The influence of a doping profile on the characteristics of an ion-implanted GaAs field-effect transistor with a Schottky barrier
A GaAs field-effect ion-implanted transistor with a Schottky barrier is simulated. The doping profile obtained when doping through an insulator mask is determined and the dependences of the static transistor characteristics on the parameters of the doping profile are calculated and analyzed. The phy...
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| Veröffentlicht in: | Semiconductors (Woodbury, N.Y.) N.Y.), 2011-12, Vol.45 (12), p.1589-1599 |
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| container_title | Semiconductors (Woodbury, N.Y.) |
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| creator | Shestakov, A. K. Zhuravlev, K. S. |
| description | A GaAs field-effect ion-implanted transistor with a Schottky barrier is simulated. The doping profile obtained when doping through an insulator mask is determined and the dependences of the static transistor characteristics on the parameters of the doping profile are calculated and analyzed. The physical processes controlling the transistor characteristics in the case of a variation in the parameters of its doping profile and the coefficient of compensation of the substrate are studied. Based on calculations, the optimal doping-profile parameters ensuring the best characteristics for transistors are predicted. |
| doi_str_mv | 10.1134/S1063782611120128 |
| format | Article |
| fullrecord | <record><control><sourceid>gale_osti_</sourceid><recordid>TN_cdi_osti_scitechconnect_22004681</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><galeid>A361351388</galeid><sourcerecordid>A361351388</sourcerecordid><originalsourceid>FETCH-LOGICAL-c307t-f2e608dd5c7c594b8a2db3bb56fed0eb7208ab6489578b333a350889468f19083</originalsourceid><addsrcrecordid>eNp9kU1rGzEQhpeSQhy3PyA3Qc6baKRdrfZoQusWDD3YPQutduSVu5aMpFBy7D-vNu4tUOagYfS8L_NRVfdAHwF487QHKngnmQAARoHJD9UKaE9r0XT9zZILXi__t9VdSidKAWTbrKo_hwmJ83Z-QW-QBEs0GcPF-SO5xGDdXGqe5AKZSUdtMkaXsjPpDfXEBV-782XWPuNItnqTiHU4jzVaiyaTHLVPRREi-e3yVNz3Zgo5_3olg47RYfxUfbR6Tvj537uufn79cnj-Vu9-bL8_b3a14bTLtWUoqBzH1nSm7ZtBajYOfBhaYXGkOHSMSj2IRvZtJwfOueYtlbJvhLTQU8nX1cPVN5T-VTIuo5lM8L60qRijtJBQqMcrddQzqrKYUCYwJUY8u0LjshK14QJ4C1wutnAVmBhSimjVJbqzjq8KqFpOo96dpmjYVZMK648Y1Sm8RF-m_4_oL3eVkH4</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>The influence of a doping profile on the characteristics of an ion-implanted GaAs field-effect transistor with a Schottky barrier</title><source>SpringerLink (Online service)</source><creator>Shestakov, A. K. ; Zhuravlev, K. S.</creator><creatorcontrib>Shestakov, A. K. ; Zhuravlev, K. S.</creatorcontrib><description>A GaAs field-effect ion-implanted transistor with a Schottky barrier is simulated. The doping profile obtained when doping through an insulator mask is determined and the dependences of the static transistor characteristics on the parameters of the doping profile are calculated and analyzed. The physical processes controlling the transistor characteristics in the case of a variation in the parameters of its doping profile and the coefficient of compensation of the substrate are studied. Based on calculations, the optimal doping-profile parameters ensuring the best characteristics for transistors are predicted.