Modeling of radiative properties of Sn plasmas for extreme-ultraviolet source
Atomic processes in Sn plasmas are investigated for application to extreme-ultraviolet (EUV) light sources used in microlithography. We develop a full collisional radiative (CR) model of Sn plasmas based on calculated atomic data using Hebrew University Lawrence Livermore Atomic Code ( HULLAC ). Res...
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Veröffentlicht in: | Journal of applied physics 2010-06, Vol.107 (11), p.113303-113303-11 |
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container_issue | 11 |
container_start_page | 113303 |
container_title | Journal of applied physics |
container_volume | 107 |
creator | Sasaki, Akira Sunahara, Atsushi Furukawa, Hiroyuki Nishihara, Katsunobu Fujioka, Shinsuke Nishikawa, Takeshi Koike, Fumihiro Ohashi, Hayato Tanuma, Hajime |
description | Atomic processes in Sn plasmas are investigated for application to extreme-ultraviolet (EUV) light sources used in microlithography. We develop a full collisional radiative (CR) model of Sn plasmas based on calculated atomic data using Hebrew University Lawrence Livermore Atomic Code (
HULLAC
). Resonance and satellite lines from singly and multiply excited states of Sn ions, which contribute significantly to the EUV emission, are identified and included in the model through a systematic investigation of their effect on the emission spectra. The wavelengths of the
4
d
−
4
f
+
4
p
−
4
d
transitions of
Sn
5
+
to
Sn
13
+
are investigated, because of their importance for determining the conversion efficiency of the EUV source, in conjunction with the effect of configuration interaction in the calculation of atomic structure. Calculated emission spectra are compared with those of charge exchange spectroscopy and of laser produced plasma EUV sources. The comparison is also carried out for the opacity of a radiatively heated Sn sample. A reasonable agreement is obtained between calculated and experimental EUV emission spectra observed under the typical condition of EUV sources with the ion density and ionization temperature of the plasma around
10
18
cm
−
3
and 20 eV, respectively, by applying a wavelength correction to the resonance and satellite lines. Finally, the spectral emissivity and opacity of Sn plasmas are calculated as a function of electron temperature and ion density. The results are useful for radiation hydrodynamics simulations for the optimization of EUV sources. |
doi_str_mv | 10.1063/1.3373427 |
format | Article |
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HULLAC
). Resonance and satellite lines from singly and multiply excited states of Sn ions, which contribute significantly to the EUV emission, are identified and included in the model through a systematic investigation of their effect on the emission spectra. The wavelengths of the
4
d
−
4
f
+
4
p
−
4
d
transitions of
Sn
5
+
to
Sn
13
+
are investigated, because of their importance for determining the conversion efficiency of the EUV source, in conjunction with the effect of configuration interaction in the calculation of atomic structure. Calculated emission spectra are compared with those of charge exchange spectroscopy and of laser produced plasma EUV sources. The comparison is also carried out for the opacity of a radiatively heated Sn sample. A reasonable agreement is obtained between calculated and experimental EUV emission spectra observed under the typical condition of EUV sources with the ion density and ionization temperature of the plasma around
10
18
cm
−
3
