Mechanisms of charge transport in anisotype n-TiO{sub 2}/p-CdTe heterojunctions
Surface-barrier anisotype n-TiO{sub 2}/p-CdTe heterojunctions are fabricated by depositing thin titanium-dioxide films on a freshly cleaved surface of single-crystalline cadmium-telluride wafers by reactive magnetron sputtering. It is established that the electric current through the heterojunctions...
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Veröffentlicht in: | Semiconductors (Woodbury, N.Y.) N.Y.), 2011-08, Vol.45 (8) |
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container_title | Semiconductors (Woodbury, N.Y.) |
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creator | Brus, V. V. Ilashchuk, M. I. Kovalyuk, Z. D. Maryanchuk, P. D. Ulyanytsky, K. S. Gritsyuk, B. N. |
description | Surface-barrier anisotype n-TiO{sub 2}/p-CdTe heterojunctions are fabricated by depositing thin titanium-dioxide films on a freshly cleaved surface of single-crystalline cadmium-telluride wafers by reactive magnetron sputtering. It is established that the electric current through the heterojunctions under investigation is formed by generation-recombination processes in the space-charge region via a deep energy level and tunneling through the potential barrier. The depth and nature of the impurity centers involved in the charge transport are determined. |
doi_str_mv | 10.1134/S1063782611080045 |
format | Article |
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subjects | CADMIUM CADMIUM TELLURIDES CHARGE TRANSPORT ELECTRIC CURRENTS ENERGY LEVELS HETEROJUNCTIONS IMPURITIES MAGNETRONS MATERIALS SCIENCE MONOCRYSTALS RECOMBINATION SPACE CHARGE SPUTTERING SURFACES TITANIUM OXIDES TUNNEL EFFECT |
title | Mechanisms of charge transport in anisotype n-TiO{sub 2}/p-CdTe heterojunctions |
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