True Zero Degree Incident Implants on VIISta3000

The deliberate use of channeling to control depth profiles has come of age in the application to CMOS imaging sensor device manufacturing. In order to enable the true zero implant application on VIISta3000, we have optimized beam incidence angle control, using beam optics models and experimental mea...

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Hauptverfasser: Chang, Shengwu, Chavva, Venkataramana, Sinclair, Frank
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Chavva, Venkataramana
Sinclair, Frank
description The deliberate use of channeling to control depth profiles has come of age in the application to CMOS imaging sensor device manufacturing. In order to enable the true zero implant application on VIISta3000, we have optimized beam incidence angle control, using beam optics models and experimental measurements. The experiment measurement and the beam optics analysis results agree, showing a variation of less than 0.03 degree (1 sigma ) across the wafer and from wafer to wafer. Achieving this accuracy in a manufacturing environment requires careful calibration and tight control of the collimator magnet and the mechanical scan system. In this paper we discuss the root cause of beam incidence angle variation on VIISta3000 and explain the calibration and optimization used to insure the consistent minimized beam incidence angle. We show experimental data, including ThermaWave and SIMS profiles.
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source AIP Journals Complete
subjects ACCURACY
BEAM OPTICS
BEAMS
CALIBRATION
CHANNELING
CHEMICAL ANALYSIS
COLLIMATORS
IMPLANTS
INCIDENCE ANGLE
ION BEAMS
ION MICROPROBE ANALYSIS
MAGNETS
MANUFACTURING
MASS SPECTROSCOPY
MICROANALYSIS
NONDESTRUCTIVE ANALYSIS
OPTIMIZATION
PARTICLE ACCELERATORS
SENSORS
SPECTROSCOPY
title True Zero Degree Incident Implants on VIISta3000
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