Features of vanadium impurity states in lead telluride
Temperature dependences of resistivity, magnetic susceptibility, and charge-carrier concentration and mobility in single-crystalline PbTe:V samples with a varied impurity content are investigated. It is shown that vanadium forms a donor level located ∼20 meV below the conduction-band bottom. The ele...
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| Veröffentlicht in: | Semiconductors (Woodbury, N.Y.) N.Y.), 2010-12, Vol.44 (12), p.1543-1547 |
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| container_title | Semiconductors (Woodbury, N.Y.) |
| container_volume | 44 |
| creator | Artamkin, A. I. Dobrovolsky, A. A. Vinokurov, A. A. Zlomanov, V. P. Gavrilkin, S. Y. Ivanenko, O. M. Mitzen, K. V. Ryabova, L. I. Khokhlov, D. R. |
| description | Temperature dependences of resistivity, magnetic susceptibility, and charge-carrier concentration and mobility in single-crystalline PbTe:V samples with a varied impurity content are investigated. It is shown that vanadium forms a donor level located ∼20 meV below the conduction-band bottom. The electron mobility is as high as 10
5
cm
2
V
−1
s
−1
in the samples with
N
V
≤ 0.21 at % and proves to be more than an order of magnitude higher in the samples with the highest vanadium content
N
V
= 0.26 at %. In the same samples, the real part of the conductivity is characterized by a pronounced frequency dependence. An increase in vanadium concentration is accompanied by a decrease in the effective magnetic moment of impurity atoms. The features of electron transport in PbTe:V may be caused by a variable vanadium valence and by the effect of interimpurity correlations. |
| doi_str_mv | 10.1134/S106378261012002X |
| format | Article |
| fullrecord | <record><control><sourceid>gale_osti_</sourceid><recordid>TN_cdi_osti_scitechconnect_21562154</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><galeid>A360204879</galeid><sourcerecordid>A360204879</sourcerecordid><originalsourceid>FETCH-LOGICAL-c355t-b5b0eb021cff70c04942f64a021e5ee2c8e3437ffebf556e218766919586bc943</originalsourceid><addsrcrecordid>eNp9kE1Lw0AQhhdRsFZ_gLeA5-jsZ5JjKVaFggcVvIXNZrZuyUfZ3Qr9926IN0GGYYZ532dghpBbCveUcvHwRkHxomSKAmUA7POMLChUkCtRVOdTr3g-6ZfkKoQ9AKWlFAuiNqjj0WPIRpt960G37thnrj8cvYunLEQdk-aGrEPdZhG7LgktXpMLq7uAN791ST42j-_r53z7-vSyXm1zw6WMeSMbwAYYNdYWYEBUglkldJqgRGSmRC54YS02VkqFjJaFUhWtZKkaUwm-JHfz3jFEVwfjIpovMw4DmlgzKlXKyXU_u3a6w9oNdoxemxQt9i650bo0X3EFDERZVAmgM2D8GIJHWx-867U_1RTq6Z_1n38mhs1MSN5hh77ej0c_pOv_gX4AvJR1rA</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Features of vanadium impurity states in lead telluride</title><source>SpringerLink Journals - AutoHoldings</source><creator>Artamkin, A. I. ; Dobrovolsky, A. A. ; Vinokurov, A. A. ; Zlomanov, V. P. ; Gavrilkin, S. Y. ; Ivanenko, O. M. ; Mitzen, K. V. ; Ryabova, L. I. ; Khokhlov, D. R.</creator><creatorcontrib>Artamkin, A. I. ; Dobrovolsky, A. A. ; Vinokurov, A. A. ; Zlomanov, V. P. ; Gavrilkin, S. Y. ; Ivanenko, O. M. ; Mitzen, K. V. ; Ryabova, L. I. ; Khokhlov, D. R.</creatorcontrib><description>Temperature dependences of resistivity, magnetic susceptibility, and charge-carrier concentration and mobility in single-crystalline PbTe:V samples with a varied impurity content are investigated. It is shown that vanadium forms a donor level located ∼20 meV below the conduction-band bottom. The electron mobility is as high as 10
5
cm
2
V
−1
s
−1
in the samples with
N
V
