Growth conditions, structure, Raman characterization and optical properties of Sm-doped (Lu{sub x}Gd{sub 1-x}){sub 2}SiO{sub 5} single crystals grown by the Czochralski method
The (Lu{sub x}Gd{sub 0.995-x}Sm{sub 0.005}){sub 2}SiO{sub 5} single crystals with x=0.095, 0.11, 0.15, 0.17, 0.19 0.35 and 0.5 were grown by the Czochralski method. Structural properties were investigated by X-ray diffraction measurements. Unit cell parameters and cell volume were determined by the...
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| Veröffentlicht in: | Journal of solid state chemistry 2012-02, Vol.186 |
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| creator | GLowacki, MichaL Dominiak-Dzik, Grazyna Ryba-Romanowski, Witold Lisiecki, RadosLaw Strzep, Adam Runka, Tomasz Drozdowski, MirosLaw Domukhovski, Viktor Diduszko, Ryszard Institute of Electronic Materials Technology, ul. Wolczynska 133, 01-919 Warsaw Berkowski, Marek |
| description | The (Lu{sub x}Gd{sub 0.995-x}Sm{sub 0.005}){sub 2}SiO{sub 5} single crystals with x=0.095, 0.11, 0.15, 0.17, 0.19 0.35 and 0.5 were grown by the Czochralski method. Structural properties were investigated by X-ray diffraction measurements. Unit cell parameters and cell volume were determined by the Rietveld refinement of the collected X-ray powder spectra. The segregation features between Gd and Lu were estimated and analyzed. Vibrational properties of the solid solutions were analyzed on the basis of polarized Raman spectra acquired at 300-875 K temperature range. Absorption and emission spectra of Sm{sup 3+} ion in the crystals with different composition were analyzed in the terms of dopant energy levels, oscillator strengths of transitions and spectral features of luminescence bands in the visible range. Both structural and optical investigations revealed that change of Lu{sup 3+} content in (Lu{sub x}Gd{sub 0.995-x}Sm{sub 0.005}){sub 2}SiO{sub 5} solid solution crystals induces the phase transition from C2/c (Lu{sub 2}SiO{sub 5}) to P2{sub 1}/c (Gd{sub 2}SiO{sub 5}) structure. It was found that the break of LSO to GSO-type structure occurs at 0.15 |
| doi_str_mv | 10.1016/j.jssc.2011.12.021 |
| format | Article |
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Wolczynska 133, 01-919 Warsaw ; Berkowski, Marek</creator><creatorcontrib>GLowacki, MichaL ; Dominiak-Dzik, Grazyna ; Ryba-Romanowski, Witold ; Lisiecki, RadosLaw ; Strzep, Adam ; Runka, Tomasz ; Drozdowski, MirosLaw ; Domukhovski, Viktor ; Diduszko, Ryszard ; Institute of Electronic Materials Technology, ul. Wolczynska 133, 01-919 Warsaw ; Berkowski, Marek</creatorcontrib><description><![CDATA[The (Lu{sub x}Gd{sub 0.995-x}Sm{sub 0.005}){sub 2}SiO{sub 5} single crystals with x=0.095, 0.11, 0.15, 0.17, 0.19 0.35 and 0.5 were grown by the Czochralski method. Structural properties were investigated by X-ray diffraction measurements. Unit cell parameters and cell volume were determined by the Rietveld refinement of the collected X-ray powder spectra. The segregation features between Gd and Lu were estimated and analyzed. Vibrational properties of the solid solutions were analyzed on the basis of polarized Raman spectra acquired at 300-875 K temperature range. Absorption and emission spectra of Sm{sup 3+} ion in the crystals with different composition were analyzed in the terms of dopant energy levels, oscillator strengths of transitions and spectral features of luminescence bands in the visible range. Both structural and optical investigations revealed that change of Lu{sup 3+} content in (Lu{sub x}Gd{sub 0.995-x}Sm{sub 0.005}){sub 2}SiO{sub 5} solid solution crystals induces the phase transition