Influence of the method of synthesis on properties of cadmium telluride films synthesized in highly nonequilibrium conditions
The results of comparative studies of electrical and galvanomagnetic properties of cadmium telluride films are reported. The films were synthesized under highly nonequilibrium conditions by the methods of a thermal screen and a quasi-closed volume. The temperature dependences of the conductivity, Ha...
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| Veröffentlicht in: | Semiconductors (Woodbury, N.Y.) N.Y.), 2010-07, Vol.44 (7), p.946-948 |
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| container_end_page | 948 |
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| container_issue | 7 |
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| container_title | Semiconductors (Woodbury, N.Y.) |
| container_volume | 44 |
| creator | Belyaev, A. P. Rubets, V. P. Antipov, V. V. Eremina, E. O. |
| description | The results of comparative studies of electrical and galvanomagnetic properties of cadmium telluride films are reported. The films were synthesized under highly nonequilibrium conditions by the methods of a thermal screen and a quasi-closed volume. The temperature dependences of the conductivity, Hall coefficient, and effective Hall mobility are reported. As a result of experimental data, it is concluded that the method of a thermal screen favorably affects the stoichiometry of the composition and, thus, is conducive to obtaining films with a lower concentration of defects. |
| doi_str_mv | 10.1134/S1063782610070195 |
| format | Article |
| fullrecord | <record><control><sourceid>gale_osti_</sourceid><recordid>TN_cdi_osti_scitechconnect_21562255</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><galeid>A360994303</galeid><sourcerecordid>A360994303</sourcerecordid><originalsourceid>FETCH-LOGICAL-c355t-8eef172a6c38df952a6deafb15efa527a653ba1696f2901363cab56ca8b0fa8a3</originalsourceid><addsrcrecordid>eNp9kU1LxDAQhosouK7-AG8Bz12TZpO2x2XxY2HBg3oOaTrZZmmTNUkPK_jfTVnxIsgc5ut9hhkmy24JXhBCl_evBHNaVgUnGJeY1OwsmxFc45wvy_p8ijnNp_5ldhXCHmNCKracZV8bq_sRrALkNIodoAFi59opC0ebCsEE5Cw6eHcAHw2EqaVkO5hxQBH6fvSmBaRNP4Rf5BNaZCzqzK7rj8g6Cx-j6U3jJ0g525ponA3X2YWWfYCbHz_P3h8f3tbP-fblabNebXNFGYt5BaBJWUiuaNXqmqWoBakbwkBLVpSSM9pIwmuuixoTyqmSDeNKVg3WspJ0nt2d5roQjQjKRFBdWsOCiqIgjBcFY0m1OKl2sgdhrHbRS5WshcEkNaQbQawox3W9pJgmgJwA5V0IHrQ4eDNIfxQEi-kt4s9bElOcmJC0dgde7N3obbr-H-gbTRqSHg</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Influence of the method of synthesis on properties of cadmium telluride films synthesized in highly nonequilibrium conditions</title><source>SpringerLink Journals - AutoHoldings</source><creator>Belyaev, A. P. ; Rubets, V. P. ; Antipov, V. V. ; Eremina, E. O.</creator><creatorcontrib>Belyaev, A. P. ; Rubets, V. P. ; Antipov, V. V. ; Eremina, E. O.</creatorcontrib><description>The results of comparative studies of electrical and galvanomagnetic properties of cadmium telluride films are reported. The films were synthesized under highly nonequilibrium conditions by the methods of a thermal screen and a quasi-closed volume. The temperature dependences of the conductivity, Hall coefficient, and effective Hall mobility are reported. As a result of experimental data, it is concluded that the method of a thermal screen favorably affects the stoichiometry of the composition and, thus, is conducive to obtaining films with a lower concentration of defects.