≤ 0.21 at % and proves to be more than an order of magnitude higher in the samples with the highest vanadium content
N
V
= 0.26 at %. In the same samples, the real part of the conductivity is characterized by a pronounced frequency dependence. An increase in vanadium concentration is accompanied by a decrease in the effective magnetic moment of impurity atoms. The features of electron transport in PbTe:V may be caused by a variable vanadium valence and by the effect of interimpurity correlations.</description><identifier>ISSN: 1063-7826</identifier><identifier>EISSN: 1090-6479</identifier><identifier>DOI: 10.1134/S106378261012002X</identifier><language>eng</language><publisher>Dordrecht: SP MAIK Nauka/Interperiodica</publisher><subject>ATOMS ; CHALCOGENIDES ; CHARGE CARRIERS ; CORRELATIONS ; CRYSTALS ; Electric properties ; Electrical and Optical Properties of Semiconductors ; ELECTRON MOBILITY ; ELECTRONS ; ELEMENTARY PARTICLES ; ELEMENTS ; FERMIONS ; FREQUENCY DEPENDENCE ; IMPURITIES ; LEAD COMPOUNDS ; LEAD TELLURIDES ; LEPTONS ; Magnetic Materials ; MAGNETIC MOMENTS ; MAGNETIC PROPERTIES ; MAGNETIC SUSCEPTIBILITY ; Magnetism ; MATERIALS SCIENCE ; METALS ; MOBILITY ; MONOCRYSTALS ; PARTICLE MOBILITY ; PHYSICAL PROPERTIES ; Physics ; Physics and Astronomy ; TELLURIDES ; TELLURIUM COMPOUNDS ; TEMPERATURE DEPENDENCE ; TRANSITION ELEMENTS ; VANADIUM</subject><ispartof>Semiconductors (Woodbury, N.Y.), 2010-12, Vol.44 (12), p.1543-1547</ispartof><rights>Pleiades Publishing, Ltd. 2010</rights><rights>COPYRIGHT 2010 Springer</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c355t-b5b0eb021cff70c04942f64a021e5ee2c8e3437ffebf556e218766919586bc943</citedby><cites>FETCH-LOGICAL-c355t-b5b0eb021cff70c04942f64a021e5ee2c8e3437ffebf556e218766919586bc943</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1134/S106378261012002X$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1134/S106378261012002X$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>230,314,776,780,881,27901,27902,41464,42533,51294</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/21562154$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Artamkin, A. I.</creatorcontrib><creatorcontrib>Dobrovolsky, A. A.</creatorcontrib><creatorcontrib>Vinokurov, A. A.</creatorcontrib><creatorcontrib>Zlomanov, V. P.</creatorcontrib><creatorcontrib>Gavrilkin, S. Y.</creatorcontrib><creatorcontrib>Ivanenko, O. M.</creatorcontrib><creatorcontrib>Mitzen, K. V.</creatorcontrib><creatorcontrib>Ryabova, L. I.</creatorcontrib><creatorcontrib>Khokhlov, D. R.</creatorcontrib><title>Features of vanadium impurity states in lead telluride</title><title>Semiconductors (Woodbury, N.Y.)</title><addtitle>Semiconductors</addtitle><description>Temperature dependences of resistivity, magnetic susceptibility, and charge-carrier concentration and mobility in single-crystalline PbTe:V samples with a varied impurity content are investigated. It is shown that vanadium forms a donor level located ∼20 meV below the conduction-band bottom. The electron mobility is as high as 10
5
cm
2
V
−1
s
−1
in the samples with
N
V
≤ 0.21 at % and proves to be more than an order of magnitude higher in the samples with the highest vanadium content
N
V
