Effects of spontaneous polarization on GaInN/GaN quantum well structures
Using electron beam irradiation, cathodoluminescence, and photoluminescence under ultrahigh vacuum conditions, we study the effect of spontaneous polarization on polar (0001) and nonpolar ( 1 1 − 00 ) GaInN/GaN quantum well structures. We use cathodoluminescence measurements with an electron beam ir...
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| Veröffentlicht in: | Journal of applied physics 2011-06, Vol.109 (12), p.123710-123710-9 |
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| creator | Thomsen, M. Jönen, H. Rossow, U. Hangleiter, A. |
| description | Using electron beam irradiation, cathodoluminescence, and photoluminescence under ultrahigh vacuum conditions, we study the effect of spontaneous polarization on polar (0001) and nonpolar (
1
1
−
00
) GaInN/GaN quantum well structures. We use cathodoluminescence measurements with an electron beam irradiation time of up to several hours. A drastic blueshift of the quantum well emission accompanied by a 100-fold increase of intensity is observed in polar samples. These changes can be described by an activation of the spontaneous polarization field due to the desorption of surface charges, which counteracts the piezoelectric field in the quantum well. Etching or annealing of the surface leads to similar effects. The influence of the sample structure was investigated by varying the cap thickness of the samples. A different time- dependent behavior of changes in the quantum well emission energy and the intensity depending on cap thickness and acceleration voltage was observed. This can be explained by de-screening and screening effects induced by the electron beam which are discussed in detail. For nonpolar (
1
1
−
00
) samples, no change in quantum well emission energy or intensity was observed. This is consistent with a spontaneous-polarization-induced surface field in the c-plane case and verifies the absence of the spontaneous polarization field in the nonpolar (
1
1
−
00
) direction. |
| doi_str_mv | 10.1063/1.3600221 |
| format | Article |
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1
1
−
00
) GaInN/GaN quantum well structures. We use cathodoluminescence measurements with an electron beam irradiation time of up to several hours. A drastic blueshift of the quantum well emission accompanied by a 100-fold increase of intensity is observed in polar samples. These changes can be described by an activation of the spontaneous polarization field due to the desorption of surface charges, which counteracts the piezoelectric field in the quantum well. Etching or annealing of the surface leads to similar effects. The influence of the sample structure was investigated by varying the cap thickness of the samples. A different time- dependent behavior of changes in the quantum well emission energy and the intensity depending on cap thickness and acceleration voltage was observed. This can be explained by de-screening and screening effects induced by the electron beam which are discussed in detail. For nonpolar (
1
1
−
00
) samples, no change in quantum well emission energy or intensity was observed. This is consistent with a spontaneous-polarization-induced surface field in the c-plane case and verifies the absence of the spontaneous polarization field in the nonpolar (
1
1
−
00
) direction.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.3600221</identifier><identifier>CODEN: JAPIAU</identifier><language>eng</language><publisher>United States: American Institute of Physics</publisher><subject>ANNEALING ; BEAMS ; CATHODOLUMINESCENCE ; CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ; DESORPTION ; DIMENSIONS ; ELECTRIC POTENTIAL ; ELECTRICITY ; ELECTRON BEAMS ; EMISSION ; GALLIUM COMPOUNDS ; GALLIUM NITRIDES ; HEAT TREATMENTS ; INDIUM COMPOUNDS ; LEPTON BEAMS ; LUMINESCENCE ; MATERIALS ; NANOSTRUCTURES ; NITRIDES ; NITROGEN COMPOUNDS ; PARTICLE BEAMS ; PHOTOLUMINESCENCE ; PHOTON EMISSION ; PIEZOELECTRICITY ; PNICTIDES ; POLARIZATION ; QUANTUM WELLS ; SEMICONDUCTOR MATERIALS ; SORPTION ; SPECTRAL SHIFT ; STRESSES ; SURFACES ; THICKNESS ; TIME DEPENDENCE</subject><ispartof>Journal of applied physics, 2011-06, Vol.109 (12), p.123710-123710-9</ispartof><rights>2011 American Institute of Physics</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c378t-cbadd817a762bd20ce7cc4de0c168cec3953af624ffb29e2b960865708b0c2af3</citedby><cites>FETCH-LOGICAL-c378t-cbadd817a762bd20ce7cc4de0c168cec3953af624ffb29e2b960865708b0c2af3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/jap/article-lookup/doi/10.1063/1.3600221$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>230,314,780,784,794,885,1559,4512,27924,27925,76384,76390</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/21538448$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Thomsen, M.