and 20 eV, respectively, by applying a wavelength correction to the resonance and satellite lines. Finally, the spectral emissivity and opacity of Sn plasmas are calculated as a function of electron temperature and ion density. The results are useful for radiation hydrodynamics simulations for the optimization of EUV sources.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.3373427</identifier><identifier>CODEN: JAPIAU</identifier><language>eng</language><publisher>United States: American Institute of Physics</publisher><subject>70 PLASMA PHYSICS AND FUSION TECHNOLOGY ; ATOMIC AND MOLECULAR PHYSICS ; CHARGE EXCHANGE ; CHARGED PARTICLES ; COMPARATIVE EVALUATIONS ; CONFIGURATION INTERACTION ; ELECTROMAGNETIC RADIATION ; ELECTRON TEMPERATURE ; ELEMENTS ; EMISSION SPECTRA ; EMISSIVITY ; ENERGY LEVELS ; EVALUATION ; EXCITED STATES ; EXTREME ULTRAVIOLET RADIATION ; FLUID MECHANICS ; HYDRODYNAMICS ; ION DENSITY ; ION TEMPERATURE ; IONIZATION ; IONS ; LASER-PRODUCED PLASMA ; LIGHT SOURCES ; MECHANICS ; METALS ; OPACITY ; OPTICAL PROPERTIES ; PHYSICAL PROPERTIES ; PLASMA ; PLASMA DENSITY ; PLASMA SIMULATION ; RADIATION SOURCES ; RADIATIONS ; SIMULATION ; SPECTRA ; SURFACE PROPERTIES ; TIN ; TIN IONS ; ULTRAVIOLET RADIATION</subject><ispartof>Journal of applied physics, 2010-06, Vol.107 (11), p.113303-113303-11</ispartof><rights>2010 American Institute of Physics</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c378t-1df1eec17a840f58fe1d408e756a3f0879eb3d994e5981548e2225b6436ba55b3</citedby><cites>FETCH-LOGICAL-c378t-1df1eec17a840f58fe1d408e756a3f0879eb3d994e5981548e2225b6436ba55b3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/jap/article-lookup/doi/10.1063/1.3373427$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>230,314,776,780,790,881,1553,4498,27901,27902,76127,76133</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/21476278$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Sasaki, Akira</creatorcontrib><creatorcontrib>Sunahara, Atsushi</creatorcontrib><creatorcontrib>Furukawa, Hiroyuki</creatorcontrib><creatorcontrib>Nishihara, Katsunobu</creatorcontrib><creatorcontrib>Fujioka, Shinsuke</creatorcontrib><creatorcontrib>Nishikawa, Takeshi</creatorcontrib><creatorcontrib>Koike, Fumihiro</creatorcontrib><creatorcontrib>Ohashi, Hayato</creatorcontrib><creatorcontrib>Tanuma, Hajime</creatorcontrib><title>Modeling of radiative properties of Sn plasmas for extreme-ultraviolet source</title><title>Journal of applied physics</title><description>Atomic processes in Sn plasmas are investigated for application to extreme-ultraviolet (EUV) light sources used in microlithography. We develop a full collisional radiative (CR) model of Sn plasmas based on calculated atomic data using Hebrew University Lawrence Livermore Atomic Code (
HULLAC
). Resonance and satellite lines from singly and multiply excited states of Sn ions, which contribute significantly to the EUV emission, are identified and included in the model through a systematic investigation of their effect on the emission spectra. The wavelengths of the
4
d
−
4
f
+
4
p
−
4
d
transitions of
Sn
5
+
to
Sn
13
+
are investigated, because of their importance for determining the conversion efficiency of the EUV source, in conjunction with the effect of configuration interaction in the calculation of atomic structure. Calculated emission spectra are compared with those of charge exchange spectroscopy and of laser produced plasma EUV sources. The comparison is also carried out for the opacity of a radiatively heated Sn sample. A reasonable agreement is obtained between calculated and experimental EUV emission spectra observed under the typical condition of EUV sources with the ion density and ionization temperature of the plasma around
10
18
cm
−
3