= 0.26 at %. In the same samples, the real part of the conductivity is characterized by a pronounced frequency dependence. An increase in vanadium concentration is accompanied by a decrease in the effective magnetic moment of impurity atoms. The features of electron transport in PbTe:V may be caused by a variable vanadium valence and by the effect of interimpurity correlations.</description><subject>ATOMS</subject><subject>CHALCOGENIDES</subject><subject>CHARGE CARRIERS</subject><subject>CORRELATIONS</subject><subject>CRYSTALS</subject><subject>Electric properties</subject><subject>Electrical and Optical Properties of Semiconductors</subject><subject>ELECTRON MOBILITY</subject><subject>ELECTRONS</subject><subject>ELEMENTARY PARTICLES</subject><subject>ELEMENTS</subject><subject>FERMIONS</subject><subject>FREQUENCY DEPENDENCE</subject><subject>IMPURITIES</subject><subject>LEAD COMPOUNDS</subject><subject>LEAD TELLURIDES</subject><subject>LEPTONS</subject><subject>Magnetic Materials</subject><subject>MAGNETIC MOMENTS</subject><subject>MAGNETIC PROPERTIES</subject><subject>MAGNETIC SUSCEPTIBILITY</subject><subject>Magnetism</subject><subject>MATERIALS SCIENCE</subject><subject>METALS</subject><subject>MOBILITY</subject><subject>MONOCRYSTALS</subject><subject>PARTICLE MOBILITY</subject><subject>PHYSICAL PROPERTIES</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><subject>TELLURIDES</subject><subject>TELLURIUM COMPOUNDS</subject><subject>TEMPERATURE DEPENDENCE</subject><subject>TRANSITION ELEMENTS</subject><subject>VANADIUM</subject><issn>1063-7826</issn><issn>1090-6479</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2010</creationdate><recordtype>article</recordtype><recordid>eNp9kE1Lw0AQhhdRsFZ_gLeA5-jsZ5JjKVaFggcVvIXNZrZuyUfZ3Qr9926IN0GGYYZ532dghpBbCveUcvHwRkHxomSKAmUA7POMLChUkCtRVOdTr3g-6ZfkKoQ9AKWlFAuiNqjj0WPIRpt960G37thnrj8cvYunLEQdk-aGrEPdZhG7LgktXpMLq7uAN791ST42j-_r53z7-vSyXm1zw6WMeSMbwAYYNdYWYEBUglkldJqgRGSmRC54YS02VkqFjJaFUhWtZKkaUwm-JHfz3jFEVwfjIpovMw4DmlgzKlXKyXU_u3a6w9oNdoxemxQt9i650bo0X3EFDERZVAmgM2D8GIJHWx-867U_1RTq6Z_1n38mhs1MSN5hh77ej0c_pOv_gX4AvJR1rA</recordid><startdate>20101201</startdate><enddate>20101201</enddate><creator>Artamkin, A. I.</creator><creator>Dobrovolsky, A. A.</creator><creator>Vinokurov, A. A.</creator><creator>Zlomanov, V. P.</creator><creator>Gavrilkin, S. Y.</creator><creator>Ivanenko, O. M.</creator><creator>Mitzen, K. V.</creator><creator>Ryabova, L. I.</creator><creator>Khokhlov, D. R.</creator><general>SP MAIK Nauka/Interperiodica</general><general>Springer</general><scope>AAYXX</scope><scope>CITATION</scope><scope>OTOTI</scope></search><sort><creationdate>20101201</creationdate><title>Features of vanadium impurity states in lead telluride</title><author>Artamkin, A. I. ; Dobrovolsky, A. A. ; Vinokurov, A. A. ; Zlomanov, V. P. ; Gavrilkin, S. Y. ; Ivanenko, O. M. ; Mitzen, K. V. ; Ryabova, L. I. ; Khokhlov, D. R.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c355t-b5b0eb021cff70c04942f64a021e5ee2c8e3437ffebf556e218766919586bc943</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2010</creationdate><topic>ATOMS</topic><topic>CHALCOGENIDES</topic><topic>CHARGE CARRIERS</topic><topic>CORRELATIONS</topic><topic>CRYSTALS</topic><topic>Electric properties</topic><topic>Electrical and Optical Properties of Semiconductors</topic><topic>ELECTRON MOBILITY</topic><topic>ELECTRONS</topic><topic>ELEMENTARY PARTICLES</topic><topic>ELEMENTS</topic><topic>FERMIONS</topic><topic>FREQUENCY DEPENDENCE</topic><topic>IMPURITIES</topic><topic>LEAD COMPOUNDS</topic><topic>LEAD TELLURIDES</topic><topic>LEPTONS</topic><topic>Magnetic Materials</topic><topic>MAGNETIC MOMENTS</topic><topic>MAGNETIC PROPERTIES</topic><topic>MAGNETIC SUSCEPTIBILITY</topic><topic>Magnetism</topic><topic>MATERIALS SCIENCE</topic><topic>METALS</topic><topic>MOBILITY</topic><topic>MONOCRYSTALS</topic><topic>PARTICLE MOBILITY</topic><topic>PHYSICAL PROPERTIES</topic><topic>Physics</topic><topic>Physics and Astronomy</topic><topic>TELLURIDES</topic><topic>TELLURIUM COMPOUNDS</topic><topic>TEMPERATURE DEPENDENCE</topic><topic>TRANSITION ELEMENTS</topic><topic>VANADIUM</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Artamkin, A. I.