</description><identifier>ISSN: 1063-7826</identifier><identifier>EISSN: 1090-6479</identifier><identifier>DOI: 10.1134/S1063782610070195</identifier><language>eng</language><publisher>Dordrecht: SP MAIK Nauka/Interperiodica</publisher><subject>Analysis ; CADMIUM ; CHALCOGENIDES ; DEFECTS ; Electric properties ; ELEMENTS ; Fabrication ; Magnetic Materials ; Magnetism ; MATERIALS SCIENCE ; METALS ; Methods ; MOBILITY ; Physics ; Physics and Astronomy ; SCREENS ; STOICHIOMETRY ; SYNTHESIS ; TELLURIDES ; TELLURIUM COMPOUNDS ; TEMPERATURE DEPENDENCE ; Testing of Materials and Structures ; Treatment</subject><ispartof>Semiconductors (Woodbury, N.Y.), 2010-07, Vol.44 (7), p.946-948</ispartof><rights>Pleiades Publishing, Ltd. 2010</rights><rights>COPYRIGHT 2010 Springer</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c355t-8eef172a6c38df952a6deafb15efa527a653ba1696f2901363cab56ca8b0fa8a3</citedby></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1134/S1063782610070195$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1134/S1063782610070195$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>230,314,780,784,885,27923,27924,41487,42556,51318</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/21562255$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Belyaev, A. P.</creatorcontrib><creatorcontrib>Rubets, V. P.</creatorcontrib><creatorcontrib>Antipov, V. V.</creatorcontrib><creatorcontrib>Eremina, E. O.</creatorcontrib><title>Influence of the method of synthesis on properties of cadmium telluride films synthesized in highly nonequilibrium conditions</title><title>Semiconductors (Woodbury, N.Y.)</title><addtitle>Semiconductors</addtitle><description>The results of comparative studies of electrical and galvanomagnetic properties of cadmium telluride films are reported. The films were synthesized under highly nonequilibrium conditions by the methods of a thermal screen and a quasi-closed volume. The temperature dependences of the conductivity, Hall coefficient, and effective Hall mobility are reported. As a result of experimental data, it is concluded that the method of a thermal screen favorably affects the stoichiometry of the composition and, thus, is conducive to obtaining films with a lower concentration of defects.</description><subject>Analysis</subject><subject>CADMIUM</subject><subject>CHALCOGENIDES</subject><subject>DEFECTS</subject><subject>Electric properties</subject><subject>ELEMENTS</subject><subject>Fabrication</subject><subject>Magnetic Materials</subject><subject>Magnetism</subject><subject>MATERIALS SCIENCE</subject><subject>METALS</subject><subject>Methods</subject><subject>MOBILITY</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><subject>SCREENS</subject><subject>STOICHIOMETRY</subject><subject>SYNTHESIS</subject><subject>TELLURIDES</subject><subject>TELLURIUM COMPOUNDS</subject><subject>TEMPERATURE DEPENDENCE</subject><subject>Testing of Materials and Structures</subject><subject>Treatment</subject><issn>1063-7826</issn><issn>1090-6479</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2010</creationdate><recordtype>article</recordtype><recordid>eNp9kU1LxDAQhosouK7-AG8Bz12TZpO2x2XxY2HBg3oOaTrZZmmTNUkPK_jfTVnxIsgc5ut9hhkmy24JXhBCl_evBHNaVgUnGJeY1OwsmxFc45wvy_p8ijnNp_5ldhXCHmNCKracZV8bq_sRrALkNIodoAFi59opC0ebCsEE5Cw6eHcAHw2EqaVkO5hxQBH6fvSmBaRNP4Rf5BNaZCzqzK7rj8g6Cx-j6U3jJ0g525ponA3X2YWWfYCbHz_P3h8f3tbP-fblabNebXNFGYt5BaBJWUiuaNXqmqWoBakbwkBLVpSSM9pIwmuuixoTyqmSDeNKVg3WspJ0nt2d5roQjQjKRFBdWsOCiqIgjBcFY0m1OKl2sgdhrHbRS5WshcEkNaQbQawox3W9pJgmgJwA5V0IHrQ4eDNIfxQEi-kt4s9bElOcmJC0dgde7N3obbr-H-gbTRqSHg</recordid><startdate>20100701</startdate><enddate>20100701</enddate><creator>Belyaev, A. P.</creator><creator>Rubets, V. P.</creator><creator>Antipov, V. V.</creator><creator>Eremina, E. O.</creator><general>SP MAIK Nauka/Interperiodica</general><general>Springer</general><scope>AAYXX</scope><scope>CITATION</scope><scope>OTOTI</scope></search><sort><creationdate>20100701</creationdate><title>Influence of the method of synthesis on properties of cadmium telluride films synthesized in highly nonequilibrium conditions</title><author>Belyaev, A. P. ; Rubets, V. P. ; Antipov, V. V. ; Eremina, E. O.