Room-temperature optical absorption in the InAs/GaAs quantum-dot superlattice under an electric field
Electroluminescence and absorption spectra of a ten-layer InAs/GaAs quantum dot (QD) superlattice built in a two-section laser with sections of equal length is experimentally studied at room temperature. The thickness of the GaAs spacer layer between InAs QD layers, determined by transmission electr...
Gespeichert in:
| Veröffentlicht in: | Semiconductors (Woodbury, N.Y.) N.Y.), 2011-08, Vol.45 (8), p.1064-1069 |
|---|---|
| Hauptverfasser: | , , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 1069 |
|---|---|
| container_issue | 8 |
| container_start_page | 1064 |
| container_title | Semiconductors (Woodbury, N.Y.) |
| container_volume | 45 |
| creator | Sobolev, M. M. Gadzhiev, I. M. Bakshaev, I. O. Nevedomskii, V. N. Buyalo, M. S. Zadiranov, Yu. M. Portnoi, E. L. |
| description | Electroluminescence and absorption spectra of a ten-layer InAs/GaAs quantum dot (QD) superlattice built in a two-section laser with sections of equal length is experimentally studied at room temperature. The thickness of the GaAs spacer layer between InAs QD layers, determined by transmission electron microscopy, is ∼6 nm. In contrast to tunnel-coupled QDs, QD superlattices amplify the optical polarization intensity and waveguide absorption of the TM mode in comparison with the TE mode. It is found that variations in the multimodal periodic spectrum of differential absorption of the QD superlattice structure are strongly linearly dependent on the applied electric field. Differential absorption spectra exhibit the Wannier-Stark effect in the InAs/GaAs QD superlattice, in which, in the presence of an external electric field, coupling of wave functions of miniband electron states is suppressed and a series of discrete levels called the Wannier-Stark ladder states are formed. |
| doi_str_mv | 10.1134/S1063782611080203 |
| format | Article |
| fullrecord | <record><control><sourceid>gale_osti_</sourceid><recordid>TN_cdi_osti_scitechconnect_22004753</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><galeid>A361351317</galeid><sourcerecordid>A361351317</sourcerecordid><originalsourceid>FETCH-LOGICAL-c355t-ae9d8055f84d4e89f91eba82738891f94f2e2691932d303dde0f3c282090ae483</originalsourceid><addsrcrecordid>eNp9kE1LBDEMhgdRcF39Ad4Knkebdj7a47L4sbAg-HEeaptqZaZd287Bf2-X9SZIDgnJ-4S8qapLoNcAvLl5BtrxXrAOgArKKD-qFkAlrbuml8f7uuP1fn5anaX0SSmAaJtFhU8hTHXGaYdR5TkiCbvstBqJekshljp44jzJH0g2fpVu7tUqka9Z-TxPtQmZpLmgo8qFQjJ7g5EoT3BEnaPTxDoczXl1YtWY8OI3L6vXu9uX9UO9fbzfrFfbWvO2zbVCaQRtWysa06CQVgK-KcF6LoQEKxvLkHUSJGeGU24MUss1E6wYVdgIvqyuDntDym5I2mXUHzp4X44ZGKO06VteVNcH1bsacXDehhyVLmFwckWN1pX-infAW-DQFwAOgI4hpYh22EU3qfg9AB327x_-vL8w7MCkovXvGIfPMEdf3P8D_QAZN4Z1</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Room-temperature optical absorption in the InAs/GaAs quantum-dot superlattice under an electric field</title><source>SpringerLink Journals - AutoHoldings</source><creator>Sobolev, M. M. ; Gadzhiev, I. M. ; Bakshaev, I. O. ; Nevedomskii, V. N. ; Buyalo, M. S. ; Zadiranov, Yu. M. ; Portnoi, E. L.</creator><creatorcontrib>Sobolev, M. M. ; Gadzhiev, I. M. ; Bakshaev, I. O. ; Nevedomskii, V. N. ; Buyalo, M. S. ; Zadiranov, Yu. M. ; Portnoi, E. L.