Efficient photoelectric converters of ultraviolet radiation based on ZnS and CdS with low-resistivity surface layers
The formation of thin high- and low-resistivity layers in the space-charge region of Cu 1.8 S-CdS and Cu 1.8 S-ZnS surface-barrier photoconverter structures leads to a considerable increase in photosensitivity and a reduction in the dark tunneling-recombination currents. Highly efficient and stable...
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| Veröffentlicht in: | Semiconductors (Woodbury, N.Y.) N.Y.), 2010-08, Vol.44 (8), p.1080-1083 |
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| container_end_page | 1083 |
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| container_issue | 8 |
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| container_title | Semiconductors (Woodbury, N.Y.) |
| container_volume | 44 |
| creator | Bobrenko, Yu. N. Pavelets, S. Yu Pavelets, A. M. Kiselyuk, M. P. Yaroshenko, N. V. |
| description | The formation of thin high- and low-resistivity layers in the space-charge region of Cu
1.8
S-CdS and Cu
1.8
S-ZnS surface-barrier photoconverter structures leads to a considerable increase in photosensitivity and a reduction in the dark tunneling-recombination currents. Highly efficient and stable ultraviolet photoconverters based on CdS and ZnS were obtained, and their electrical and photoelectrical properties were studied. The main operational parameters of the photoconverters are reported. |
| doi_str_mv | 10.1134/S1063782610080221 |
| format | Article |
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1.8
S-CdS and Cu
1.8
S-ZnS surface-barrier photoconverter structures leads to a considerable increase in photosensitivity and a reduction in the dark tunneling-recombination currents. Highly efficient and stable ultraviolet photoconverters based on CdS and ZnS were obtained, and their electrical and photoelectrical properties were studied. The main operational parameters of the photoconverters are reported.</description><identifier>ISSN: 1063-7826</identifier><identifier>EISSN: 1090-6479</identifier><identifier>DOI: 10.1134/S1063782610080221</identifier><language>eng</language><publisher>Dordrecht: SP MAIK Nauka/Interperiodica</publisher><subject>CADMIUM COMPOUNDS ; CADMIUM SULFIDES ; CHALCOGENIDES ; CHEMICAL REACTIONS ; CURRENTS ; Electric properties ; ELECTROMAGNETIC RADIATION ; Electronics industry ; INORGANIC PHOSPHORS ; LAYERS ; Magnetic Materials ; Magnetism ; MATERIALS SCIENCE ; Nuclear radiation ; PHOSPHORS ; PHOTOSENSITIVITY ; Physics ; Physics and Astronomy ; Physics of Semiconductor Devices ; RADIATIONS ; RECOMBINATION ; REDUCTION ; SENSITIVITY ; SPACE CHARGE ; SULFIDES ; SULFUR COMPOUNDS ; SURFACES ; TUNNEL EFFECT ; ULTRAVIOLET RADIATION ; ZINC COMPOUNDS ; ZINC SULFIDES</subject><ispartof>Semiconductors (Woodbury, N.Y.), 2010-08, Vol.44 (8), p.1080-1083</ispartof><rights>Pleiades Publishing, Ltd. 2010</rights><rights>COPYRIGHT 2010 Springer</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c355t-2076a188e16e2f40e5e60b5d7a7128b97747185374dda43b211e388d6f3d96f13</citedby><cites>FETCH-LOGICAL-c355t-2076a188e16e2f40e5e60b5d7a7128b97747185374dda43b211e388d6f3d96f13</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1134/S1063782610080221$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1134/S1063782610080221$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>230,314,776,780,881,27901,27902,41464,42533,51294</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/21562234$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Bobrenko, Yu. N.</creatorcontrib><creatorcontrib>Pavelets, S. Yu</creatorcontrib><creatorcontrib>Pavelets, A. M.</creatorcontrib><creatorcontrib>Kiselyuk, M. P.</creatorcontrib><creatorcontrib>Yaroshenko, N. V.</creatorcontrib><title>Efficient photoelectric converters of ultraviolet radiation based on ZnS and CdS with low-resistivity surface layers</title><title>Semiconductors (Woodbury, N.Y.)</title><addtitle>Semiconductors</addtitle><description>The formation of thin high- and low-resistivity layers in the space-charge region of Cu
