Influence of the surface potential on electrical properties of Al{sub x}Ga{sub 1-x}N/GaN heterostructures with different Al-content: Effect of growth method
The influence of the growth method on the surface potential and thus on the sheet carrier concentration of GaN capped Al{sub x}Ga{sub 1-x}N/GaN heterostructures was evaluated. Nominally undoped low pressure metal-organic vapor-phase (MOVPE) and plasma-assisted molecular beam epitaxial (PA-MBE) grown...
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| Veröffentlicht in: | Journal of applied physics 2010-03, Vol.107 (5) |
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| creator | Koehler, K. Mueller, S. Aidam, R. Waltereit, P. Pletschen, W. Kirste, L. Menner, H. P. Bronner, W. Leuther, A. Quay, R. Mikulla, M. Ambacher, O. Granzner, R. Schwierz, F. Buchheim, C. Goldhahn, R. |
| description | The influence of the growth method on the surface potential and thus on the sheet carrier concentration of GaN capped Al{sub x}Ga{sub 1-x}N/GaN heterostructures was evaluated. Nominally undoped low pressure metal-organic vapor-phase (MOVPE) and plasma-assisted molecular beam epitaxial (PA-MBE) grown structures with an Al-content between 12% and 30% yield carrier concentrations from 3.6x10{sup 12} to 1.2x10{sup 13} cm{sup -2}. A difference of the concentrations for a fixed Al-content was found between the different epitaxial techniques. This result indicates unambiguously different surface potentials determined quantitatively from the carrier concentration, and is verified in addition by the results of photoreflectance spectroscopy. The GaN surface potentials of MOVPE and PA-MBE grown samples amounts to (0.26{+-}0.04) and (0.61{+-}0.10) eV irrespective of the Al-content of the barrier layer. After device fabrication, we find that due to the identical surface potential defined by the Ni Schottky gate, the threshold voltage for a given Al-content is the same for samples grown with different techniques. Thus, the interplay between epitaxy and process technology defines the threshold voltage. |
| doi_str_mv | 10.1063/1.3319585 |
| format | Article |
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P. ; Bronner, W. ; Leuther, A. ; Quay, R. ; Mikulla, M. ; Ambacher, O. ; Granzner, R. ; Schwierz, F. ; Buchheim, C. ; Goldhahn, R.</creator><creatorcontrib>Koehler, K. ; Mueller, S. ; Aidam, R. ; Waltereit, P. ; Pletschen, W. ; Kirste, L. ; Menner, H. P. ; Bronner, W. ; Leuther, A. ; Quay, R. ; Mikulla, M. ; Ambacher, O. ; Granzner, R. ; Schwierz, F. ; Buchheim, C. ; Goldhahn, R.</creatorcontrib><description>The influence of the growth method on the surface potential and thus on the sheet carrier concentration of GaN capped Al{sub x}Ga{sub 1-x}N/GaN heterostructures was evaluated. Nominally undoped low pressure metal-organic vapor-phase (MOVPE) and plasma-assisted molecular beam epitaxial (PA-MBE) grown structures with an Al-content between 12% and 30% yield carrier concentrations from 3.6x10{sup 12} to 1.2x10{sup 13} cm{sup -2}. A difference of the concentrations for a fixed Al-content was found between the different epitaxial techniques. This result indicates unambiguously different surface potentials determined quantitatively from the carrier concentration, and is verified in addition by the results of photoreflectance spectroscopy. The GaN surface potentials of MOVPE and PA-MBE grown samples amounts to (0.26{+-}0.04) and (0.61{+-}0.10) eV irrespective of the Al-content of the barrier layer. After device fabrication, we find that due to the identical surface potential defined by the Ni Schottky gate, the threshold voltage for a given Al-content is the same for samples grown with different techniques. Thus, the interplay between epitaxy and process technology defines the threshold voltage.