Role of ZrO{sub 2} incorporation in the suppression of negative bias illumination-induced instability in Zn-Sn-O thin film transistors
Thin film transistors (TFTs) with In and Ga-free multicomponent Zn-Sn-Zr-O (ZTZO) channel layers were fabricated using the cosputtering approach. The incorporation of ZrO{sub 2} into the Zn-Sn-O (ZTO) films increased the contact resistance, which led to the degradation of the transport properties. I...
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| Veröffentlicht in: | Applied physics letters 2011-03, Vol.98 (12) |
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| creator | Yang, Bong Seob Oh, Seungha Lee, Ung Soo Kim, Yoon Jang Oh, Myeong Sook Hwang, Cheol Seong Kim, Hyeong Joon Huh, Myung Soo R and D Center, Samsung Mobile Display, Co., Ltd., Gyeonggi-do 449-902 Jeong, Jae Kyeong |
| description | Thin film transistors (TFTs) with In and Ga-free multicomponent Zn-Sn-Zr-O (ZTZO) channel layers were fabricated using the cosputtering approach. The incorporation of ZrO{sub 2} into the Zn-Sn-O (ZTO) films increased the contact resistance, which led to the degradation of the transport properties. In contrast, the threshold voltage shift under negative bias illumination stress (NBIS) was largely improved from -12.5 V (ZTO device) to -4.2 V (ZTZO device). This improvement was attributed to the reduction in the oxygen vacancy defects in the ZTZO film, suggesting that the photoinduced transition from V{sub O} to V{sub O}{sup 2+} was responsible for the NBIS-induced instability. |
| doi_str_mv | 10.1063/1.3571448 |
| format | Article |
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The incorporation of ZrO{sub 2} into the Zn-Sn-O (ZTO) films increased the contact resistance, which led to the degradation of the transport properties. In contrast, the threshold voltage shift under negative bias illumination stress (NBIS) was largely improved from -12.5 V (ZTO device) to -4.2 V (ZTZO device). This improvement was attributed to the reduction in the oxygen vacancy defects in the ZTZO film, suggesting that the photoinduced transition from V{sub O} to V{sub O}{sup 2+} was responsible for the NBIS-induced instability.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.3571448</identifier><language>eng</language><publisher>United States</publisher><subject>CHALCOGENIDES ; CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ; CRYSTAL DEFECTS ; CRYSTAL STRUCTURE ; CRYSTALS ; DEPOSITION ; ELECTRIC POTENTIAL ; ELEMENTS ; ILLUMINANCE ; INSTABILITY ; LAYERS ; MATERIALS ; METALS ; MOS TRANSISTORS ; NONMETALS ; OXIDES ; OXYGEN ; OXYGEN COMPOUNDS ; POINT DEFECTS ; SEMICONDUCTOR DEVICES ; SEMICONDUCTOR MATERIALS ; SPUTTERING ; THIN FILMS ; TIN ; TRANSISTORS ; TRANSITION ELEMENT COMPOUNDS ; VACANCIES ; ZINC ; ZINC COMPOUNDS ; ZIRCONIUM COMPOUNDS ; ZIRCONIUM OXIDES</subject><ispartof>Applied physics letters, 2011-03, Vol.98 (12)</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,315,781,785,886,27928,27929</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/21518339$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Yang, Bong Seob</creatorcontrib><creatorcontrib>Oh, Seungha</creatorcontrib><creatorcontrib>Lee, Ung Soo</creatorcontrib><creatorcontrib>Kim, Yoon Jang</creatorcontrib><creatorcontrib>Oh, Myeong Sook</creatorcontrib><creatorcontrib>Hwang, Cheol Seong</creatorcontrib><creatorcontrib>Kim, Hyeong Joon</creatorcontrib><creatorcontrib>Huh, Myung Soo</creatorcontrib><creatorcontrib>R and D Center, Samsung Mobile Display, Co., Ltd., Gyeonggi-do 449-902</creatorcontrib><creatorcontrib>Jeong, Jae Kyeong</creatorcontrib><title>Role