from C2/c (Lu{sub 2}SiO{sub 5}) to P2{sub 1}/c (Gd{sub 2}SiO{sub 5}) structure. It was found that the break of LSO to GSO-type structure occurs at 0.15<x<0.17. - Graphical abstract: Single crystals of Sm{sup 3+}-doped (Lu{sub x}Gd{sub 1-x}){sub 2}SiO{sub 5} solid solutions have been grown by Czochralski method and characterized by various techniques. Crystal structure changes from C2/c to P2{sub 1}/c for composition with 0.15<x<0.17. Change of crystal structure causes changes in emission spectra. Highlights: Black-Right-Pointing-Pointer The (Lu{sub x}Gd{sub 1-x}){sub 2}SiO{sub 5} crystals are an alternative to LSO and GSO hosts for applications. Black-Right-Pointing-Pointer The break of the P2{sub 1}/c to C2/c structure in (Lu{sub x}Gd{sub 1-x}){sub 2}SiO{sub 5}:Sm occurs for 0.15<x<0.17. Black-Right-Pointing-Pointer Temperature-induced phase transition from C2/c to P2{sub 1}/c up to 875 K was not observed. Black-Right-Pointing-Pointer Observed significant changes of emission spectra caused by P2{sub 1}/c to C2/c structural transition.]]></description><identifier>ISSN: 0022-4596</identifier><identifier>EISSN: 1095-726X</identifier><identifier>DOI: 10.1016/j.jssc.2011.12.021</identifier><language>eng</language><publisher>United States</publisher><subject>ABSORPTION ; COHERENT SCATTERING ; CRYSTAL GROWTH METHODS ; CRYSTAL LATTICES ; CRYSTAL STRUCTURE ; CRYSTALS ; CZOCHRALSKI METHOD ; DIFFRACTION ; DISPERSIONS ; DOPED MATERIALS ; ELECTROMAGNETIC RADIATION ; ELEMENTS ; EMISSION ; EMISSION SPECTRA ; ENERGY LEVELS ; HOMOGENEOUS MIXTURES ; INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY ; IONIZING RADIATIONS ; LUMINESCENCE ; MATERIALS ; METALS ; MIXTURES ; MONOCLINIC LATTICES ; MONOCRYSTALS ; OPTICAL PROPERTIES ; OSCILLATOR STRENGTHS ; OXYGEN COMPOUNDS ; PHASE TRANSFORMATIONS ; PHOTON EMISSION ; PHYSICAL PROPERTIES ; POWDERS ; RADIATIONS ; RAMAN SPECTRA ; RARE EARTHS ; SCATTERING ; SILICATES ; SILICON COMPOUNDS ; SOLID SOLUTIONS ; SOLUTIONS ; SORPTION ; SPECTRA ; X RADIATION ; X-RAY DIFFRACTION</subject><ispartof>Journal of solid state chemistry, 2012-02, Vol.186</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,314,780,784,885,27915,27916</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/21612922$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>GLowacki, MichaL</creatorcontrib><creatorcontrib>Dominiak-Dzik, Grazyna</creatorcontrib><creatorcontrib>Ryba-Romanowski, Witold</creatorcontrib><creatorcontrib>Lisiecki, RadosLaw</creatorcontrib><creatorcontrib>Strzep, Adam</creatorcontrib><creatorcontrib>Runka, Tomasz</creatorcontrib><creatorcontrib>Drozdowski, MirosLaw</creatorcontrib><creatorcontrib>Domukhovski, Viktor</creatorcontrib><creatorcontrib>Diduszko, Ryszard</creatorcontrib><creatorcontrib>Institute of Electronic Materials Technology, ul. Wolczynska 133, 01-919 Warsaw</creatorcontrib><creatorcontrib>Berkowski, Marek</creatorcontrib><title>Growth conditions, structure, Raman characterization and optical properties of Sm-doped (Lu{sub x}Gd{sub 1-x}){sub 2}SiO{sub 5} single crystals grown by the Czochralski method</title><title>Journal of solid state chemistry</title><description><![CDATA[The (Lu{sub x}Gd{sub 0.995-x}Sm{sub 0.005}){sub 2}SiO{sub 5} single crystals with x=0.095, 0.11, 0.15, 0.17, 0.19 0.35 and 0.5 were grown by the Czochralski method. Structural properties were investigated by X-ray diffraction measurements. Unit cell parameters and cell volume were determined by the Rietveld refinement of the collected X-ray powder spectra. The segregation features between Gd and Lu were estimated and analyzed. Vibrational properties of the solid solutions were analyzed