and 20 eV, respectively, by applying a wavelength correction to the resonance and satellite lines. Finally, the spectral emissivity and opacity of Sn plasmas are calculated as a function of electron temperature and ion density. The results are useful for radiation hydrodynamics simulations for the optimization of EUV sources.</description><subject>70 PLASMA PHYSICS AND FUSION TECHNOLOGY</subject><subject>ATOMIC AND MOLECULAR PHYSICS</subject><subject>CHARGE EXCHANGE</subject><subject>CHARGED PARTICLES</subject><subject>COMPARATIVE EVALUATIONS</subject><subject>CONFIGURATION INTERACTION</subject><subject>ELECTROMAGNETIC RADIATION</subject><subject>ELECTRON TEMPERATURE</subject><subject>ELEMENTS</subject><subject>EMISSION SPECTRA</subject><subject>EMISSIVITY</subject><subject>ENERGY LEVELS</subject><subject>EVALUATION</subject><subject>EXCITED STATES</subject><subject>EXTREME ULTRAVIOLET RADIATION</subject><subject>FLUID MECHANICS</subject><subject>HYDRODYNAMICS</subject><subject>ION DENSITY</subject><subject>ION TEMPERATURE</subject><subject>IONIZATION</subject><subject>IONS</subject><subject>LASER-PRODUCED PLASMA</subject><subject>LIGHT SOURCES</subject><subject>MECHANICS</subject><subject>METALS</subject><subject>OPACITY</subject><subject>OPTICAL PROPERTIES</subject><subject>PHYSICAL PROPERTIES</subject><subject>PLASMA</subject><subject>PLASMA DENSITY</subject><subject>PLASMA SIMULATION</subject><subject>RADIATION SOURCES</subject><subject>RADIATIONS</subject><subject>SIMULATION</subject><subject>SPECTRA</subject><subject>SURFACE PROPERTIES</subject><subject>TIN</subject><subject>TIN IONS</subject><subject>ULTRAVIOLET RADIATION</subject><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2010</creationdate><recordtype>article</recordtype><recordid>eNp10M1KAzEUhuEgCtbqwjsYcOVias5kMkk2ghT_oMWFug6ZzIlGppMhSYvevS21S1cHDi_f4iHkEugMaMNuYMaYYHUljsgEqFSl4JwekwmlFZRSCXVKzlL6ohRAMjUhy2XosPfDRxFcEU3nTfYbLMYYRozZY9r9X4di7E1amVS4EAv8zhFXWK77HM3Ghx5zkcI6WjwnJ870CS_-7pS8P9y_zZ_Kxcvj8_xuUVomZC6hc4BoQRhZU8elQ-hqKlHwxjBHpVDYsk6pGrmSwGuJVVXxtqlZ0xrOWzYlV_vdkLLXyfqM9tOGYUCbdQW1aCoht9X1vrIxpBTR6TH6lYk_GqjeaWnQf1rb9nbf7sa2BmH4Pz6Q6eD0gYz9AggUcac</recordid><startdate>20100601</startdate><enddate>20100601</enddate><creator>Sasaki, Akira</creator><creator>Sunahara, Atsushi</creator><creator>Furukawa, Hiroyuki</creator><creator>Nishihara, Katsunobu</creator><creator>Fujioka, Shinsuke</creator><creator>Nishikawa, Takeshi</creator><creator>Koike, Fumihiro</creator><creator>Ohashi, Hayato</creator><creator>Tanuma, Hajime</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>OTOTI</scope></search><sort><creationdate>20100601</creationdate><title>Modeling of radiative properties of Sn plasmas for extreme-ultraviolet source</title><author>Sasaki, Akira ; Sunahara, Atsushi ; Furukawa, Hiroyuki ; Nishihara, Katsunobu ; Fujioka, Shinsuke ; Nishikawa, Takeshi ; Koike, Fumihiro ; Ohashi, Hayato ; Tanuma, Hajime</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c378t-1df1eec17a840f58fe1d408e756a3f0879eb3d994e5981548e2225b6436ba55b3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2010</creationdate><topic>70 PLASMA PHYSICS AND FUSION TECHNOLOGY</topic><topic>ATOMIC AND MOLECULAR PHYSICS</topic><topic>CHARGE EXCHANGE</topic><topic>CHARGED PARTICLES</topic><topic>COMPARATIVE EVALUATIONS</topic><topic>CONFIGURATION INTERACTION</topic><topic>ELECTROMAGNETIC RADIATION</topic><topic>ELECTRON TEMPERATURE</topic><topic>ELEMENTS</topic><topic>EMISSION SPECTRA</topic><topic>EMISSIVITY</topic><topic>ENERGY LEVELS</topic><topic>EVALUATION</topic><topic>EXCITED STATES</topic><topic>EXTREME ULTRAVIOLET RADIATION</topic><topic>FLUID MECHANICS</topic><topic>HYDRODYNAMICS</topic><topic>ION DENSITY</topic><topic>ION TEMPERATURE</topic><topic>IONIZATION</topic><topic>IONS</topic><topic>LASER-PRODUCED PLASMA</topic><topic>LIGHT SOURCES</topic><topic>MECHANICS</topic><topic>METALS</topic><topic>OPACITY</topic><topic>OPTICAL PROPERTIES</topic><topic>PHYSICAL PROPERTIES</topic><topic>PLASMA</topic><topic>PLASMA DENSITY</topic><topic>PLASMA SIMULATION</topic><topic>RADIATION SOURCES</topic><topic>RADIATIONS</topic><topic>SIMULATION</topic><topic>SPECTRA</topic><topic>SURFACE