</creatorcontrib><creatorcontrib>Jönen, H.</creatorcontrib><creatorcontrib>Rossow, U.</creatorcontrib><creatorcontrib>Hangleiter, A.</creatorcontrib><title>Effects of spontaneous polarization on GaInN/GaN quantum well structures</title><title>Journal of applied physics</title><description>Using electron beam irradiation, cathodoluminescence, and photoluminescence under ultrahigh vacuum conditions, we study the effect of spontaneous polarization on polar (0001) and nonpolar (
1
1
−
00
) GaInN/GaN quantum well structures. We use cathodoluminescence measurements with an electron beam irradiation time of up to several hours. A drastic blueshift of the quantum well emission accompanied by a 100-fold increase of intensity is observed in polar samples. These changes can be described by an activation of the spontaneous polarization field due to the desorption of surface charges, which counteracts the piezoelectric field in the quantum well. Etching or annealing of the surface leads to similar effects. The influence of the sample structure was investigated by varying the cap thickness of the samples. A different time- dependent behavior of changes in the quantum well emission energy and the intensity depending on cap thickness and acceleration voltage was observed. This can be explained by de-screening and screening effects induced by the electron beam which are discussed in detail. For nonpolar (
1
1
−
00
) samples, no change in quantum well emission energy or intensity was observed. This is consistent with a spontaneous-polarization-induced surface field in the c-plane case and verifies the absence of the spontaneous polarization field in the nonpolar (
1
1
−
00
) direction.</description><subject>ANNEALING</subject><subject>BEAMS</subject><subject>CATHODOLUMINESCENCE</subject><subject>CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY</subject><subject>DESORPTION</subject><subject>DIMENSIONS</subject><subject>ELECTRIC POTENTIAL</subject><subject>ELECTRICITY</subject><subject>ELECTRON BEAMS</subject><subject>EMISSION</subject><subject>GALLIUM COMPOUNDS</subject><subject>GALLIUM NITRIDES</subject><subject>HEAT TREATMENTS</subject><subject>INDIUM COMPOUNDS</subject><subject>LEPTON BEAMS</subject><subject>LUMINESCENCE</subject><subject>MATERIALS</subject><subject>NANOSTRUCTURES</subject><subject>NITRIDES</subject><subject>NITROGEN COMPOUNDS</subject><subject>PARTICLE BEAMS</subject><subject>PHOTOLUMINESCENCE</subject><subject>PHOTON EMISSION</subject><subject>PIEZOELECTRICITY</subject><subject>PNICTIDES</subject><subject>POLARIZATION</subject><subject>QUANTUM WELLS</subject><subject>SEMICONDUCTOR MATERIALS</subject><subject>SORPTION</subject><subject>SPECTRAL SHIFT</subject><subject>STRESSES</subject><subject>SURFACES</subject><subject>THICKNESS</subject><subject>TIME DEPENDENCE</subject><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2011</creationdate><recordtype>article</recordtype><recordid>eNp1kE1LAzEURYMoWKsL_8GAKxfTviTzkdkIUmpbKHWj65B5k-DINKlJBtFf79Qp7oQHFx6HC_cQckthRqHgczrjBQBj9IxMKIgqLfMczslk-NFUVGV1Sa5CeAegVPBqQtZLYzTGkDiThIOzUVnt-pAcXKd8-61i62wy3Ept7G6-Urvko1c29vvkU3ddEqLvMfZeh2tyYVQX9M0pp-T1afmyWKfb59Vm8bhNkZciplirphG0VGXB6oYB6hIxazQgLQRq5FXOlSlYZkzNKs3qqgBR5CWIGpApw6fkbux1IbYyYBs1vqGzdlghGc25yDIxUPcjhd6F4LWRB9_ulf-SFORRlKTyJGpgH0b2WPY7-H_4ZEs6I_9s8R_e_XCQ</recordid><startdate>20110615</startdate><enddate>20110615</enddate><creator>Thomsen, M.</creator><creator>Jönen, H.</creator><creator>Rossow, U.</creator><creator>Hangleiter, A.</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>OTOTI</scope></search><sort><creationdate>20110615</creationdate><title>Effects of spontaneous polarization on GaInN/GaN quantum well structures</title><author>Thomsen, M. ; Jönen, H. ; Rossow, U. ; Hangleiter, A.