemical capacitance-voltage profiling of the free-carrier concentration in HEMT heterostructures based on InGaAs/AlGaAs/GaAs compounds

Electrochemical capacitance-voltage profiling of the free-carrier concentration in HEMT heterostructures based on InGaAs/AlGaAs/GaAs compounds

The depth distribution of free carriers over the HEMT structures with quantum-well layers is studied by electrochemical capacitance-voltage profiling. It is shown that the actual distribution of the concentration of free carriers and their energy spectrum in the HEMT structure channel can be obtaine...

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Veröffentlicht in:Semiconductors (Woodbury, N.Y.) N.Y.), 2011-06, Vol.45 (6), p.811-817
Hauptverfasser: Brunkov, P. N., Gutkin, A. A., Rudinsky, M. E., Ronghin, O. I., Sitnikova, A. A., Shakhmin, A. A., Ber, B. Ya, Kazantsev, D. Yu, Egorov, A. Yu, Zemlyakov, V. E., Konnikov, S. G.
Format: Artikel
Sprache:eng
Schlagworte:
ALUMINIUM ARSENIDES
CAPACITANCE
COMPUTERIZED SIMULATION
ENERGY SPECTRA
GALLIUM ARSENIDES
INDIUM ARSENIDES
LAYERS
Magnetic Materials
Magnetism
MATERIALS SCIENCE
ONE-DIMENSIONAL CALCULATIONS
Physics
Physics and Astronomy
Physics of Semiconductor Devices
POISSON EQUATION
QUANTUM WELLS
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Zusammenfassung:The depth distribution of free carriers over the HEMT structures with quantum-well layers is studied by electrochemical capacitance-voltage profiling. It is shown that the actual distribution of the concentration of free carriers and their energy spectrum in the HEMT structure channel can be obtained by numerical simulation of the results of profiling based on the self-consistent solution of one-dimensional Schrödinger and Poisson equations.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782611060078