on the basis of polarized Raman spectra acquired at 300-875 K temperature range. Absorption and emission spectra of Sm{sup 3+} ion in the crystals with different composition were analyzed in the terms of dopant energy levels, oscillator strengths of transitions and spectral features of luminescence bands in the visible range. Both structural and optical investigations revealed that change of Lu{sup 3+} content in (Lu{sub x}Gd{sub 0.995-x}Sm{sub 0.005}){sub 2}SiO{sub 5} solid solution crystals induces the phase transition from C2/c (Lu{sub 2}SiO{sub 5}) to P2{sub 1}/c (Gd{sub 2}SiO{sub 5}) structure. It was found that the break of LSO to GSO-type structure occurs at 0.15<x<0.17. - Graphical abstract: Single crystals of Sm{sup 3+}-doped (Lu{sub x}Gd{sub 1-x}){sub 2}SiO{sub 5} solid solutions have been grown by Czochralski method and characterized by various techniques. Crystal structure changes from C2/c to P2{sub 1}/c for composition with 0.15<x<0.17. Change of crystal structure causes changes in emission spectra. Highlights: Black-Right-Pointing-Pointer The (Lu{sub x}Gd{sub 1-x}){sub 2}SiO{sub 5} crystals are an alternative to LSO and GSO hosts for applications. Black-Right-Pointing-Pointer The break of the P2{sub 1}/c to C2/c structure in (Lu{sub x}Gd{sub 1-x}){sub 2}SiO{sub 5}:Sm occurs for 0.15<x<0.17. Black-Right-Pointing-Pointer Temperature-induced phase transition from C2/c to P2{sub 1}/c up to 875 K was not observed. Black-Right-Pointing-Pointer Observed significant changes of emission spectra caused by P2{sub 1}/c to C2/c structural transition.]]></description><subject>ABSORPTION</subject><subject>COHERENT SCATTERING</subject><subject>CRYSTAL GROWTH METHODS</subject><subject>CRYSTAL LATTICES</subject><subject>CRYSTAL STRUCTURE</subject><subject>CRYSTALS</subject><subject>CZOCHRALSKI METHOD</subject><subject>DIFFRACTION</subject><subject>DISPERSIONS</subject><subject>DOPED MATERIALS</subject><subject>ELECTROMAGNETIC RADIATION</subject><subject>ELEMENTS</subject><subject>EMISSION</subject><subject>EMISSION SPECTRA</subject><subject>ENERGY LEVELS</subject><subject>HOMOGENEOUS MIXTURES</subject><subject>INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY</subject><subject>IONIZING RADIATIONS</subject><subject>LUMINESCENCE</subject><subject>MATERIALS</subject><subject>METALS</subject><subject>MIXTURES</subject><subject>MONOCLINIC LATTICES</subject><subject>MONOCRYSTALS</subject><subject>OPTICAL PROPERTIES</subject><subject>OSCILLATOR STRENGTHS</subject><subject>OXYGEN COMPOUNDS</subject><subject>PHASE TRANSFORMATIONS</subject><subject>PHOTON EMISSION</subject><subject>PHYSICAL PROPERTIES</subject><subject>POWDERS</subject><subject>RADIATIONS</subject><subject>RAMAN SPECTRA</subject><subject>RARE EARTHS</subject><subject>SCATTERING</subject><subject>SILICATES</subject><subject>SILICON COMPOUNDS</subject><subject>SOLID SOLUTIONS</subject><subject>SOLUTIONS</subject><subject>SORPTION</subject><subject>SPECTRA</subject><subject>X RADIATION</subject><subject>X-RAY DIFFRACTION</subject><issn>0022-4596</issn><issn>1095-726X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2012</creationdate><recordtype>article</recordtype><recordid>eNqNj01OwzAQhS0EEuHnAqxGYgNSE2zTBLKuoCyQkCgLdpXruI1DYkeeiWiLciauSIg4AKv3vdG3mMfYheCJ4CK7qZIKUSeSC5EImXApDlgkeJ7GdzJ7P2QR51LG0zTPjtkJYsUHMb2fRux7HvwnlaC9KyxZ73ACSKHT1AUzgVfVKAe6VEFpMsHu1a8DyhXgW7Ja1dAG35pA1iD4NSyauBh6AVfP3Rd2K9j282IEEW_765Fkv7AvI6U9oHWb2oAOOyRVI2yGfxysdkClgdne6zIM5w8LjaHSF2fsaD10c_6Xp-zy8eFt9hR7JLtEbcnochjjjKalFJmQuZS3_7N-AMxmaqU</recordid><startdate>20120215</startdate><enddate>20120215</enddate><creator>GLowacki, MichaL</creator><creator>Dominiak-Dzik, Grazyna</creator><creator>Ryba-Romanowski, Witold</creator><creator>Lisiecki, RadosLaw</creator><creator>Strzep, Adam</creator><creator>Runka, Tomasz</creator><creator>Drozdowski, MirosLaw</creator><creator>Domukhovski, Viktor</creator><creator>Diduszko, Ryszard</creator><creator>Institute