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.3319585</identifier><language>eng</language><publisher>United States</publisher><subject>ABSORPTION SPECTROSCOPY ; ALUMINIUM COMPOUNDS ; CARRIER DENSITY ; CHEMICAL COATING ; CHEMICAL VAPOR DEPOSITION ; CONCENTRATION RATIO ; CRYSTAL GROWTH ; CRYSTAL GROWTH METHODS ; DEPOSITION ; DIMENSIONLESS NUMBERS ; ELECTRIC POTENTIAL ; ELECTRICAL PROPERTIES ; ENERGY RANGE ; EPITAXY ; EV RANGE ; GALLIUM COMPOUNDS ; GALLIUM NITRIDES ; HETEROJUNCTIONS ; MATERIALS ; MATERIALS SCIENCE ; MOLECULAR BEAM EPITAXY ; NITRIDES ; NITROGEN COMPOUNDS ; OPTICAL PROPERTIES ; ORGANIC COMPOUNDS ; ORGANOMETALLIC COMPOUNDS ; PHYSICAL PROPERTIES ; PLASMA ; PNICTIDES ; POTENTIALS ; SEMICONDUCTOR JUNCTIONS ; SEMICONDUCTOR MATERIALS ; SPECTRAL REFLECTANCE ; SPECTROSCOPY ; SURFACE COATING ; SURFACE POTENTIAL</subject><ispartof>Journal of applied physics, 2010-03, Vol.107 (5)</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,314,780,784,885,27924,27925</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/21476385$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Koehler, K.</creatorcontrib><creatorcontrib>Mueller, S.</creatorcontrib><creatorcontrib>Aidam, R.</creatorcontrib><creatorcontrib>Waltereit, P.</creatorcontrib><creatorcontrib>Pletschen, W.</creatorcontrib><creatorcontrib>Kirste, L.</creatorcontrib><creatorcontrib>Menner, H. 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Nominally undoped low pressure metal-organic vapor-phase (MOVPE) and plasma-assisted molecular beam epitaxial (PA-MBE) grown structures with an Al-content between 12% and 30% yield carrier concentrations from 3.6x10{sup 12} to 1.2x10{sup 13} cm{sup -2}. A difference of the concentrations for a fixed Al-content was found between the different epitaxial techniques. This result indicates unambiguously different surface potentials determined quantitatively from the carrier concentration, and is verified in addition by the results of photoreflectance spectroscopy. The GaN surface potentials of MOVPE and PA-MBE grown samples amounts to (0.26{+-}0.04) and (0.61{+-}0.10) eV irrespective of the Al-content of the barrier layer. After device fabrication, we find that due to the identical surface potential defined by the Ni Schottky gate, the threshold voltage for a given Al-content is the same for samples grown with different techniques. Thus, the interplay between epitaxy and process technology defines the threshold voltage.</description><subject>ABSORPTION SPECTROSCOPY</subject><subject>ALUMINIUM COMPOUNDS</subject><subject>CARRIER DENSITY</subject><subject>CHEMICAL COATING</subject><subject>CHEMICAL VAPOR DEPOSITION</subject><subject>CONCENTRATION RATIO</subject><subject>CRYSTAL GROWTH</subject><subject>CRYSTAL GROWTH METHODS</subject><subject>DEPOSITION</subject><subject>DIMENSIONLESS NUMBERS</subject><subject>ELECTRIC POTENTIAL</subject><subject>ELECTRICAL PROPERTIES</subject><subject>ENERGY RANGE</subject><subject>EPITAXY</subject><subject>EV RANGE</subject><subject>GALLIUM COMPOUNDS</subject><subject>GALLIUM NITRIDES</subject><subject>HETEROJUNCTIONS</subject><subject>MATERIALS</subject><subject>MATERIALS SCIENCE</subject><subject>MOLECULAR BEAM EPITAXY</subject><subject>NITRIDES</subject><subject>NITROGEN COMPOUNDS</subject><subject>OPTICAL PROPERTIES</subject><subject>ORGANIC COMPOUNDS</subject><subject>ORGANOMETALLIC COMPOUNDS</subject><subject>PHYSICAL PROPERTIES</subject><subject>PLASMA</subject><subject>PNICTIDES</subject><subject>POTENTIALS</subject><subject>SEMICONDUCTOR JUNCTIONS</subject><subject>SEMICONDUCTOR MATERIALS</subject><subject>SPECTRAL REFLECTANCE</subject><subject>SPECTROSCOPY</subject><subject>SURFACE COATING</subject><subject>SURFACE POTENTIAL</subject><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2010</creationdate><recordtype>article</recordtype><recordid>eNqNjU1OwzAQRi0EEuFnwQ0ssU5r17hJ2CFUCpuu2FfGHROjYEf2WK2EehMOywRxAFYz3-h9bxi7kWImxVLN5Uwp2elWn7BKirarG63FKauEWMi67ZrunF3k_CGElK3qKvb9EtxQIFjg0XHsgeeSnKE4RoSA3gw8Bg4DWEzeUhpTHCGhhzw1HoavXN744bg2v4usD8fNfG02vAeEFDOmYrEkovcee77zzkEiMTVrG8P0456v6Ghx8r2nuCfsE7CPuyt25syQ4fpvXrLbp9Xr43NNWr_N1iPYniSBytuFvGuWqtXqf9QPGEpgug</recordid><startdate>20100315</startdate><enddate>20100315</enddate><creator>Koehler, K.</creator><creator>Mueller, S.</creator><creator>Aidam, R.</creator><creator>Waltereit, P.</creator><creator>Pletschen, W.</creator><creator>Kirste, L.</creator><creator>Menner, H. 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P. ; Bronner, W. ; Leuther, A. ; Quay, R. ; Mikulla, M. ; Ambacher, O. ; Granzner, R. ; Schwierz, F. ; Buchheim, C. ; Goldhahn, R.