Productivity Improvement for the SHX-SEN's Single-Wafer High-Current Ion Implanter
Equipment productivity is a critical issue for device fabrication. For ion implantation, productivity is determined both by ion current at the wafer and by utilization efficiency of the ion beam. Such improvements not only result in higher fabrication efficiency but also reduce consumption of both e...
Gespeichert in:
| Hauptverfasser: | , , , , , , , , , |
|---|---|
| Format: | Tagungsbericht |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | 1 |
| container_start_page | |
| container_title | |
| container_volume | 1321 |
| creator | Ninomiya, Shiro Ochi, Akihiro Kimura, Yasuhiko Yumiyama, Toshio Kudo, Tetsuya Kurose, Takeshi Kariya, Hiroyuki Tsukihara, Mitsukuni Ishikawa, Koji Ueno, Kazuyoshi |
| description | Equipment productivity is a critical issue for device fabrication. For ion implantation, productivity is determined both by ion current at the wafer and by utilization efficiency of the ion beam. Such improvements not only result in higher fabrication efficiency but also reduce consumption of both electrical power and process gases. For high-current ion implanters, reduction of implant area is a key factor to increase efficiency. SEN has developed the SAVING system (Scanning Area Variation Implantation with Narrower Geometrical pattern) to address this opportunity. In this paper, three variations of the SAVING system are introduced along with discussion of their effects on fab productivity. |
| doi_str_mv | 10.1063/1.3548415 |
| format | Conference Proceeding |
| fullrecord | <record><control><sourceid>proquest_osti_</sourceid><recordid>TN_cdi_osti_scitechconnect_21513142</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>1448727333</sourcerecordid><originalsourceid>FETCH-LOGICAL-o216t-f45dc1d20d819c5d5fbded23a29a68401b5002fc7455f9360b4579f34c0d2d93</originalsourceid><addsrcrecordid>eNotj8tKAzEUhoMXsNQufIMBF7pJzcllMllKaW2hqNiC3Q3TXNqR6USTTMG3d0r9Nmdxvv9wfoTugIyB5OwJxkzwgoO4QAMQArDMIb9EIyULIvsVKWROrtCAEMUx5Wxzg0YxfpEeSSlTfIA-3oM3nU71sU6_2eLwHfzRHmybMudDlvY2W803eDV9fYjZqm53jcWflbMhm9e7PZ50IZzchW9P2aZqkw236NpVTbSj_zlE69l0PZnj5dvLYvK8xJ5CnrDjwmgwlJgClBZGuK2xhrKKqiovOIGtIIQ6LbkQTrGcbLmQyjGuiaFGsSG6P5_1MdVl1HWyeq9921qdSgoCGHDaW49nqy_209mYykMdtW36V63vYgmcF5JK1vMHwIFgSw</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype><pqid>1448727333</pqid></control><display><type>conference_proceeding</type><title>Productivity Improvement for the SHX-SEN's Single-Wafer High-Current Ion Implanter</title><source>AIP Journals Complete</source><creator>Ninomiya, Shiro ; Ochi, Akihiro ; Kimura, Yasuhiko ; Yumiyama, Toshio ; Kudo, Tetsuya ; Kurose, Takeshi ; Kariya, Hiroyuki ; Tsukihara, Mitsukuni ; Ishikawa, Koji ; Ueno, Kazuyoshi</creator><creatorcontrib>Ninomiya, Shiro ; Ochi, Akihiro ; Kimura, Yasuhiko ; Yumiyama, Toshio ; Kudo, Tetsuya ; Kurose, Takeshi ; Kariya, Hiroyuki ; Tsukihara, Mitsukuni ; Ishikawa, Koji ; Ueno, Kazuyoshi</creatorcontrib><description>Equipment productivity is a critical issue for device fabrication. For ion implantation, productivity is determined both by ion current at the wafer and by utilization efficiency of the ion beam. Such improvements not only result in higher fabrication efficiency but also reduce consumption of both electrical power and process gases. For high-current ion implanters, reduction of implant area is a key factor to increase efficiency. SEN has developed the SAVING system (Scanning Area Variation Implantation with Narrower Geometrical pattern) to address this opportunity. In this paper, three variations of the SAVING system are introduced along with discussion of their effects on fab productivity.