of Electronic Materials Technology, ul. Wolczynska 133, 01-919 Warsaw</creator><creator>Berkowski, Marek</creator><scope>OTOTI</scope></search><sort><creationdate>20120215</creationdate><title>Growth conditions, structure, Raman characterization and optical properties of Sm-doped (Lu{sub x}Gd{sub 1-x}){sub 2}SiO{sub 5} single crystals grown by the Czochralski method</title><author>GLowacki, MichaL ; Dominiak-Dzik, Grazyna ; Ryba-Romanowski, Witold ; Lisiecki, RadosLaw ; Strzep, Adam ; Runka, Tomasz ; Drozdowski, MirosLaw ; Domukhovski, Viktor ; Diduszko, Ryszard ; Institute of Electronic Materials Technology, ul. Wolczynska 133, 01-919 Warsaw ; Berkowski, Marek</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-osti_scitechconnect_216129223</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2012</creationdate><topic>ABSORPTION</topic><topic>COHERENT SCATTERING</topic><topic>CRYSTAL GROWTH METHODS</topic><topic>CRYSTAL LATTICES</topic><topic>CRYSTAL STRUCTURE</topic><topic>CRYSTALS</topic><topic>CZOCHRALSKI METHOD</topic><topic>DIFFRACTION</topic><topic>DISPERSIONS</topic><topic>DOPED MATERIALS</topic><topic>ELECTROMAGNETIC RADIATION</topic><topic>ELEMENTS</topic><topic>EMISSION</topic><topic>EMISSION SPECTRA</topic><topic>ENERGY LEVELS</topic><topic>HOMOGENEOUS MIXTURES</topic><topic>INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY</topic><topic>IONIZING RADIATIONS</topic><topic>LUMINESCENCE</topic><topic>MATERIALS</topic><topic>METALS</topic><topic>MIXTURES</topic><topic>MONOCLINIC LATTICES</topic><topic>MONOCRYSTALS</topic><topic>OPTICAL PROPERTIES</topic><topic>OSCILLATOR STRENGTHS</topic><topic>OXYGEN COMPOUNDS</topic><topic>PHASE TRANSFORMATIONS</topic><topic>PHOTON EMISSION</topic><topic>PHYSICAL PROPERTIES</topic><topic>POWDERS</topic><topic>RADIATIONS</topic><topic>RAMAN SPECTRA</topic><topic>RARE EARTHS</topic><topic>SCATTERING</topic><topic>SILICATES</topic><topic>SILICON COMPOUNDS</topic><topic>SOLID SOLUTIONS</topic><topic>SOLUTIONS</topic><topic>SORPTION</topic><topic>SPECTRA</topic><topic>X RADIATION</topic><topic>X-RAY DIFFRACTION</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>GLowacki, MichaL</creatorcontrib><creatorcontrib>Dominiak-Dzik, Grazyna</creatorcontrib><creatorcontrib>Ryba-Romanowski, Witold</creatorcontrib><creatorcontrib>Lisiecki, RadosLaw</creatorcontrib><creatorcontrib>Strzep, Adam</creatorcontrib><creatorcontrib>Runka, Tomasz</creatorcontrib><creatorcontrib>Drozdowski, MirosLaw</creatorcontrib><creatorcontrib>Domukhovski, Viktor</creatorcontrib><creatorcontrib>Diduszko, Ryszard</creatorcontrib><creatorcontrib>Institute of Electronic Materials Technology, ul. Wolczynska 133, 01-919 Warsaw</creatorcontrib><creatorcontrib>Berkowski, Marek</creatorcontrib><collection>OSTI.GOV</collection><jtitle>Journal of solid state chemistry</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>GLowacki, MichaL</au><au>Dominiak-Dzik, Grazyna</au><au>Ryba-Romanowski, Witold</au><au>Lisiecki, RadosLaw</au><au>Strzep, Adam</au><au>Runka, Tomasz</au><au>Drozdowski, MirosLaw</au><au>Domukhovski, Viktor</au><au>Diduszko, Ryszard</au><au>Institute of Electronic Materials Technology, ul. Wolczynska 133, 01-919 Warsaw</au><au>Berkowski, Marek</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Growth conditions, structure, Raman characterization and optical