1.8
S-CdS and Cu
1.8
S-ZnS surface-barrier photoconverter structures leads to a considerable increase in photosensitivity and a reduction in the dark tunneling-recombination currents. Highly efficient and stable ultraviolet photoconverters based on CdS and ZnS were obtained, and their electrical and photoelectrical properties were studied. The main operational parameters of the photoconverters are reported.</description><subject>CADMIUM COMPOUNDS</subject><subject>CADMIUM SULFIDES</subject><subject>CHALCOGENIDES</subject><subject>CHEMICAL REACTIONS</subject><subject>CURRENTS</subject><subject>Electric properties</subject><subject>ELECTROMAGNETIC RADIATION</subject><subject>Electronics industry</subject><subject>INORGANIC PHOSPHORS</subject><subject>LAYERS</subject><subject>Magnetic Materials</subject><subject>Magnetism</subject><subject>MATERIALS SCIENCE</subject><subject>Nuclear radiation</subject><subject>PHOSPHORS</subject><subject>PHOTOSENSITIVITY</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><subject>Physics of Semiconductor Devices</subject><subject>RADIATIONS</subject><subject>RECOMBINATION</subject><subject>REDUCTION</subject><subject>SENSITIVITY</subject><subject>SPACE CHARGE</subject><subject>SULFIDES</subject><subject>SULFUR COMPOUNDS</subject><subject>SURFACES</subject><subject>TUNNEL EFFECT</subject><subject>ULTRAVIOLET RADIATION</subject><subject>ZINC COMPOUNDS</subject><subject>ZINC SULFIDES</subject><issn>1063-7826</issn><issn>1090-6479</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2010</creationdate><recordtype>article</recordtype><recordid>eNp9kU1LAzEQhhdR8PMHeAt4Xs0k2WT3KMUvEDxUL16WNJm0kTWRJK3035tSb4LkkCF5n2EepmkugV4DcHEzByq56pkESnvKGBw0J0AH2kqhhsNdLXm7-z9uTnP-oBSg78RJU-6c88ZjKORrFUvECU1J3hATwwZTwZRJdGQ9laQ3Pk5YSNLW6-JjIAud0ZJavIc50cGSmZ2Tb19WZIrfbcLsc_EbX7Ykr5PTBsmkt7XjeXPk9JTx4vc-a97u715nj-3zy8PT7Pa5NbzrSsuokhr6HkEic4Jih5IuOqu0AtYvBqWEqhZcCWu14AsGgLzvrXTcDtIBP2uu9n1jnWPMxhc0qyoWquPIoJOMcVFT1_vUUk84-uBidTX1WPz0NY3O1_dbLqkaJBdDBWAPmBRzTujGr-Q_ddqOQMfdNsY_26gM2zO5ZsMS0_gR1ylU-3-gHwxJjD4</recordid><startdate>20100801</startdate><enddate>20100801</enddate><creator>Bobrenko, Yu. 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1.8
S-CdS and Cu
1.8
S-ZnS surface-barrier photoconverter structures leads to a considerable increase in photosensitivity and a reduction in the dark tunneling-recombination currents. Highly efficient and stable ultraviolet photoconverters based on CdS and ZnS were obtained, and their electrical and photoelectrical properties were studied. The main operational parameters of the photoconverters are reported.</abstract><cop>Dordrecht</cop><pub>SP MAIK Nauka/Interperiodica</pub><doi>10.1134/S1063782610080221</doi><tpages>4</tpages></addata></record> |
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| subjects | CADMIUM COMPOUNDS CADMIUM SULFIDES CHALCOGENIDES CHEMICAL REACTIONS CURRENTS Electric properties ELECTROMAGNETIC RADIATION Electronics industry INORGANIC PHOSPHORS LAYERS Magnetic Materials Magnetism MATERIALS SCIENCE Nuclear radiation PHOSPHORS PHOTOSENSITIVITY Physics Physics and Astronomy Physics of Semiconductor Devices RADIATIONS RECOMBINATION REDUCTION SENSITIVITY SPACE CHARGE SULFIDES SULFUR COMPOUNDS SURFACES TUNNEL EFFECT ULTRAVIOLET RADIATION ZINC COMPOUNDS ZINC SULFIDES |
| title | Efficient photoelectric converters of ultraviolet radiation based on ZnS and CdS with low-resistivity surface layers |
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