</description><identifier>ISSN: 0094-243X</identifier><identifier>ISBN: 9780735408760</identifier><identifier>ISBN: 0735408769</identifier><identifier>EISSN: 1551-7616</identifier><identifier>DOI: 10.1063/1.3548415</identifier><language>eng</language><publisher>United States</publisher><subject>BEAM CURRENTS ; BEAMS ; CHARGED PARTICLES ; CHEMICAL REACTIONS ; CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ; Conferences ; CURRENTS ; EFFICIENCY ; Electric power generation ; ENERGY CONSERVATION ; FABRICATION ; FLUIDS ; GASES ; Implantation ; Implants ; ION BEAMS ; Ion currents ; ION IMPLANTATION ; IONS ; MATERIALS SCIENCE ; PRODUCTIVITY ; REDUCTION ; Scanning ; VARIATIONS</subject><ispartof>AIP conference proceedings, 2010, Vol.1321 (1)</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,314,777,781,882,27905,27906</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/21513142$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Ninomiya, Shiro</creatorcontrib><creatorcontrib>Ochi, Akihiro</creatorcontrib><creatorcontrib>Kimura, Yasuhiko</creatorcontrib><creatorcontrib>Yumiyama, Toshio</creatorcontrib><creatorcontrib>Kudo, Tetsuya</creatorcontrib><creatorcontrib>Kurose, Takeshi</creatorcontrib><creatorcontrib>Kariya, Hiroyuki</creatorcontrib><creatorcontrib>Tsukihara, Mitsukuni</creatorcontrib><creatorcontrib>Ishikawa, Koji</creatorcontrib><creatorcontrib>Ueno, Kazuyoshi</creatorcontrib><title>Productivity Improvement for the SHX-SEN's Single-Wafer High-Current Ion Implanter</title><title>AIP conference proceedings</title><description>Equipment productivity is a critical issue for device fabrication. For ion implantation, productivity is determined both by ion current at the wafer and by utilization efficiency of the ion beam. Such improvements not only result in higher fabrication efficiency but also reduce consumption of both electrical power and process gases. For high-current ion implanters, reduction of implant area is a key factor to increase efficiency. SEN has developed the SAVING system (Scanning Area Variation Implantation with Narrower Geometrical pattern) to address this opportunity. In this paper, three variations of the SAVING system are introduced along with discussion of their effects on fab productivity.</description><subject>BEAM CURRENTS</subject><subject>BEAMS</subject><subject>CHARGED PARTICLES</subject><subject>CHEMICAL REACTIONS</subject><subject>CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY</subject><subject>Conferences</subject><subject>CURRENTS</subject><subject>EFFICIENCY</subject><subject>Electric power generation</subject><subject>ENERGY CONSERVATION</subject><subject>FABRICATION</subject><subject>FLUIDS</subject><subject>GASES</subject><subject>Implantation</subject><subject>Implants</subject><subject>ION BEAMS</subject><subject>Ion currents</subject><subject>ION IMPLANTATION</subject><subject>IONS</subject><subject>MATERIALS SCIENCE</subject><subject>PRODUCTIVITY</subject><subject>REDUCTION</subject><subject>Scanning</subject><subject>VARIATIONS</subject><issn>0094-243X</issn><issn>1551-7616</issn><isbn>9780735408760</isbn><isbn>0735408769</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2010</creationdate><recordtype>conference_proceeding</recordtype><recordid>eNotj8tKAzEUhoMXsNQufIMBF7pJzcllMllKaW2hqNiC3Q3TXNqR6USTTMG3d0r9Nmdxvv9wfoTugIyB5OwJxkzwgoO4QAMQArDMIb9EIyULIvsVKWROrtCAEMUx5Wxzg0YxfpEeSSlTfIA-3oM3nU71sU6_2eLwHfzRHmybMudDlvY2W803eDV9fYjZqm53jcWflbMhm9e7PZ50IZzchW9P2aZqkw236NpVTbSj_zlE69l0PZnj5dvLYvK8xJ5CnrDjwmgwlJgClBZGuK2xhrKKqiovOIGtIIQ6LbkQTrGcbLmQyjGuiaFGsSG6P5_1MdVl1HWyeq9921qdSgoCGHDaW49nqy_209mYykMdtW36V63vYgmcF5JK1vMHwIFgSw</recordid><startdate>20100101</startdate><enddate>20100101</enddate><creator>Ninomiya, Shiro</creator><creator>Ochi, Akihiro</creator><creator>Kimura, Yasuhiko</creator><creator>Yumiyama, Toshio</creator><creator>Kudo, Tetsuya</creator><creator>Kurose, Takeshi</creator><creator>Kariya, Hiroyuki</creator><creator>Tsukihara, Mitsukuni</creator><creator>Ishikawa, Koji</creator><creator>Ueno, Kazuyoshi</creator><scope>7U5</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><scope>OTOTI</scope></search><sort><creationdate>20100101</creationdate><title>Productivity Improvement for the SHX-SEN's Single-Wafer High-Current Ion Implanter</title><author>Ninomiya, Shiro ; Ochi, Akihiro ; Kimura, Yasuhiko ; Yumiyama, Toshio ; Kudo, Tetsuya ; Kurose, Takeshi ; Kariya, Hiroyuki ; Tsukihara, Mitsukuni ; Ishikawa, Koji ; Ueno, Kazuyoshi</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-o216t-f45dc1d20d819c5d5fbded23a29a68401b5002fc7455f9360b4579f34c0d2d93</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2010</creationdate><topic>BEAM