Effect of pressure in the growth reactor on the properties of the active region in the InGaN/GaN light-emitting diodes

Effect of pressure in the growth reactor on the properties of the active region in the InGaN/GaN light-emitting diodes

Effect of pressure in the reactor in the case of growth of active regions in the InGaN/GaN light-emitting diodes by the method of vapor-phase epitaxy from metalorganic compounds on their electroluminescent and structural properties has been studied. It is shown that, as pressure is increased, the In...

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Veröffentlicht in:Semiconductors 2010-01, Vol.44 (1), p.123-126
Hauptverfasser: Lundin, W. V., Zavarin, E. E., Sinitsyn, M. A., Sakharov, A. V., Usov, S. O., Nikolaev, A. E., Davydov, D. V., Cherkashin, N. A., Tsatsulnikov, A. F.
Format: Artikel
Sprache:eng
Schlagworte:
Analysis
CRYSTAL GROWTH METHODS
EFFICIENCY
ELECTROLUMINESCENCE
EMISSION
EPITAXY
Fabrication
GALLIUM COMPOUNDS
GALLIUM NITRIDES
LAYERS
LIGHT EMITTING DIODES
LUMINESCENCE
Magnetic Materials
Magnetism
MATERIALS SCIENCE
NITRIDES
NITROGEN COMPOUNDS
PHOTON EMISSION
Physics
Physics and Astronomy
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
Testing of Materials and Structures
Treatment
VAPOR PHASE EPITAXY
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Zusammenfassung:Effect of pressure in the reactor in the case of growth of active regions in the InGaN/GaN light-emitting diodes by the method of vapor-phase epitaxy from metalorganic compounds on their electroluminescent and structural properties has been studied. It is shown that, as pressure is increased, the InGaN layers become transformed from being continuous in the lateral direction to the layers of separate InGaN islands. This transformation affects both the emission efficiency and the dependence of efficiency on current.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782610010215