Mechanisms of charge transport in anisotype n-TiO{sub 2}/p-CdTe heterojunctions

Surface-barrier anisotype n-TiO{sub 2}/p-CdTe heterojunctions are fabricated by depositing thin titanium-dioxide films on a freshly cleaved surface of single-crystalline cadmium-telluride wafers by reactive magnetron sputtering. It is established that the electric current through the heterojunctions...

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Veröffentlicht in:Semiconductors (Woodbury, N.Y.) N.Y.), 2011-08, Vol.45 (8)
Hauptverfasser: Brus, V. V., Ilashchuk, M. I., Kovalyuk, Z. D., Maryanchuk, P. D., Ulyanytsky, K. S., Gritsyuk, B. N.
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container_issue 8
container_start_page
container_title Semiconductors (Woodbury, N.Y.)
container_volume 45
creator Brus, V. V.
Ilashchuk, M. I.
Kovalyuk, Z. D.
Maryanchuk, P. D.
Ulyanytsky, K. S.
Gritsyuk, B. N.
description Surface-barrier anisotype n-TiO{sub 2}/p-CdTe heterojunctions are fabricated by depositing thin titanium-dioxide films on a freshly cleaved surface of single-crystalline cadmium-telluride wafers by reactive magnetron sputtering. It is established that the electric current through the heterojunctions under investigation is formed by generation-recombination processes in the space-charge region via a deep energy level and tunneling through the potential barrier. The depth and nature of the impurity centers involved in the charge transport are determined.
doi_str_mv 10.1134/S1063782611080045
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subjects CADMIUM
CADMIUM TELLURIDES
CHARGE TRANSPORT
ELECTRIC CURRENTS
ENERGY LEVELS
HETEROJUNCTIONS
IMPURITIES
MAGNETRONS
MATERIALS SCIENCE
MONOCRYSTALS
RECOMBINATION
SPACE CHARGE
SPUTTERING
SURFACES
TITANIUM OXIDES
TUNNEL EFFECT
title Mechanisms of charge transport in anisotype n-TiO{sub 2}/p-CdTe heterojunctions
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