Influence of Ag thickness on structural, optical, and electrical properties of ZnS/Ag/ZnS multilayers prepared by ion beam assisted deposition

The structural, optical, and electrical characteristics of zinc sulfide (ZnS)/Ag/ZnS (ZAZ) multilayer films prepared by ion beam assisted deposition on k9 glass have been investigated as a function of Ag layer thickness. The characteristics of ZAZ multilayer are significantly improved up insertion o...

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Veröffentlicht in:Journal of applied physics 2010-10, Vol.108 (7)
Hauptverfasser: Leng, Jian, Yu, Zhinong, Xue, Wei, Zhang, Ting, Jiang, Yurong, Zhang, Jie, Zhang, Dongpu
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container_issue 7
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container_title Journal of applied physics
container_volume 108
creator Leng, Jian
Yu, Zhinong
Xue, Wei
Zhang, Ting
Jiang, Yurong
Zhang, Jie
Zhang, Dongpu
description The structural, optical, and electrical characteristics of zinc sulfide (ZnS)/Ag/ZnS (ZAZ) multilayer films prepared by ion beam assisted deposition on k9 glass have been investigated as a function of Ag layer thickness. The characteristics of ZAZ multilayer are significantly improved up insertion of optimal Ag thickness between ZnS layers. The results show that due to bombardment of Ar ion beam, distinct Ag islands evolve into continuous Ag films at a thin Ag thickness of about 4 nm. The thinner Ag film as a thickness of 2 nm leads to high sheet resistance and low transmittance for the interface scattering induced by the Ag islands or noncontinuous films; and when the Ag thickness is over 4 nm, the ZAZ multilayer exhibits a remarkably reduced sheet resistance between 7–80 Ω/sq for the increase in carrier concentration and mobility of Ag layer, and a high transmittance over 90% for the interference phenomena of multilayers and low absorption and surface scattering of Ag layer. The ZAZ multilayer with 14 nm Ag film has a figure of merit up to 6.32×10−2 Ω−1, an average transmittance over 92% and a sheet resistance of 7.1 Ω/sq. The results suggest that ZAZ film has better optoelectrical properties than conditional indium tin oxide single layer.
doi_str_mv 10.1063/1.3490787
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The characteristics of ZAZ multilayer are significantly improved up insertion of optimal Ag thickness between ZnS layers. The results show that due to bombardment of Ar ion beam, distinct Ag islands evolve into continuous Ag films at a thin Ag thickness of about 4 nm. The thinner Ag film as a thickness of 2 nm leads to high sheet resistance and low transmittance for the interface scattering induced by the Ag islands or noncontinuous films; and when the Ag thickness is over 4 nm, the ZAZ multilayer exhibits a remarkably reduced sheet resistance between 7–80 Ω/sq for the increase in carrier concentration and mobility of Ag layer, and a high transmittance over 90% for the interference phenomena of multilayers and low absorption and surface scattering of Ag layer. The ZAZ multilayer with 14 nm Ag film has a figure of merit up to 6.32×10−2 Ω−1, an average transmittance over 92% and a sheet resistance of 7.1 Ω/sq. The results suggest that ZAZ film has better optoelectrical properties than conditional indium tin oxide single layer.</abstract><cop>United States</cop><doi>10.1063/1.3490787</doi><oa>free_for_read</oa></addata></record>
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source AIP Journals; AIP Digital Archive; Alma/SFX Local Collection
subjects ARGON IONS
BEAMS
CARRIER DENSITY
CARRIER MOBILITY
CHALCOGENIDES
CHARGED PARTICLES
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
CRYSTAL GROWTH
DEPOSITION
DIMENSIONS
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELEMENTS
INDIUM
INORGANIC PHOSPHORS
INTERFACES
ION BEAMS
IONS
LAYERS
LIGHT TRANSMISSION
MATERIALS
MATERIALS SCIENCE
METALS
MOBILITY
OPACITY
OPTICAL PROPERTIES
OXIDES
OXYGEN COMPOUNDS
PHOSPHORS
PHYSICAL PROPERTIES
SEMICONDUCTOR MATERIALS
SILVER
SULFIDES
SULFUR COMPOUNDS
SURFACES
THICKNESS
THIN FILMS
TIN COMPOUNDS
TIN OXIDES
TRANSITION ELEMENTS
TRANSMISSION
ZINC COMPOUNDS
ZINC SULFIDES
title Influence of Ag thickness on structural, optical, and electrical properties of ZnS/Ag/ZnS multilayers prepared by ion beam assisted deposition
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