</description><identifier>ISSN: 1063-7826</identifier><identifier>EISSN: 1090-6479</identifier><identifier>DOI: 10.1134/S1063782611120128</identifier><language>eng</language><publisher>Dordrecht: SP MAIK Nauka/Interperiodica</publisher><subject>Analysis ; Arsenic compounds ; Epitaxy ; FIELD EFFECT TRANSISTORS ; Gallium arsenide ; GALLIUM ARSENIDES ; ION IMPLANTATION ; Magnetic Materials ; Magnetism ; MATERIALS SCIENCE ; Physics ; Physics and Astronomy ; Physics of Semiconductor Devices ; Semiconductor industry ; SIMULATION ; SUBSTRATES ; Transistors</subject><ispartof>Semiconductors (Woodbury, N.Y.), 2011-12, Vol.45 (12), p.1589-1599</ispartof><rights>Pleiades Publishing, Ltd. 2011</rights><rights>COPYRIGHT 2011 Springer</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c307t-f2e608dd5c7c594b8a2db3bb56fed0eb7208ab6489578b333a350889468f19083</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1134/S1063782611120128$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1134/S1063782611120128$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>230,314,776,780,881,27901,27902,41464,42533,51294</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/22004681$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Shestakov, A. K.</creatorcontrib><creatorcontrib>Zhuravlev, K. S.</creatorcontrib><title>The influence of a doping profile on the characteristics of an ion-implanted GaAs field-effect transistor with a Schottky barrier</title><title>Semiconductors (Woodbury, N.Y.)</title><addtitle>Semiconductors</addtitle><description>A GaAs field-effect ion-implanted transistor with a Schottky barrier is simulated. The doping profile obtained when doping through an insulator mask is determined and the dependences of the static transistor characteristics on the parameters of the doping profile are calculated and analyzed. The physical processes controlling the transistor characteristics in the case of a variation in the parameters of its doping profile and the coefficient of compensation of the substrate are studied. Based on calculations, the optimal doping-profile parameters ensuring the best characteristics for transistors are predicted.</description><subject>Analysis</subject><subject>Arsenic compounds</subject><subject>Epitaxy</subject><subject>FIELD EFFECT TRANSISTORS</subject><subject>Gallium arsenide</subject><subject>GALLIUM ARSENIDES</subject><subject>ION IMPLANTATION</subject><subject>Magnetic Materials</subject><subject>Magnetism</subject><subject>MATERIALS SCIENCE</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><subject>Physics of Semiconductor Devices</subject><subject>Semiconductor industry</subject><subject>SIMULATION</subject><subject>SUBSTRATES</subject><subject>Transistors</subject><issn>1063-7826</issn><issn>1090-6479</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2011</creationdate><recordtype>article</recordtype><recordid>eNp9kU1rGzEQhpeSQhy3PyA3Qc6baKRdrfZoQusWDD3YPQutduSVu5aMpFBy7D-vNu4tUOagYfS8L_NRVfdAHwF487QHKngnmQAARoHJD9UKaE9r0XT9zZILXi__t9VdSidKAWTbrKo_hwmJ83Z-QW-QBEs0GcPF-SO5xGDdXGqe5AKZSUdtMkaXsjPpDfXEBV-782XWPuNItnqTiHU4jzVaiyaTHLVPRREi-e3yVNz3Zgo5_3olg47RYfxUfbR6Tvj537uufn79cnj-Vu9-bL8_b3a14bTLtWUoqBzH1nSm7ZtBajYOfBhaYXGkOHSMSj2IRvZtJwfOueYtlbJvhLTQU8nX1cPVN5T-VTIuo5lM8L60qRijtJBQqMcrddQzqrKYUCYwJUY8u0LjshK14QJ4C1wutnAVmBhSimjVJbqzjq8KqFpOo96dpmjYVZMK648Y1Sm8RF-m_4_oL3eVkH4</recordid><startdate>20111201</startdate><enddate>20111201</enddate><creator>Shestakov, A. K.</creator><creator>Zhuravlev, K. S.</creator><general>SP MAIK Nauka/Interperiodica</general><general>Springer</general><scope>AAYXX</scope><scope>CITATION</scope><scope>OTOTI</scope></search><sort><creationdate>20111201</creationdate><title>The influence of a doping profile on the characteristics of an ion-implanted GaAs field-effect transistor with a Schottky barrier</title><author>Shestakov, A. K. ; Zhuravlev, K. S.