Optical characteristics of pulsed laser deposited Ge-Sb-Te thin films studied by spectroscopic ellipsometry

Pulsed laser deposition technique was used for the fabrication of (GeTe) 1−x (Sb 2 Te 3 ) x (x=0, 0.33, 0.50, 0.66, and 1) amorphous thin films. Scanning electron microscopy with energy-dispersive x-ray analysis, x-ray diffraction, optical reflectivity, and sheet resistance temperature dependences a...

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Veröffentlicht in:	Journal of applied physics 2011-04, Vol.109 (7), p.073520-073520-7
Hauptverfasser:	Němec, P., Přikryl, J., Nazabal, V., Frumar, M.
Format:	Artikel
Sprache:	eng
Schlagworte:	AMORPHOUS STATE ANNEALING ANTIMONY COMPOUNDS ANTIMONY TELLURIDES CHALCOGENIDES Chemical Sciences COHERENT SCATTERING CRYSTAL LATTICES CRYSTAL STRUCTURE CRYSTAL-PHASE TRANSFORMATIONS CUBIC LATTICES DEPOSITION DIFFRACTION ELECTROMAGNETIC RADIATION ELECTRON MICROSCOPY ELLIPSOMETRY ENERGY BEAM DEPOSITION FCC LATTICES GERMANIUM COMPOUNDS GERMANIUM TELLURIDES HEAT TREATMENTS IONIZING RADIATIONS IRRADIATION LASER RADIATION LAYERS Material chemistry MATERIALS SCIENCE MEASURING METHODS MICROSCOPY OPTICAL PROPERTIES PHASE TRANSFORMATIONS PHYSICAL PROPERTIES PULSED IRRADIATION RADIATIONS REFLECTIVITY SCANNING ELECTRON MICROSCOPY SCATTERING SOLIDS SURFACE COATING SURFACE PROPERTIES TELLURIDES TELLURIUM COMPOUNDS TEMPERATURE DEPENDENCE THIN FILMS X RADIATION X-RAY DIFFRACTION
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