Photoluminescence Polarization Anisotropy in a Single Heterostructured III-V Nanowire with Mixed Crystal Phases
Low temperature (10 K) micro-photoluminescence ( mu -PL) of single GaAs/AlGaAs core-shell nanowires with single GaAsSb inserts were measured. The PL emission from the zinc blende GaAsSb insert is strongly polarized along the nanowire axis while the PL emission from the wurtzite GaAs nanowire is perp...
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creator | Moses, A F Hoang, T B Ahtapodov, L Dheeraj, D L van Helvoort, ATJ Fimland, BO Weman, H |
description | Low temperature (10 K) micro-photoluminescence ( mu -PL) of single GaAs/AlGaAs core-shell nanowires with single GaAsSb inserts were measured. The PL emission from the zinc blende GaAsSb insert is strongly polarized along the nanowire axis while the PL emission from the wurtzite GaAs nanowire is perpendiculary polarized to the nanowire axis. The result indicates that the crystal phase, through the optical selection rules, has significant effect on the polarization of the PL from NWs besides the dielectric mismatch. The analysis of the PL results based on the electronic structure of these nanowires supports the correlation between the crystal phase and the PL emission. |
doi_str_mv | 10.1063/1.3666502 |
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The PL emission from the zinc blende GaAsSb insert is strongly polarized along the nanowire axis while the PL emission from the wurtzite GaAs nanowire is perpendiculary polarized to the nanowire axis. The result indicates that the crystal phase, through the optical selection rules, has significant effect on the polarization of the PL from NWs besides the dielectric mismatch. The analysis of the PL results based on the electronic structure of these nanowires supports the correlation between the crystal phase and the PL emission.</description><identifier>ISSN: 0094-243X</identifier><identifier>ISBN: 073541002X</identifier><identifier>ISBN: 9780735410022</identifier><identifier>EISSN: 1551-7616</identifier><identifier>DOI: 10.1063/1.3666502</identifier><language>eng</language><publisher>United States</publisher><subject>ALUMINIUM ARSENIDES ; ALUMINIUM COMPOUNDS ; Aluminum gallium arsenides ; ANISOTROPY ; ARSENIC COMPOUNDS ; ARSENIDES ; CHALCOGENIDES ; CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ; CORRELATIONS ; CRYSTAL GROWTH ; CRYSTAL GROWTH METHODS ; CRYSTALS ; DIELECTRIC MATERIALS ; ELECTRONIC STRUCTURE ; EMISSION ; EPITAXY ; Gallium arsenide ; GALLIUM ARSENIDES ; GALLIUM COMPOUNDS ; INORGANIC PHOSPHORS ; INTERFACES ; LUMINESCENCE ; MATERIALS ; MOLECULAR BEAM EPITAXY ; Nanocomposites ; Nanomaterials ; NANOSCIENCE AND NANOTECHNOLOGY ; Nanostructure ; NANOSTRUCTURES ; Nanowires ; Phases ; PHOSPHORS ; PHOTOLUMINESCENCE ; PHOTON EMISSION ; PNICTIDES ; POLARIZATION ; QUANTUM WIRES ; SELECTION RULES ; SULFIDES ; SULFUR COMPOUNDS ; ZINC COMPOUNDS ; ZINC SULFIDES</subject><ispartof>AIP conference proceedings, 2012-11, Vol.1399 (1)</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,314,776,780,881,27901,27902</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/21612419$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Moses, A F</creatorcontrib><creatorcontrib>Hoang, T B</creatorcontrib><creatorcontrib>Ahtapodov, L</creatorcontrib><creatorcontrib>Dheeraj, D L</creatorcontrib><creatorcontrib>van Helvoort, ATJ</creatorcontrib><creatorcontrib>Fimland, BO</creatorcontrib><creatorcontrib>Weman, H</creatorcontrib><title>Photoluminescence Polarization Anisotropy in a Single Heterostructured III-V Nanowire with Mixed Crystal Phases</title><title>AIP conference proceedings</title><description>Low temperature (10 K) micro-photoluminescence ( mu -PL) of single GaAs/AlGaAs core-shell nanowires with single GaAsSb inserts were measured. 