CURRENTS</topic><topic>BEAMS</topic><topic>CHARGED PARTICLES</topic><topic>CHEMICAL REACTIONS</topic><topic>CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY</topic><topic>Conferences</topic><topic>CURRENTS</topic><topic>EFFICIENCY</topic><topic>Electric power generation</topic><topic>ENERGY CONSERVATION</topic><topic>FABRICATION</topic><topic>FLUIDS</topic><topic>GASES</topic><topic>Implantation</topic><topic>Implants</topic><topic>ION BEAMS</topic><topic>Ion currents</topic><topic>ION IMPLANTATION</topic><topic>IONS</topic><topic>MATERIALS SCIENCE</topic><topic>PRODUCTIVITY</topic><topic>REDUCTION</topic><topic>Scanning</topic><topic>VARIATIONS</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Ninomiya, Shiro</creatorcontrib><creatorcontrib>Ochi, Akihiro</creatorcontrib><creatorcontrib>Kimura, Yasuhiko</creatorcontrib><creatorcontrib>Yumiyama, Toshio</creatorcontrib><creatorcontrib>Kudo, Tetsuya</creatorcontrib><creatorcontrib>Kurose, Takeshi</creatorcontrib><creatorcontrib>Kariya, Hiroyuki</creatorcontrib><creatorcontrib>Tsukihara, Mitsukuni</creatorcontrib><creatorcontrib>Ishikawa, Koji</creatorcontrib><creatorcontrib>Ueno, Kazuyoshi</creatorcontrib><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>OSTI.GOV</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Ninomiya, Shiro</au><au>Ochi, Akihiro</au><au>Kimura, Yasuhiko</au><au>Yumiyama, Toshio</au><au>Kudo, Tetsuya</au><au>Kurose, Takeshi</au><au>Kariya, Hiroyuki</au><au>Tsukihara, Mitsukuni</au><au>Ishikawa, Koji</au><au>Ueno, Kazuyoshi</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Productivity Improvement for the SHX-SEN's Single-Wafer High-Current Ion Implanter</atitle><btitle>AIP conference proceedings</btitle><date>2010-01-01</date><risdate>2010</risdate><volume>1321</volume><issue>1</issue><issn>0094-243X</issn><eissn>1551-7616</eissn><isbn>9780735408760</isbn><isbn>0735408769</isbn><abstract>Equipment productivity is a critical issue for device fabrication. For ion implantation, productivity is determined both by ion current at the wafer and by utilization efficiency of the ion beam. Such improvements not only result in higher fabrication efficiency but also reduce consumption of both electrical power and process gases. For high-current ion implanters, reduction of implant area is a key factor to increase efficiency. SEN has developed the SAVING system (Scanning Area Variation Implantation with Narrower Geometrical pattern) to address this opportunity. In this paper, three variations of the SAVING system are introduced along with discussion of their effects on fab productivity.</abstract><cop>United States</cop><doi>10.1063/1.3548415</doi></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0094-243X |
| ispartof | AIP conference proceedings, 2010, Vol.1321 (1) |
| issn | 0094-243X 1551-7616 |
| language | eng |
| recordid | cdi_osti_scitechconnect_21513142 |
| source | AIP Journals Complete |
| subjects | BEAM CURRENTS BEAMS CHARGED PARTICLES CHEMICAL REACTIONS CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY Conferences CURRENTS EFFICIENCY Electric power generation ENERGY CONSERVATION FABRICATION FLUIDS GASES Implantation Implants ION BEAMS Ion currents ION IMPLANTATION IONS MATERIALS SCIENCE PRODUCTIVITY REDUCTION Scanning VARIATIONS |
| title | Productivity Improvement for the SHX-SEN's Single-Wafer High-Current Ion Implanter |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-18T12%3A40%3A16IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_osti_&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=Productivity%20Improvement%20for%20the%20SHX-SEN's%20Single-Wafer%20High-Current%20Ion%20Implanter&rft.btitle=AIP%20conference%20proceedings&rft.au=Ninomiya,%20Shiro&rft.date=2010-01-01&rft.volume=1321&rft.issue=1&rft.issn=0094-243X&rft.eissn=1551-7616&rft.isbn=9780735408760&rft.isbn_list=0735408769&rft_id=info:doi/10.1063/1.3548415&rft_dat=%3Cproquest_osti_%3E1448727333%3C/proquest_osti_%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=1448727333&rft_id=info:pmid/&rfr_iscdi=true |