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-osti_scitechconnect_214763853</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2010</creationdate><topic>ABSORPTION SPECTROSCOPY</topic><topic>ALUMINIUM COMPOUNDS</topic><topic>CARRIER DENSITY</topic><topic>CHEMICAL COATING</topic><topic>CHEMICAL VAPOR DEPOSITION</topic><topic>CONCENTRATION RATIO</topic><topic>CRYSTAL GROWTH</topic><topic>CRYSTAL GROWTH METHODS</topic><topic>DEPOSITION</topic><topic>DIMENSIONLESS NUMBERS</topic><topic>ELECTRIC POTENTIAL</topic><topic>ELECTRICAL PROPERTIES</topic><topic>ENERGY RANGE</topic><topic>EPITAXY</topic><topic>EV RANGE</topic><topic>GALLIUM COMPOUNDS</topic><topic>GALLIUM NITRIDES</topic><topic>HETEROJUNCTIONS</topic><topic>MATERIALS</topic><topic>MATERIALS SCIENCE</topic><topic>MOLECULAR BEAM EPITAXY</topic><topic>NITRIDES</topic><topic>NITROGEN COMPOUNDS</topic><topic>OPTICAL PROPERTIES</topic><topic>ORGANIC COMPOUNDS</topic><topic>ORGANOMETALLIC COMPOUNDS</topic><topic>PHYSICAL PROPERTIES</topic><topic>PLASMA</topic><topic>PNICTIDES</topic><topic>POTENTIALS</topic><topic>SEMICONDUCTOR JUNCTIONS</topic><topic>SEMICONDUCTOR MATERIALS</topic><topic>SPECTRAL REFLECTANCE</topic><topic>SPECTROSCOPY</topic><topic>SURFACE COATING</topic><topic>SURFACE POTENTIAL</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Koehler, K.</creatorcontrib><creatorcontrib>Mueller, S.</creatorcontrib><creatorcontrib>Aidam, R.</creatorcontrib><creatorcontrib>Waltereit, P.</creatorcontrib><creatorcontrib>Pletschen, W.</creatorcontrib><creatorcontrib>Kirste, L.</creatorcontrib><creatorcontrib>Menner, H. 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P.</au><au>Bronner, W.</au><au>Leuther, A.</au><au>Quay, R.</au><au>Mikulla, M.</au><au>Ambacher, O.</au><au>Granzner, R.</au><au>Schwierz, F.</au><au>Buchheim, C.</au><au>Goldhahn, R.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Influence of the surface potential on electrical properties of Al{sub x}Ga{sub 1-x}N/GaN heterostructures with different Al-content: Effect of growth method</atitle><jtitle>Journal of applied physics</jtitle><date>2010-03-15</date><risdate>2010</risdate><volume>107</volume><issue>5</issue><issn>0021-8979</issn><eissn>1089-7550</eissn><abstract>The influence of the growth method on the surface potential and thus on the sheet carrier concentration of GaN capped Al{sub x}Ga{sub 1-x}N/GaN heterostructures was evaluated. Nominally undoped low pressure metal-organic vapor-phase (MOVPE) and plasma-assisted molecular beam epitaxial (PA-MBE) grown structures with an Al-content between 12% and 30% yield carrier concentrations from 3.6x10{sup 12} to 1.2x10{sup 13} cm{sup -2}. A difference of the concentrations for a fixed Al-content was found between the different epitaxial techniques. This result indicates unambiguously different surface potentials determined quantitatively from the carrier concentration, and is verified in addition by the results of photoreflectance spectroscopy. The GaN surface potentials of MOVPE and PA-MBE grown samples amounts to (0.26{+-}0.04) and (0.61{+-}0.10) eV irrespective of the Al-content of the barrier layer. After device fabrication, we find that due to the identical surface potential defined by the Ni Schottky gate, the threshold voltage for a given Al-content is the same for samples grown with different techniques. Thus, the interplay between epitaxy and process technology defines the threshold voltage.</abstract><cop>United States</cop><doi>10.1063/1.3319585</doi></addata></record> |
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| ispartof | Journal of applied physics, 2010-03, Vol.107 (5) |
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| source | AIP Journals Complete; AIP Digital Archive; Alma/SFX Local Collection |
| subjects | ABSORPTION SPECTROSCOPY ALUMINIUM COMPOUNDS CARRIER DENSITY CHEMICAL COATING CHEMICAL VAPOR DEPOSITION CONCENTRATION RATIO CRYSTAL GROWTH CRYSTAL GROWTH METHODS DEPOSITION DIMENSIONLESS NUMBERS ELECTRIC POTENTIAL ELECTRICAL PROPERTIES ENERGY RANGE EPITAXY EV RANGE GALLIUM COMPOUNDS GALLIUM NITRIDES HETEROJUNCTIONS MATERIALS MATERIALS SCIENCE MOLECULAR BEAM EPITAXY NITRIDES NITROGEN COMPOUNDS OPTICAL PROPERTIES ORGANIC COMPOUNDS ORGANOMETALLIC COMPOUNDS PHYSICAL PROPERTIES PLASMA PNICTIDES POTENTIALS SEMICONDUCTOR JUNCTIONS SEMICONDUCTOR MATERIALS SPECTRAL REFLECTANCE SPECTROSCOPY SURFACE COATING SURFACE POTENTIAL |
| title | Influence of the surface potential on electrical properties of Al{sub x}Ga{sub 1-x}N/GaN heterostructures with different Al-content: Effect of growth method |
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