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The analysis of the PL results based on the electronic structure of these nanowires supports the correlation between the crystal phase and the PL emission.</description><subject>ALUMINIUM ARSENIDES</subject><subject>ALUMINIUM COMPOUNDS</subject><subject>Aluminum gallium arsenides</subject><subject>ANISOTROPY</subject><subject>ARSENIC COMPOUNDS</subject><subject>ARSENIDES</subject><subject>CHALCOGENIDES</subject><subject>CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY</subject><subject>CORRELATIONS</subject><subject>CRYSTAL GROWTH</subject><subject>CRYSTAL GROWTH METHODS</subject><subject>CRYSTALS</subject><subject>DIELECTRIC MATERIALS</subject><subject>ELECTRONIC STRUCTURE</subject><subject>EMISSION</subject><subject>EPITAXY</subject><subject>Gallium arsenide</subject><subject>GALLIUM ARSENIDES</subject><subject>GALLIUM COMPOUNDS</subject><subject>INORGANIC PHOSPHORS</subject><subject>INTERFACES</subject><subject>LUMINESCENCE</subject><subject>MATERIALS</subject><subject>MOLECULAR BEAM EPITAXY</subject><subject>Nanocomposites</subject><subject>Nanomaterials</subject><subject>NANOSCIENCE AND NANOTECHNOLOGY</subject><subject>Nanostructure</subject><subject>NANOSTRUCTURES</subject><subject>Nanowires</subject><subject>Phases</subject><subject>PHOSPHORS</subject><subject>PHOTOLUMINESCENCE</subject><subject>PHOTON EMISSION</subject><subject>PNICTIDES</subject><subject>POLARIZATION</subject><subject>QUANTUM WIRES</subject><subject>SELECTION RULES</subject><subject>SULFIDES</subject><subject>SULFUR COMPOUNDS</subject><subject>ZINC COMPOUNDS</subject><subject>ZINC SULFIDES</subject><issn>0094-243X</issn><issn>1551-7616</issn><isbn>073541002X</isbn><isbn>9780735410022</isbn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2012</creationdate><recordtype>article</recordtype><recordid>eNqFkUtLAzEUhYMPsNYu_AcBN26m5k4ySbMsRW2hasEH3ZU0c8dGpolOMtT66x2oe-_mLM7H4XIOIZfAhsAkv4Ehl1IWLD8iPSgKyJQEeUzOmeKFAMby5QnpMaZFlgu-PCODGD9Yd1rqzuyRsNiEFOp26zxGi94iXYTaNO7HJBc8HXsXQ2rC5546Tw19dv69RjrFhE2IqWltahss6Ww2y97oo_Fh5xqkO5c29MF9d86k2cdkarrYmIjxgpxWpo44-NM-eb27fZlMs_nT_WwynmchFzplwAsrjMorbQtdIRouWFEpVZUl5iiZ1WulqzVoLNe25NxWzHQ9AFOFkCME3idXh9zuSbeK1iW0Gxu8R5tWOUjIBeiOuj5Qn034ajGm1dZ1LdS18RjauAKlGBdKcvgfFWKkYDTqRvkFyqN6lA</recordid><startdate>20121123</startdate><enddate>20121123</enddate><creator>Moses, A F</creator><creator>Hoang, T B</creator><creator>Ahtapodov, L</creator><creator>Dheeraj, D L</creator><creator>van Helvoort, ATJ</creator><creator>Fimland, BO</creator><creator>Weman, H</creator><scope>7U5</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><scope>OTOTI</scope></search><sort><creationdate>20121123</creationdate><title>Photoluminescence Polarization Anisotropy in a Single Heterostructured III-V Nanowire with Mixed Crystal Phases</title><author>Moses, A F ; Hoang, T B ; Ahtapodov, L ; Dheeraj, D L ; van Helvoort, ATJ ; Fimland, BO ; Weman, H</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-o249t-135c4a72f9c59feea3405f77fdde2e60c9b79fb19edbcd33cf0a6661075468e13</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2012</creationdate><topic>ALUMINIUM ARSENIDES</topic><topic>ALUMINIUM COMPOUNDS</topic><topic>Aluminum gallium arsenides</topic><topic>ANISOTROPY</topic><topic>ARSENIC COMPOUNDS</topic><topic>ARSENIDES</topic><topic>CHALCOGENIDES</topic><topic>CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY</topic><topic>CORRELATIONS</topic><topic>CRYSTAL