of ZrO{sub 2} incorporation in the suppression of negative bias illumination-induced instability in Zn-Sn-O thin film transistors</title><title>Applied physics letters</title><description>Thin film transistors (TFTs) with In and Ga-free multicomponent Zn-Sn-Zr-O (ZTZO) channel layers were fabricated using the cosputtering approach. The incorporation of ZrO{sub 2} into the Zn-Sn-O (ZTO) films increased the contact resistance, which led to the degradation of the transport properties. In contrast, the threshold voltage shift under negative bias illumination stress (NBIS) was largely improved from -12.5 V (ZTO device) to -4.2 V (ZTZO device). This improvement was attributed to the reduction in the oxygen vacancy defects in the ZTZO film, suggesting that the photoinduced transition from V{sub O} to V{sub O}{sup 2+} was responsible for the NBIS-induced instability.</description><subject>CHALCOGENIDES</subject><subject>CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY</subject><subject>CRYSTAL DEFECTS</subject><subject>CRYSTAL STRUCTURE</subject><subject>CRYSTALS</subject><subject>DEPOSITION</subject><subject>ELECTRIC POTENTIAL</subject><subject>ELEMENTS</subject><subject>ILLUMINANCE</subject><subject>INSTABILITY</subject><subject>LAYERS</subject><subject>MATERIALS</subject><subject>METALS</subject><subject>MOS TRANSISTORS</subject><subject>NONMETALS</subject><subject>OXIDES</subject><subject>OXYGEN</subject><subject>OXYGEN COMPOUNDS</subject><subject>POINT DEFECTS</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SEMICONDUCTOR MATERIALS</subject><subject>SPUTTERING</subject><subject>THIN FILMS</subject><subject>TIN</subject><subject>TRANSISTORS</subject><subject>TRANSITION ELEMENT COMPOUNDS</subject><subject>VACANCIES</subject><subject>ZINC</subject><subject>ZINC COMPOUNDS</subject><subject>ZIRCONIUM COMPOUNDS</subject><subject>ZIRCONIUM OXIDES</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2011</creationdate><recordtype>article</recordtype><recordid>eNqNjMtKAzEUhoMoOF4WvkHAdWrOpNOZrkVxV6iuuimZNGOPpCdDTkYQcetzm4oP4Orn-29C3ICegV6YO5iZpoX5vDsRFei2VQagOxWV1tqoxbKBc3HB_FawqY2pxPc6Bi_jIDdp9clTL-svieRiGmOyGSMVknnvJU_jmDzz0Sp18q8lfveyR8sSQ5gOSL8DhbSbnN-VIWfbY8D8cTzZkHomtSpnBQYMB5mTJUbOMfGVOBtsYH_9p5fi9vHh5f5JRc64ZYfZu72LRN7lbQ0NdMYszf9aP3hdWJs</recordid><startdate>20110321</startdate><enddate>20110321</enddate><creator>Yang, Bong Seob</creator><creator>Oh, Seungha</creator><creator>Lee, Ung Soo</creator><creator>Kim, Yoon Jang</creator><creator>Oh, Myeong Sook</creator><creator>Hwang, Cheol Seong</creator><creator>Kim, Hyeong Joon</creator><creator>Huh, Myung Soo</creator><creator>R and D Center, Samsung Mobile Display, Co., Ltd., Gyeonggi-do 449-902</creator><creator>Jeong, Jae Kyeong</creator><scope>OTOTI</scope></search><sort><creationdate>20110321</creationdate><title>Role of ZrO{sub 2} incorporation in the suppression of negative bias illumination-induced instability in Zn-Sn-O thin film transistors</title><author>Yang, Bong Seob ; Oh, Seungha ; Lee, Ung Soo ; Kim, Yoon Jang ; Oh, Myeong Sook ; Hwang, Cheol Seong ; Kim, Hyeong Joon ; Huh, Myung Soo ; R and D Center, Samsung Mobile Display, Co., Ltd., Gyeonggi-do 449-902 ; Jeong, Jae Kyeong</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-osti_scitechconnect_215183393</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2011</creationdate><topic>CHALCOGENIDES</topic><topic>CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY</topic><topic>CRYSTAL DEFECTS</topic><topic>CRYSTAL STRUCTURE</topic><topic>CRYSTALS</topic><topic>DEPOSITION</topic><topic>ELECTRIC