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c355t-8eef172a6c38df952a6deafb15efa527a653ba1696f2901363cab56ca8b0fa8a3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2010</creationdate><topic>Analysis</topic><topic>CADMIUM</topic><topic>CHALCOGENIDES</topic><topic>DEFECTS</topic><topic>Electric properties</topic><topic>ELEMENTS</topic><topic>Fabrication</topic><topic>Magnetic Materials</topic><topic>Magnetism</topic><topic>MATERIALS SCIENCE</topic><topic>METALS</topic><topic>Methods</topic><topic>MOBILITY</topic><topic>Physics</topic><topic>Physics and Astronomy</topic><topic>SCREENS</topic><topic>STOICHIOMETRY</topic><topic>SYNTHESIS</topic><topic>TELLURIDES</topic><topic>TELLURIUM COMPOUNDS</topic><topic>TEMPERATURE DEPENDENCE</topic><topic>Testing of Materials and Structures</topic><topic>Treatment</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Belyaev, A. P.</creatorcontrib><creatorcontrib>Rubets, V. P.</creatorcontrib><creatorcontrib>Antipov, V. V.</creatorcontrib><creatorcontrib>Eremina, E. O.</creatorcontrib><collection>CrossRef</collection><collection>OSTI.GOV</collection><jtitle>Semiconductors (Woodbury, N.Y.)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Belyaev, A. P.</au><au>Rubets, V. P.</au><au>Antipov, V. V.</au><au>Eremina, E. O.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Influence of the method of synthesis on properties of cadmium telluride films synthesized in highly nonequilibrium conditions</atitle><jtitle>Semiconductors (Woodbury, N.Y.)</jtitle><stitle>Semiconductors</stitle><date>2010-07-01</date><risdate>2010</risdate><volume>44</volume><issue>7</issue><spage>946</spage><epage>948</epage><pages>946-948</pages><issn>1063-7826</issn><eissn>1090-6479</eissn><abstract>The results of comparative studies of electrical and galvanomagnetic properties of cadmium telluride films are reported. The films were synthesized under highly nonequilibrium conditions by the methods of a thermal screen and a quasi-closed volume. The temperature dependences of the conductivity, Hall coefficient, and effective Hall mobility are reported. As a result of experimental data, it is concluded that the method of a thermal screen favorably affects the stoichiometry of the composition and, thus, is conducive to obtaining films with a lower concentration of defects.</abstract><cop>Dordrecht</cop><pub>SP MAIK Nauka/Interperiodica</pub><doi>10.1134/S1063782610070195</doi><tpages>3</tpages></addata></record> |
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| ispartof | Semiconductors (Woodbury, N.Y.), 2010-07, Vol.44 (7), p.946-948 |
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| source | SpringerLink Journals - AutoHoldings |
| subjects | Analysis CADMIUM CHALCOGENIDES DEFECTS Electric properties ELEMENTS Fabrication Magnetic Materials Magnetism MATERIALS SCIENCE METALS Methods MOBILITY Physics Physics and Astronomy SCREENS STOICHIOMETRY SYNTHESIS TELLURIDES TELLURIUM COMPOUNDS TEMPERATURE DEPENDENCE Testing of Materials and Structures Treatment |
| title | Influence of the method of synthesis on properties of cadmium telluride films synthesized in highly nonequilibrium conditions |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-11T17%3A55%3A47IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-gale_osti_&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Influence%20of%20the%20method%20of%20synthesis%20on%20properties%20of%20cadmium%20telluride%20films%20synthesized%20in%20highly%20nonequilibrium%20conditions&rft.jtitle=Semiconductors%20(Woodbury,%20N.Y.)&rft.au=Belyaev,%20A.%20P.&rft.date=2010-07-01&rft.volume=44&rft.issue=7&rft.spage=946&rft.epage=948&rft.pages=946-948&rft.issn=1063-7826&rft.eissn=1090-6479&rft_id=info:doi/10.1134/S1063782610070195&rft_dat=%3Cgale_osti_%3EA360994303%3C/gale_osti_%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_galeid=A360994303&rfr_iscdi=true |