Thermoelectric properties of electrically stressed Sb/Bi-Sb-Te multilayered films
Electrically stressed Bi-Sb-Te thin films have demonstrated markedly enhanced Hall mobility and moderately reduced carrier concentration. To lower electrical resistivity further, a Sb-inserted Bi-Sb-Te multilayer structure was prepared through consecutively sputtering Bi-Sb-Te and Sb layers followed...
Gespeichert in:
| Veröffentlicht in: | Journal of applied physics 2010-03, Vol.107 (6), p.066103-066103-3 |
|---|---|
| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 066103-3 |
|---|---|
| container_issue | 6 |
| container_start_page | 066103 |
| container_title | Journal of applied physics |
| container_volume | 107 |
| creator | Liao, Chien-Neng Chang, Chih-Yu Chu, Hsu-Shen |
| description | Electrically stressed Bi-Sb-Te thin films have demonstrated markedly enhanced Hall mobility and moderately reduced carrier concentration. To lower electrical resistivity further, a Sb-inserted Bi-Sb-Te multilayer structure was prepared through consecutively sputtering Bi-Sb-Te and Sb layers followed by electric current stressing. The electrically stressed Sb/Bi-Sb-Te film demonstrates high carrier concentration and enhanced Hall mobility. We propose that the additional Sb supply suppresses electromigration-induced Sb depletion in crystal lattices, thus maintains high carrier concentration of the Bi-Sb-Te film. The presented approach provides a simple means to optimize thermoelectric properties of Bi-Sb-Te films. |
| doi_str_mv | 10.1063/1.3326878 |
| format | Article |
| fullrecord | <record><control><sourceid>scitation_osti_</sourceid><recordid>TN_cdi_osti_scitechconnect_21476172</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>jap</sourcerecordid><originalsourceid>FETCH-LOGICAL-c312t-13e636bef8cd93604cf1724b21632ea38ee2a82443bb188187daca4926a7b0b93</originalsourceid><addsrcrecordid>eNp1kE1LAzEQQIMoWKsH_8GCJw_bZpJtNrkIWvyCgkjrOSTpLI3sNiWJh_33bm09ePA0MPN4DI-Qa6AToIJPYcI5E7KWJ2QEVKqyns3oKRlRyqCUqlbn5CKlT0oBJFcj8r7aYOwCtuhy9K7YxbDDmD2mIjTF79q0bV-kHDElXBdLO33w5dKWKyy6rzb71vQYh0Pj2y5dkrPGtAmvjnNMPp4eV_OXcvH2_Dq_X5SOA8slcBRcWGykWysuaOUaqFllGQjO0HCJyIxkVcWtBSlB1mvjTKWYMLWlVvExuTl4Q8peJ-czuo0L2-3wsmZQ1WLwDdTtgXIxpBSx0bvoOxN7DVTvi2nQx2IDe3dg9zKTfdj-D__Npn-y8W_8yHMo</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Thermoelectric properties of electrically stressed Sb/Bi-Sb-Te multilayered films</title><source>AIP Journals Complete</source><source>AIP Digital Archive</source><source>Alma/SFX Local Collection</source><creator>Liao, Chien-Neng ; Chang, Chih-Yu ; Chu, Hsu-Shen</creator><creatorcontrib>Liao, Chien-Neng ; Chang, Chih-Yu ; Chu, Hsu-Shen</creatorcontrib><description>Electrically stressed Bi-Sb-Te thin films have demonstrated markedly enhanced Hall mobility and moderately reduced carrier concentration. To lower electrical resistivity further, a Sb-inserted Bi-Sb-Te multilayer structure was prepared through consecutively sputtering Bi-Sb-Te and Sb layers followed by electric current stressing. The electrically stressed Sb/Bi-Sb-Te film demonstrates high carrier concentration and enhanced Hall mobility. We propose that the additional Sb supply suppresses electromigration-induced Sb depletion in crystal lattices, thus maintains high carrier concentration of the Bi-Sb-Te film. The presented approach provides a simple means to optimize thermoelectric properties of Bi-Sb-Te films.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.3326878</identifier><identifier>CODEN: JAPIAU</identifier><language>eng</language><publisher>United States: American Institute of Physics</publisher><subject>ALLOYS ; ANTIMONIDES ; ANTIMONY COMPOUNDS ; BISMUTH COMPOUNDS ; BISMUTH TELLURIDES ; CARRIER DENSITY ; CARRIER MOBILITY ; CHALCOGENIDES ; CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ; CRYSTAL LATTICES ; CRYSTAL STRUCTURE ; CURRENTS ; ELECTRIC CONDUCTIVITY ; ELECTRIC CURRENTS ; ELECTRICAL PROPERTIES ; HALL EFFECT ; INTERMETALLIC COMPOUNDS ; LAYERS ; MATERIALS SCIENCE ; MOBILITY ; PHYSICAL PROPERTIES ; PNICTIDES ; SPUTTERING ; TELLURIDES ; TELLURIUM COMPOUNDS ; THERMOELECTRIC PROPERTIES ; THIN FILMS</subject><ispartof>Journal of applied physics, 2010-03, Vol.107 (6), p.066103-066103-3</ispartof><rights>2010 American Institute of Physics</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c312t-13e636bef8cd93604cf1724b21632ea38ee2a82443bb188187daca4926a7b0b93</citedby><cites>FETCH-LOGICAL-c312t-13e636bef8cd93604cf1724b21632ea38ee2a82443bb188187daca4926a7b0b93</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/jap/article-lookup/doi/10.1063/1.3326878$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>230,314,776,780,790,881,1553,4498,27901,27902,76126,76132</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/21476172$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Liao, Chien-Neng</creatorcontrib><creatorcontrib>Chang, Chih-Yu</creatorcontrib><creatorcontrib>Chu, Hsu-Shen</creatorcontrib><title>Thermoelectric