</creatorcontrib><description>Electroluminescence and absorption spectra of a ten-layer InAs/GaAs quantum dot (QD) superlattice built in a two-section laser with sections of equal length is experimentally studied at room temperature. The thickness of the GaAs spacer layer between InAs QD layers, determined by transmission electron microscopy, is ∼6 nm. In contrast to tunnel-coupled QDs, QD superlattices amplify the optical polarization intensity and waveguide absorption of the TM mode in comparison with the TE mode. It is found that variations in the multimodal periodic spectrum of differential absorption of the QD superlattice structure are strongly linearly dependent on the applied electric field. Differential absorption spectra exhibit the Wannier-Stark effect in the InAs/GaAs QD superlattice, in which, in the presence of an external electric field, coupling of wave functions of miniband electron states is suppressed and a series of discrete levels called the Wannier-Stark ladder states are formed.</description><identifier>ISSN: 1063-7826</identifier><identifier>EISSN: 1090-6479</identifier><identifier>DOI: 10.1134/S1063782611080203</identifier><language>eng</language><publisher>Dordrecht: SP MAIK Nauka/Interperiodica</publisher><subject>ABSORPTION ; ABSORPTION SPECTRA ; Analysis ; COMPARATIVE EVALUATIONS ; COUPLING ; ELECTRIC FIELDS ; ELECTROLUMINESCENCE ; ELECTRONS ; Gallium arsenide ; GALLIUM ARSENIDES ; INDIUM ARSENIDES ; LASERS ; LAYERS ; Low-Dimensional Systems ; Magnetic Materials ; Magnetism ; MATERIALS SCIENCE ; PERIODICITY ; Physics ; Physics and Astronomy ; POLARIZATION ; QUANTUM DOTS ; Quantum Phenomena ; Semiconductor Structures ; STARK EFFECT ; SUPERLATTICES ; THICKNESS ; TRANSMISSION ELECTRON MICROSCOPY ; Waveguides</subject><ispartof>Semiconductors (Woodbury, N.Y.), 2011-08, Vol.45 (8), p.1064-1069</ispartof><rights>Pleiades Publishing, Ltd. 2011</rights><rights>COPYRIGHT 2011 Springer</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c355t-ae9d8055f84d4e89f91eba82738891f94f2e2691932d303dde0f3c282090ae483</citedby><cites>FETCH-LOGICAL-c355t-ae9d8055f84d4e89f91eba82738891f94f2e2691932d303dde0f3c282090ae483</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1134/S1063782611080203$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1134/S1063782611080203$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>230,314,780,784,885,27924,27925,41488,42557,51319</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/22004753$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Sobolev, M. M.</creatorcontrib><creatorcontrib>Gadzhiev, I. M.</creatorcontrib><creatorcontrib>Bakshaev, I. O.</creatorcontrib><creatorcontrib>Nevedomskii, V. N.</creatorcontrib><creatorcontrib>Buyalo, M. S.</creatorcontrib><creatorcontrib>Zadiranov, Yu. M.</creatorcontrib><creatorcontrib>Portnoi, E. L.</creatorcontrib><title>Room-temperature optical absorption in the InAs/GaAs quantum-dot superlattice under an electric field</title><title>Semiconductors (Woodbury, N.Y.)</title><addtitle>Semiconductors</addtitle><description>Electroluminescence and absorption spectra of a ten-layer InAs/GaAs quantum dot (QD) superlattice built in a two-section laser with sections of equal length is experimentally studied at room temperature. The thickness of the GaAs spacer layer between InAs QD layers, determined by transmission electron microscopy, is ∼6 nm. In contrast to tunnel-coupled QDs, QD superlattices amplify the optical polarization intensity and waveguide absorption of the TM mode in comparison with the TE mode. It is found that variations in the multimodal periodic spectrum of differential absorption of the QD superlattice structure are strongly linearly dependent on the applied electric field. Differential absorption spectra exhibit the Wannier-Stark effect in the InAs/GaAs QD superlattice, in which, in the presence of an external electric field, coupling of wave functions of miniband electron states is suppressed and a series of discrete levels called the Wannier-Stark ladder states are formed.