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c378t-cbadd817a762bd20ce7cc4de0c168cec3953af624ffb29e2b960865708b0c2af3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2011</creationdate><topic>ANNEALING</topic><topic>BEAMS</topic><topic>CATHODOLUMINESCENCE</topic><topic>CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY</topic><topic>DESORPTION</topic><topic>DIMENSIONS</topic><topic>ELECTRIC POTENTIAL</topic><topic>ELECTRICITY</topic><topic>ELECTRON BEAMS</topic><topic>EMISSION</topic><topic>GALLIUM COMPOUNDS</topic><topic>GALLIUM NITRIDES</topic><topic>HEAT TREATMENTS</topic><topic>INDIUM COMPOUNDS</topic><topic>LEPTON BEAMS</topic><topic>LUMINESCENCE</topic><topic>MATERIALS</topic><topic>NANOSTRUCTURES</topic><topic>NITRIDES</topic><topic>NITROGEN COMPOUNDS</topic><topic>PARTICLE BEAMS</topic><topic>PHOTOLUMINESCENCE</topic><topic>PHOTON EMISSION</topic><topic>PIEZOELECTRICITY</topic><topic>PNICTIDES</topic><topic>POLARIZATION</topic><topic>QUANTUM WELLS</topic><topic>SEMICONDUCTOR MATERIALS</topic><topic>SORPTION</topic><topic>SPECTRAL SHIFT</topic><topic>STRESSES</topic><topic>SURFACES</topic><topic>THICKNESS</topic><topic>TIME DEPENDENCE</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Thomsen, M.</creatorcontrib><creatorcontrib>Jönen, H.</creatorcontrib><creatorcontrib>Rossow, U.</creatorcontrib><creatorcontrib>Hangleiter, A.</creatorcontrib><collection>CrossRef</collection><collection>OSTI.GOV</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Thomsen, M.</au><au>Jönen, H.</au><au>Rossow, U.</au><au>Hangleiter, A.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Effects of spontaneous polarization on GaInN/GaN quantum well structures</atitle><jtitle>Journal of applied physics</jtitle><date>2011-06-15</date><risdate>2011</risdate><volume>109</volume><issue>12</issue><spage>123710</spage><epage>123710-9</epage><pages>123710-123710-9</pages><issn>0021-8979</issn><eissn>1089-7550</eissn><coden>JAPIAU</coden><abstract>Using electron beam irradiation, cathodoluminescence, and photoluminescence under ultrahigh vacuum conditions, we study the effect of spontaneous polarization on polar (0001) and nonpolar (
1
1
−
00
) GaInN/GaN quantum well structures. We use cathodoluminescence measurements with an electron beam irradiation time of up to several hours. A drastic blueshift of the quantum well emission accompanied by a 100-fold increase of intensity is observed in polar samples. These changes can be described by an activation of the spontaneous polarization field due to the desorption of surface charges, which counteracts the piezoelectric field in the quantum well. Etching or annealing of the surface leads to similar effects. The influence of the sample structure was investigated by varying the cap thickness of the samples. A different time- dependent behavior of changes in the quantum well emission energy and the intensity depending on cap thickness and acceleration voltage was observed. This can be explained by de-screening and screening effects induced by the electron beam which are discussed in detail. For nonpolar (
1
1
−
00
) samples, no change in quantum well emission energy or intensity was observed. This is consistent with a spontaneous-polarization-induced surface field in the c-plane case and verifies the absence of the spontaneous polarization field in the nonpolar (
1
1
−
00
) direction.</abstract><cop>United States</cop><pub>American Institute of Physics</pub><doi>10.1063/1.3600221</doi></addata></record> |
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| identifier | ISSN: 0021-8979 |
| ispartof | Journal of applied physics, 2011-06, Vol.109 (12), p.123710-123710-9 |
| issn | 0021-8979 1089-7550 |
| language | eng |
| recordid | cdi_osti_scitechconnect_21538448 |
| source | AIP Journals Complete; AIP Digital Archive; Alma/SFX Local Collection |
| subjects | ANNEALING BEAMS CATHODOLUMINESCENCE CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY DESORPTION DIMENSIONS ELECTRIC POTENTIAL ELECTRICITY ELECTRON BEAMS EMISSION GALLIUM COMPOUNDS GALLIUM NITRIDES HEAT TREATMENTS INDIUM COMPOUNDS LEPTON BEAMS LUMINESCENCE MATERIALS NANOSTRUCTURES NITRIDES NITROGEN COMPOUNDS PARTICLE BEAMS PHOTOLUMINESCENCE PHOTON EMISSION PIEZOELECTRICITY PNICTIDES POLARIZATION QUANTUM WELLS SEMICONDUCTOR MATERIALS SORPTION SPECTRAL SHIFT STRESSES SURFACES THICKNESS TIME DEPENDENCE |
| title | Effects of spontaneous polarization on GaInN/GaN quantum well structures |
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