</creatorcontrib><creatorcontrib>Dobrovolsky, A. A.</creatorcontrib><creatorcontrib>Vinokurov, A. A.</creatorcontrib><creatorcontrib>Zlomanov, V. P.</creatorcontrib><creatorcontrib>Gavrilkin, S. Y.</creatorcontrib><creatorcontrib>Ivanenko, O. M.</creatorcontrib><creatorcontrib>Mitzen, K. V.</creatorcontrib><creatorcontrib>Ryabova, L. I.</creatorcontrib><creatorcontrib>Khokhlov, D. R.</creatorcontrib><collection>CrossRef</collection><collection>OSTI.GOV</collection><jtitle>Semiconductors (Woodbury, N.Y.)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Artamkin, A. I.</au><au>Dobrovolsky, A. A.</au><au>Vinokurov, A. A.</au><au>Zlomanov, V. P.</au><au>Gavrilkin, S. Y.</au><au>Ivanenko, O. M.</au><au>Mitzen, K. V.</au><au>Ryabova, L. I.</au><au>Khokhlov, D. R.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Features of vanadium impurity states in lead telluride</atitle><jtitle>Semiconductors (Woodbury, N.Y.)</jtitle><stitle>Semiconductors</stitle><date>2010-12-01</date><risdate>2010</risdate><volume>44</volume><issue>12</issue><spage>1543</spage><epage>1547</epage><pages>1543-1547</pages><issn>1063-7826</issn><eissn>1090-6479</eissn><abstract>Temperature dependences of resistivity, magnetic susceptibility, and charge-carrier concentration and mobility in single-crystalline PbTe:V samples with a varied impurity content are investigated. It is shown that vanadium forms a donor level located ∼20 meV below the conduction-band bottom. The electron mobility is as high as 10
5
cm
2
V
−1
s
−1
in the samples with
N
V
≤ 0.21 at % and proves to be more than an order of magnitude higher in the samples with the highest vanadium content
N
V
= 0.26 at %. In the same samples, the real part of the conductivity is characterized by a pronounced frequency dependence. An increase in vanadium concentration is accompanied by a decrease in the effective magnetic moment of impurity atoms. The features of electron transport in PbTe:V may be caused by a variable vanadium valence and by the effect of interimpurity correlations.</abstract><cop>Dordrecht</cop><pub>SP MAIK Nauka/Interperiodica</pub><doi>10.1134/S106378261012002X</doi><tpages>5</tpages></addata></record> |
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| source | SpringerLink Journals - AutoHoldings |
| subjects | ATOMS CHALCOGENIDES CHARGE CARRIERS CORRELATIONS CRYSTALS Electric properties Electrical and Optical Properties of Semiconductors ELECTRON MOBILITY ELECTRONS ELEMENTARY PARTICLES ELEMENTS FERMIONS FREQUENCY DEPENDENCE IMPURITIES LEAD COMPOUNDS LEAD TELLURIDES LEPTONS Magnetic Materials MAGNETIC MOMENTS MAGNETIC PROPERTIES MAGNETIC SUSCEPTIBILITY Magnetism MATERIALS SCIENCE METALS MOBILITY MONOCRYSTALS PARTICLE MOBILITY PHYSICAL PROPERTIES Physics Physics and Astronomy TELLURIDES TELLURIUM COMPOUNDS TEMPERATURE DEPENDENCE TRANSITION ELEMENTS VANADIUM |
| title | Features of vanadium impurity states in lead telluride |
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