</description><subject>ABSORPTION</subject><subject>ABSORPTION SPECTRA</subject><subject>Analysis</subject><subject>COMPARATIVE EVALUATIONS</subject><subject>COUPLING</subject><subject>ELECTRIC FIELDS</subject><subject>ELECTROLUMINESCENCE</subject><subject>ELECTRONS</subject><subject>Gallium arsenide</subject><subject>GALLIUM ARSENIDES</subject><subject>INDIUM ARSENIDES</subject><subject>LASERS</subject><subject>LAYERS</subject><subject>Low-Dimensional Systems</subject><subject>Magnetic Materials</subject><subject>Magnetism</subject><subject>MATERIALS SCIENCE</subject><subject>PERIODICITY</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><subject>POLARIZATION</subject><subject>QUANTUM DOTS</subject><subject>Quantum Phenomena</subject><subject>Semiconductor Structures</subject><subject>STARK EFFECT</subject><subject>SUPERLATTICES</subject><subject>THICKNESS</subject><subject>TRANSMISSION ELECTRON MICROSCOPY</subject><subject>Waveguides</subject><issn>1063-7826</issn><issn>1090-6479</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2011</creationdate><recordtype>article</recordtype><recordid>eNp9kE1LBDEMhgdRcF39Ad4Knkebdj7a47L4sbAg-HEeaptqZaZd287Bf2-X9SZIDgnJ-4S8qapLoNcAvLl5BtrxXrAOgArKKD-qFkAlrbuml8f7uuP1fn5anaX0SSmAaJtFhU8hTHXGaYdR5TkiCbvstBqJekshljp44jzJH0g2fpVu7tUqka9Z-TxPtQmZpLmgo8qFQjJ7g5EoT3BEnaPTxDoczXl1YtWY8OI3L6vXu9uX9UO9fbzfrFfbWvO2zbVCaQRtWysa06CQVgK-KcF6LoQEKxvLkHUSJGeGU24MUss1E6wYVdgIvqyuDntDym5I2mXUHzp4X44ZGKO06VteVNcH1bsacXDehhyVLmFwckWN1pX-infAW-DQFwAOgI4hpYh22EU3qfg9AB327x_-vL8w7MCkovXvGIfPMEdf3P8D_QAZN4Z1</recordid><startdate>20110801</startdate><enddate>20110801</enddate><creator>Sobolev, M. M.</creator><creator>Gadzhiev, I. M.</creator><creator>Bakshaev, I. O.</creator><creator>Nevedomskii, V. N.</creator><creator>Buyalo, M. S.</creator><creator>Zadiranov, Yu. M.</creator><creator>Portnoi, E. L.</creator><general>SP MAIK Nauka/Interperiodica</general><general>Springer</general><scope>AAYXX</scope><scope>CITATION</scope><scope>OTOTI</scope></search><sort><creationdate>20110801</creationdate><title>Room-temperature optical absorption in the InAs/GaAs quantum-dot superlattice under an electric field</title><author>Sobolev, M. M. ; Gadzhiev, I. M. ; Bakshaev, I. O. ; Nevedomskii, V. N. ; Buyalo, M. S. ; Zadiranov, Yu. M. ; Portnoi, E. L.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c355t-ae9d8055f84d4e89f91eba82738891f94f2e2691932d303dde0f3c282090ae483</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2011</creationdate><topic>ABSORPTION</topic><topic>ABSORPTION SPECTRA</topic><topic>Analysis</topic><topic>COMPARATIVE EVALUATIONS</topic><topic>COUPLING</topic><topic>ELECTRIC FIELDS</topic><topic>ELECTROLUMINESCENCE</topic><topic>ELECTRONS</topic><topic>Gallium arsenide</topic><topic>GALLIUM ARSENIDES</topic><topic>INDIUM ARSENIDES</topic><topic>LASERS</topic><topic>LAYERS</topic><topic>Low-Dimensional Systems</topic><topic>Magnetic Materials</topic><topic>Magnetism</topic><topic>MATERIALS SCIENCE</topic><topic>PERIODICITY</topic><topic>Physics</topic><topic>Physics and Astronomy</topic><topic>POLARIZATION</topic><topic>QUANTUM DOTS</topic><topic>Quantum Phenomena</topic><topic>Semiconductor Structures</topic><topic>STARK EFFECT</topic><topic>SUPERLATTICES</topic><topic>THICKNESS</topic><topic>TRANSMISSION ELECTRON MICROSCOPY</topic><topic>Waveguides</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Sobolev, M. M.</creatorcontrib><creatorcontrib>Gadzhiev, I. M.</creatorcontrib><creatorcontrib>Bakshaev, I. O.