properties of Sm-doped (Lu{sub x}Gd{sub 1-x}){sub 2}SiO{sub 5} single crystals grown by the Czochralski method</atitle><jtitle>Journal of solid state chemistry</jtitle><date>2012-02-15</date><risdate>2012</risdate><volume>186</volume><issn>0022-4596</issn><eissn>1095-726X</eissn><abstract><![CDATA[The (Lu{sub x}Gd{sub 0.995-x}Sm{sub 0.005}){sub 2}SiO{sub 5} single crystals with x=0.095, 0.11, 0.15, 0.17, 0.19 0.35 and 0.5 were grown by the Czochralski method. Structural properties were investigated by X-ray diffraction measurements. Unit cell parameters and cell volume were determined by the Rietveld refinement of the collected X-ray powder spectra. The segregation features between Gd and Lu were estimated and analyzed. Vibrational properties of the solid solutions were analyzed on the basis of polarized Raman spectra acquired at 300-875 K temperature range. Absorption and emission spectra of Sm{sup 3+} ion in the crystals with different composition were analyzed in the terms of dopant energy levels, oscillator strengths of transitions and spectral features of luminescence bands in the visible range. Both structural and optical investigations revealed that change of Lu{sup 3+} content in (Lu{sub x}Gd{sub 0.995-x}Sm{sub 0.005}){sub 2}SiO{sub 5} solid solution crystals induces the phase transition from C2/c (Lu{sub 2}SiO{sub 5}) to P2{sub 1}/c (Gd{sub 2}SiO{sub 5}) structure. It was found that the break of LSO to GSO-type structure occurs at 0.15<x<0.17. - Graphical abstract: Single crystals of Sm{sup 3+}-doped (Lu{sub x}Gd{sub 1-x}){sub 2}SiO{sub 5} solid solutions have been grown by Czochralski method and characterized by various techniques. Crystal structure changes from C2/c to P2{sub 1}/c for composition with 0.15<x<0.17. Change of crystal structure causes changes in emission spectra. Highlights: Black-Right-Pointing-Pointer The (Lu{sub x}Gd{sub 1-x}){sub 2}SiO{sub 5} crystals are an alternative to LSO and GSO hosts for applications. Black-Right-Pointing-Pointer The break of the P2{sub 1}/c to C2/c structure in (Lu{sub x}Gd{sub 1-x}){sub 2}SiO{sub 5}:Sm occurs for 0.15<x<0.17. Black-Right-Pointing-Pointer Temperature-induced phase transition from C2/c to P2{sub 1}/c up to 875 K was not observed. Black-Right-Pointing-Pointer Observed significant changes of emission spectra caused by P2{sub 1}/c to C2/c structural transition.]]></abstract><cop>United States</cop><doi>10.1016/j.jssc.2011.12.021</doi></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0022-4596 |
| ispartof | Journal of solid state chemistry, 2012-02, Vol.186 |
| issn | 0022-4596 1095-726X |
| language | eng |
| recordid | cdi_osti_scitechconnect_21612922 |
| source | Elsevier ScienceDirect Journals Complete |
| subjects | ABSORPTION COHERENT SCATTERING CRYSTAL GROWTH METHODS CRYSTAL LATTICES CRYSTAL STRUCTURE CRYSTALS CZOCHRALSKI METHOD DIFFRACTION DISPERSIONS DOPED MATERIALS ELECTROMAGNETIC RADIATION ELEMENTS EMISSION EMISSION SPECTRA ENERGY LEVELS HOMOGENEOUS MIXTURES INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY IONIZING RADIATIONS LUMINESCENCE MATERIALS METALS MIXTURES MONOCLINIC LATTICES MONOCRYSTALS OPTICAL PROPERTIES OSCILLATOR STRENGTHS OXYGEN COMPOUNDS PHASE TRANSFORMATIONS PHOTON EMISSION PHYSICAL PROPERTIES POWDERS RADIATIONS RAMAN SPECTRA RARE EARTHS SCATTERING SILICATES SILICON COMPOUNDS SOLID SOLUTIONS SOLUTIONS SORPTION SPECTRA X RADIATION X-RAY DIFFRACTION |
| title | Growth conditions, structure, Raman characterization and optical properties of Sm-doped (Lu{sub x}Gd{sub 1-x}){sub 2}SiO{sub 5} single crystals grown by the Czochralski method |
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