POTENTIAL</topic><topic>ELEMENTS</topic><topic>ILLUMINANCE</topic><topic>INSTABILITY</topic><topic>LAYERS</topic><topic>MATERIALS</topic><topic>METALS</topic><topic>MOS TRANSISTORS</topic><topic>NONMETALS</topic><topic>OXIDES</topic><topic>OXYGEN</topic><topic>OXYGEN COMPOUNDS</topic><topic>POINT DEFECTS</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SEMICONDUCTOR MATERIALS</topic><topic>SPUTTERING</topic><topic>THIN FILMS</topic><topic>TIN</topic><topic>TRANSISTORS</topic><topic>TRANSITION ELEMENT COMPOUNDS</topic><topic>VACANCIES</topic><topic>ZINC</topic><topic>ZINC COMPOUNDS</topic><topic>ZIRCONIUM COMPOUNDS</topic><topic>ZIRCONIUM OXIDES</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Yang, Bong Seob</creatorcontrib><creatorcontrib>Oh, Seungha</creatorcontrib><creatorcontrib>Lee, Ung Soo</creatorcontrib><creatorcontrib>Kim, Yoon Jang</creatorcontrib><creatorcontrib>Oh, Myeong Sook</creatorcontrib><creatorcontrib>Hwang, Cheol Seong</creatorcontrib><creatorcontrib>Kim, Hyeong Joon</creatorcontrib><creatorcontrib>Huh, Myung Soo</creatorcontrib><creatorcontrib>R and D Center, Samsung Mobile Display, Co., Ltd., Gyeonggi-do 449-902</creatorcontrib><creatorcontrib>Jeong, Jae Kyeong</creatorcontrib><collection>OSTI.GOV</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Yang, Bong Seob</au><au>Oh, Seungha</au><au>Lee, Ung Soo</au><au>Kim, Yoon Jang</au><au>Oh, Myeong Sook</au><au>Hwang, Cheol Seong</au><au>Kim, Hyeong Joon</au><au>Huh, Myung Soo</au><au>R and D Center, Samsung Mobile Display, Co., Ltd., Gyeonggi-do 449-902</au><au>Jeong, Jae Kyeong</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Role of ZrO{sub 2} incorporation in the suppression of negative bias illumination-induced instability in Zn-Sn-O thin film transistors</atitle><jtitle>Applied physics letters</jtitle><date>2011-03-21</date><risdate>2011</risdate><volume>98</volume><issue>12</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>Thin film transistors (TFTs) with In and Ga-free multicomponent Zn-Sn-Zr-O (ZTZO) channel layers were fabricated using the cosputtering approach. The incorporation of ZrO{sub 2} into the Zn-Sn-O (ZTO) films increased the contact resistance, which led to the degradation of the transport properties. In contrast, the threshold voltage shift under negative bias illumination stress (NBIS) was largely improved from -12.5 V (ZTO device) to -4.2 V (ZTZO device). This improvement was attributed to the reduction in the oxygen vacancy defects in the ZTZO film, suggesting that the photoinduced transition from V{sub O} to V{sub O}{sup 2+} was responsible for the NBIS-induced instability.</abstract><cop>United States</cop><doi>10.1063/1.3571448</doi></addata></record> |
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| ispartof | Applied physics letters, 2011-03, Vol.98 (12) |
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| source | AIP Journals Complete; AIP Digital Archive; Alma/SFX Local Collection |
| subjects | CHALCOGENIDES CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY CRYSTAL DEFECTS CRYSTAL STRUCTURE CRYSTALS DEPOSITION ELECTRIC POTENTIAL ELEMENTS ILLUMINANCE INSTABILITY LAYERS MATERIALS METALS MOS TRANSISTORS NONMETALS OXIDES OXYGEN OXYGEN COMPOUNDS POINT DEFECTS SEMICONDUCTOR DEVICES SEMICONDUCTOR MATERIALS SPUTTERING THIN FILMS TIN TRANSISTORS TRANSITION ELEMENT COMPOUNDS VACANCIES ZINC ZINC COMPOUNDS ZIRCONIUM COMPOUNDS ZIRCONIUM OXIDES |
| title | Role of ZrO{sub 2} incorporation in the suppression of negative bias illumination-induced instability in Zn-Sn-O thin film transistors |
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