</creatorcontrib><creatorcontrib>Nevedomskii, V. N.</creatorcontrib><creatorcontrib>Buyalo, M. S.</creatorcontrib><creatorcontrib>Zadiranov, Yu. M.</creatorcontrib><creatorcontrib>Portnoi, E. L.</creatorcontrib><collection>CrossRef</collection><collection>OSTI.GOV</collection><jtitle>Semiconductors (Woodbury, N.Y.)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Sobolev, M. M.</au><au>Gadzhiev, I. M.</au><au>Bakshaev, I. O.</au><au>Nevedomskii, V. N.</au><au>Buyalo, M. S.</au><au>Zadiranov, Yu. M.</au><au>Portnoi, E. L.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Room-temperature optical absorption in the InAs/GaAs quantum-dot superlattice under an electric field</atitle><jtitle>Semiconductors (Woodbury, N.Y.)</jtitle><stitle>Semiconductors</stitle><date>2011-08-01</date><risdate>2011</risdate><volume>45</volume><issue>8</issue><spage>1064</spage><epage>1069</epage><pages>1064-1069</pages><issn>1063-7826</issn><eissn>1090-6479</eissn><abstract>Electroluminescence and absorption spectra of a ten-layer InAs/GaAs quantum dot (QD) superlattice built in a two-section laser with sections of equal length is experimentally studied at room temperature. The thickness of the GaAs spacer layer between InAs QD layers, determined by transmission electron microscopy, is ∼6 nm. In contrast to tunnel-coupled QDs, QD superlattices amplify the optical polarization intensity and waveguide absorption of the TM mode in comparison with the TE mode. It is found that variations in the multimodal periodic spectrum of differential absorption of the QD superlattice structure are strongly linearly dependent on the applied electric field. Differential absorption spectra exhibit the Wannier-Stark effect in the InAs/GaAs QD superlattice, in which, in the presence of an external electric field, coupling of wave functions of miniband electron states is suppressed and a series of discrete levels called the Wannier-Stark ladder states are formed.</abstract><cop>Dordrecht</cop><pub>SP MAIK Nauka/Interperiodica</pub><doi>10.1134/S1063782611080203</doi><tpages>6</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 1063-7826 |
| ispartof | Semiconductors (Woodbury, N.Y.), 2011-08, Vol.45 (8), p.1064-1069 |
| issn | 1063-7826 1090-6479 |
| language | eng |
| recordid | cdi_osti_scitechconnect_22004753 |
| source | SpringerLink Journals - AutoHoldings |
| subjects | ABSORPTION ABSORPTION SPECTRA Analysis COMPARATIVE EVALUATIONS COUPLING ELECTRIC FIELDS ELECTROLUMINESCENCE ELECTRONS Gallium arsenide GALLIUM ARSENIDES INDIUM ARSENIDES LASERS LAYERS Low-Dimensional Systems Magnetic Materials Magnetism MATERIALS SCIENCE PERIODICITY Physics Physics and Astronomy POLARIZATION QUANTUM DOTS Quantum Phenomena Semiconductor Structures STARK EFFECT SUPERLATTICES THICKNESS TRANSMISSION ELECTRON MICROSCOPY Waveguides |
| title | Room-temperature optical absorption in the InAs/GaAs quantum-dot superlattice under an electric field |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-08T05%3A16%3A35IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-gale_osti_&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Room-temperature%20optical%20absorption%20in%20the%20InAs/GaAs%20quantum-dot%20superlattice%20under%20an%20electric%20field&rft.jtitle=Semiconductors%20(Woodbury,%20N.Y.)&rft.au=Sobolev,%20M.%20M.&rft.date=2011-08-01&rft.volume=45&rft.issue=8&rft.spage=1064&rft.epage=1069&rft.pages=1064-1069&rft.issn=1063-7826&rft.eissn=1090-6479&rft_id=info:doi/10.1134/S1063782611080203&rft_dat=%3Cgale_osti_%3EA361351317%3C/gale_osti_%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_galeid=A361351317&rfr_iscdi=true |