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c307t-f2e608dd5c7c594b8a2db3bb56fed0eb7208ab6489578b333a350889468f19083</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2011</creationdate><topic>Analysis</topic><topic>Arsenic compounds</topic><topic>Epitaxy</topic><topic>FIELD EFFECT TRANSISTORS</topic><topic>Gallium arsenide</topic><topic>GALLIUM ARSENIDES</topic><topic>ION IMPLANTATION</topic><topic>Magnetic Materials</topic><topic>Magnetism</topic><topic>MATERIALS SCIENCE</topic><topic>Physics</topic><topic>Physics and Astronomy</topic><topic>Physics of Semiconductor Devices</topic><topic>Semiconductor industry</topic><topic>SIMULATION</topic><topic>SUBSTRATES</topic><topic>Transistors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Shestakov, A. K.</creatorcontrib><creatorcontrib>Zhuravlev, K. S.</creatorcontrib><collection>CrossRef</collection><collection>OSTI.GOV</collection><jtitle>Semiconductors (Woodbury, N.Y.)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Shestakov, A. K.</au><au>Zhuravlev, K. S.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>The influence of a doping profile on the characteristics of an ion-implanted GaAs field-effect transistor with a Schottky barrier</atitle><jtitle>Semiconductors (Woodbury, N.Y.)</jtitle><stitle>Semiconductors</stitle><date>2011-12-01</date><risdate>2011</risdate><volume>45</volume><issue>12</issue><spage>1589</spage><epage>1599</epage><pages>1589-1599</pages><issn>1063-7826</issn><eissn>1090-6479</eissn><abstract>A GaAs field-effect ion-implanted transistor with a Schottky barrier is simulated. The doping profile obtained when doping through an insulator mask is determined and the dependences of the static transistor characteristics on the parameters of the doping profile are calculated and analyzed. The physical processes controlling the transistor characteristics in the case of a variation in the parameters of its doping profile and the coefficient of compensation of the substrate are studied. Based on calculations, the optimal doping-profile parameters ensuring the best characteristics for transistors are predicted.</abstract><cop>Dordrecht</cop><pub>SP MAIK Nauka/Interperiodica</pub><doi>10.1134/S1063782611120128</doi><tpages>11</tpages></addata></record> |
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| ispartof | Semiconductors (Woodbury, N.Y.), 2011-12, Vol.45 (12), p.1589-1599 |
| issn | 1063-7826 1090-6479 |
| language | eng |
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| source | SpringerLink (Online service) |
| subjects | Analysis Arsenic compounds Epitaxy FIELD EFFECT TRANSISTORS Gallium arsenide GALLIUM ARSENIDES ION IMPLANTATION Magnetic Materials Magnetism MATERIALS SCIENCE Physics Physics and Astronomy Physics of Semiconductor Devices Semiconductor industry SIMULATION SUBSTRATES Transistors |
| title | The influence of a doping profile on the characteristics of an ion-implanted GaAs field-effect transistor with a Schottky barrier |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-14T14%3A12%3A58IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-gale_osti_&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=The%20influence%20of%20a%20doping%20profile%20on%20the%20characteristics%20of%20an%20ion-implanted%20GaAs%20field-effect%20transistor%20with%20a%20Schottky%20barrier&rft.jtitle=Semiconductors%20(Woodbury,%20N.Y.)&rft.au=Shestakov,%20A.%20K.&rft.date=2011-12-01&rft.volume=45&rft.issue=12&rft.spage=1589&rft.epage=1599&rft.pages=1589-1599&rft.issn=1063-7826&rft.eissn=1090-6479&rft_id=info:doi/10.1134/S1063782611120128&rft_dat=%3Cgale_osti_%3EA361351388%3C/gale_osti_%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_galeid=A361351388&rfr_iscdi=true |