GROWTH</topic><topic>CRYSTAL GROWTH METHODS</topic><topic>CRYSTALS</topic><topic>DIELECTRIC MATERIALS</topic><topic>ELECTRONIC STRUCTURE</topic><topic>EMISSION</topic><topic>EPITAXY</topic><topic>Gallium arsenide</topic><topic>GALLIUM ARSENIDES</topic><topic>GALLIUM COMPOUNDS</topic><topic>INORGANIC PHOSPHORS</topic><topic>INTERFACES</topic><topic>LUMINESCENCE</topic><topic>MATERIALS</topic><topic>MOLECULAR BEAM EPITAXY</topic><topic>Nanocomposites</topic><topic>Nanomaterials</topic><topic>NANOSCIENCE AND NANOTECHNOLOGY</topic><topic>Nanostructure</topic><topic>NANOSTRUCTURES</topic><topic>Nanowires</topic><topic>Phases</topic><topic>PHOSPHORS</topic><topic>PHOTOLUMINESCENCE</topic><topic>PHOTON EMISSION</topic><topic>PNICTIDES</topic><topic>POLARIZATION</topic><topic>QUANTUM WIRES</topic><topic>SELECTION RULES</topic><topic>SULFIDES</topic><topic>SULFUR COMPOUNDS</topic><topic>ZINC COMPOUNDS</topic><topic>ZINC SULFIDES</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Moses, A F</creatorcontrib><creatorcontrib>Hoang, T B</creatorcontrib><creatorcontrib>Ahtapodov, L</creatorcontrib><creatorcontrib>Dheeraj, D L</creatorcontrib><creatorcontrib>van Helvoort, ATJ</creatorcontrib><creatorcontrib>Fimland, BO</creatorcontrib><creatorcontrib>Weman, H</creatorcontrib><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>OSTI.GOV</collection><jtitle>AIP conference proceedings</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Moses, A F</au><au>Hoang, T B</au><au>Ahtapodov, L</au><au>Dheeraj, D L</au><au>van Helvoort, ATJ</au><au>Fimland, BO</au><au>Weman, H</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Photoluminescence Polarization Anisotropy in a Single Heterostructured III-V Nanowire with Mixed Crystal Phases</atitle><jtitle>AIP conference proceedings</jtitle><date>2012-11-23</date><risdate>2012</risdate><volume>1399</volume><issue>1</issue><issn>0094-243X</issn><eissn>1551-7616</eissn><isbn>073541002X</isbn><isbn>9780735410022</isbn><abstract>Low temperature (10 K) micro-photoluminescence ( mu -PL) of single GaAs/AlGaAs core-shell nanowires with single GaAsSb inserts were measured. The PL emission from the zinc blende GaAsSb insert is strongly polarized along the nanowire axis while the PL emission from the wurtzite GaAs nanowire is perpendiculary polarized to the nanowire axis. The result indicates that the crystal phase, through the optical selection rules, has significant effect on the polarization of the PL from NWs besides the dielectric mismatch. The analysis of the PL results based on the electronic structure of these nanowires supports the correlation between the crystal phase and the PL emission.</abstract><cop>United States</cop><doi>10.1063/1.3666502</doi></addata></record> |
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subjects | ALUMINIUM ARSENIDES ALUMINIUM COMPOUNDS Aluminum gallium arsenides ANISOTROPY ARSENIC COMPOUNDS ARSENIDES CHALCOGENIDES CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY CORRELATIONS CRYSTAL GROWTH CRYSTAL GROWTH METHODS CRYSTALS DIELECTRIC MATERIALS ELECTRONIC STRUCTURE EMISSION EPITAXY Gallium arsenide GALLIUM ARSENIDES GALLIUM COMPOUNDS INORGANIC PHOSPHORS INTERFACES LUMINESCENCE MATERIALS MOLECULAR BEAM EPITAXY Nanocomposites Nanomaterials NANOSCIENCE AND NANOTECHNOLOGY Nanostructure NANOSTRUCTURES Nanowires Phases PHOSPHORS PHOTOLUMINESCENCE PHOTON EMISSION PNICTIDES POLARIZATION QUANTUM WIRES SELECTION RULES SULFIDES SULFUR COMPOUNDS ZINC COMPOUNDS ZINC SULFIDES |
title | Photoluminescence Polarization Anisotropy in a Single Heterostructured III-V Nanowire with Mixed Crystal Phases |
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