PROPERTIES</topic><topic>TIN</topic><topic>TIN IONS</topic><topic>ULTRAVIOLET RADIATION</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Sasaki, Akira</creatorcontrib><creatorcontrib>Sunahara, Atsushi</creatorcontrib><creatorcontrib>Furukawa, Hiroyuki</creatorcontrib><creatorcontrib>Nishihara, Katsunobu</creatorcontrib><creatorcontrib>Fujioka, Shinsuke</creatorcontrib><creatorcontrib>Nishikawa, Takeshi</creatorcontrib><creatorcontrib>Koike, Fumihiro</creatorcontrib><creatorcontrib>Ohashi, Hayato</creatorcontrib><creatorcontrib>Tanuma, Hajime</creatorcontrib><collection>CrossRef</collection><collection>OSTI.GOV</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Sasaki, Akira</au><au>Sunahara, Atsushi</au><au>Furukawa, Hiroyuki</au><au>Nishihara, Katsunobu</au><au>Fujioka, Shinsuke</au><au>Nishikawa, Takeshi</au><au>Koike, Fumihiro</au><au>Ohashi, Hayato</au><au>Tanuma, Hajime</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Modeling of radiative properties of Sn plasmas for extreme-ultraviolet source</atitle><jtitle>Journal of applied physics</jtitle><date>2010-06-01</date><risdate>2010</risdate><volume>107</volume><issue>11</issue><spage>113303</spage><epage>113303-11</epage><pages>113303-113303-11</pages><issn>0021-8979</issn><eissn>1089-7550</eissn><coden>JAPIAU</coden><abstract>Atomic processes in Sn plasmas are investigated for application to extreme-ultraviolet (EUV) light sources used in microlithography. We develop a full collisional radiative (CR) model of Sn plasmas based on calculated atomic data using Hebrew University Lawrence Livermore Atomic Code (
HULLAC
). Resonance and satellite lines from singly and multiply excited states of Sn ions, which contribute significantly to the EUV emission, are identified and included in the model through a systematic investigation of their effect on the emission spectra. The wavelengths of the
4
d
−
4
f
+
4
p
−
4
d
transitions of
Sn
5
+
to
Sn
13
+
are investigated, because of their importance for determining the conversion efficiency of the EUV source, in conjunction with the effect of configuration interaction in the calculation of atomic structure. Calculated emission spectra are compared with those of charge exchange spectroscopy and of laser produced plasma EUV sources. The comparison is also carried out for the opacity of a radiatively heated Sn sample. A reasonable agreement is obtained between calculated and experimental EUV emission spectra observed under the typical condition of EUV sources with the ion density and ionization temperature of the plasma around
10
18
cm
−
3
and 20 eV, respectively, by applying a wavelength correction to the resonance and satellite lines. Finally, the spectral emissivity and opacity of Sn plasmas are calculated as a function of electron temperature and ion density. The results are useful for radiation hydrodynamics simulations for the optimization of EUV sources.</abstract><cop>United States</cop><pub>American Institute of Physics</pub><doi>10.1063/1.3373427</doi></addata></record> |
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subjects | 70 PLASMA PHYSICS AND FUSION TECHNOLOGY ATOMIC AND MOLECULAR PHYSICS CHARGE EXCHANGE CHARGED PARTICLES COMPARATIVE EVALUATIONS CONFIGURATION INTERACTION ELECTROMAGNETIC RADIATION ELECTRON TEMPERATURE ELEMENTS EMISSION SPECTRA EMISSIVITY ENERGY LEVELS EVALUATION EXCITED STATES EXTREME ULTRAVIOLET RADIATION FLUID MECHANICS HYDRODYNAMICS ION DENSITY ION TEMPERATURE IONIZATION IONS LASER-PRODUCED PLASMA LIGHT SOURCES MECHANICS METALS OPACITY OPTICAL PROPERTIES PHYSICAL PROPERTIES PLASMA PLASMA DENSITY PLASMA SIMULATION RADIATION SOURCES RADIATIONS SIMULATION SPECTRA SURFACE PROPERTIES TIN TIN IONS ULTRAVIOLET RADIATION |
title | Modeling of radiative properties of Sn plasmas for extreme-ultraviolet source |
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