properties of electrically stressed Sb/Bi-Sb-Te multilayered films</title><title>Journal of applied physics</title><description>Electrically stressed Bi-Sb-Te thin films have demonstrated markedly enhanced Hall mobility and moderately reduced carrier concentration. To lower electrical resistivity further, a Sb-inserted Bi-Sb-Te multilayer structure was prepared through consecutively sputtering Bi-Sb-Te and Sb layers followed by electric current stressing. The electrically stressed Sb/Bi-Sb-Te film demonstrates high carrier concentration and enhanced Hall mobility. We propose that the additional Sb supply suppresses electromigration-induced Sb depletion in crystal lattices, thus maintains high carrier concentration of the Bi-Sb-Te film. The presented approach provides a simple means to optimize thermoelectric properties of Bi-Sb-Te films.</description><subject>ALLOYS</subject><subject>ANTIMONIDES</subject><subject>ANTIMONY COMPOUNDS</subject><subject>BISMUTH COMPOUNDS</subject><subject>BISMUTH TELLURIDES</subject><subject>CARRIER DENSITY</subject><subject>CARRIER MOBILITY</subject><subject>CHALCOGENIDES</subject><subject>CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY</subject><subject>CRYSTAL LATTICES</subject><subject>CRYSTAL STRUCTURE</subject><subject>CURRENTS</subject><subject>ELECTRIC CONDUCTIVITY</subject><subject>ELECTRIC CURRENTS</subject><subject>ELECTRICAL PROPERTIES</subject><subject>HALL EFFECT</subject><subject>INTERMETALLIC COMPOUNDS</subject><subject>LAYERS</subject><subject>MATERIALS SCIENCE</subject><subject>MOBILITY</subject><subject>PHYSICAL PROPERTIES</subject><subject>PNICTIDES</subject><subject>SPUTTERING</subject><subject>TELLURIDES</subject><subject>TELLURIUM COMPOUNDS</subject><subject>THERMOELECTRIC PROPERTIES</subject><subject>THIN FILMS</subject><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2010</creationdate><recordtype>article</recordtype><recordid>eNp1kE1LAzEQQIMoWKsH_8GCJw_bZpJtNrkIWvyCgkjrOSTpLI3sNiWJh_33bm09ePA0MPN4DI-Qa6AToIJPYcI5E7KWJ2QEVKqyns3oKRlRyqCUqlbn5CKlT0oBJFcj8r7aYOwCtuhy9K7YxbDDmD2mIjTF79q0bV-kHDElXBdLO33w5dKWKyy6rzb71vQYh0Pj2y5dkrPGtAmvjnNMPp4eV_OXcvH2_Dq_X5SOA8slcBRcWGykWysuaOUaqFllGQjO0HCJyIxkVcWtBSlB1mvjTKWYMLWlVvExuTl4Q8peJ-czuo0L2-3wsmZQ1WLwDdTtgXIxpBSx0bvoOxN7DVTvi2nQx2IDe3dg9zKTfdj-D__Npn-y8W_8yHMo</recordid><startdate>20100315</startdate><enddate>20100315</enddate><creator>Liao, Chien-Neng</creator><creator>Chang, Chih-Yu</creator><creator>Chu, Hsu-Shen</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>OTOTI</scope></search><sort><creationdate>20100315</creationdate><title>Thermoelectric properties of electrically stressed Sb/Bi-Sb-Te multilayered films</title><author>Liao, Chien-Neng ; Chang, Chih-Yu ; Chu, Hsu-Shen</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c312t-13e636bef8cd93604cf1724b21632ea38ee2a82443bb188187daca4926a7b0b93</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2010</creationdate><topic>ALLOYS</topic><topic>ANTIMONIDES</topic><topic>ANTIMONY COMPOUNDS</topic><topic>BISMUTH COMPOUNDS</topic><topic>BISMUTH TELLURIDES</topic><topic>CARRIER DENSITY</topic><topic>CARRIER MOBILITY</topic><topic>CHALCOGENIDES</topic><topic>CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY</topic><topic>CRYSTAL LATTICES</topic><topic>CRYSTAL STRUCTURE</topic><topic>CURRENTS</topic><topic>ELECTRIC CONDUCTIVITY</topic><topic>ELECTRIC CURRENTS</topic><topic>ELECTRICAL PROPERTIES</topic><topic>HALL EFFECT</topic><topic>INTERMETALLIC COMPOUNDS</topic><topic>LAYERS</topic><topic>MATERIALS SCIENCE</topic><topic>MOBILITY</topic><topic>PHYSICAL PROPERTIES</topic><topic>PNICTIDES</topic><topic>SPUTTERING</topic><topic>TELLURIDES</topic><topic>TELLURIUM COMPOUNDS</topic><topic>THERMOELECTRIC PROPERTIES</topic><topic>THIN FILMS</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Liao, Chien-Neng</creatorcontrib><creatorcontrib>Chang, Chih-Yu</creatorcontrib><creatorcontrib>Chu, Hsu-Shen</creatorcontrib><collection>CrossRef</collection><collection>OSTI.GOV</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Liao, Chien-Neng</au><au>Chang, Chih-Yu</au><au>Chu, Hsu-Shen</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Thermoelectric properties of electrically stressed Sb/Bi-Sb-Te multilayered films</atitle><jtitle>Journal of applied physics</jtitle><date>2010-03-15</date><risdate>2010</risdate><volume>107</volume><issue>6</issue><spage>066103</spage><epage>066103-3</epage><pages>066103-066103-3</pages><issn>0021-8979</issn><eissn>1089-7550</eissn><coden>JAPIAU</coden><abstract>Electrically stressed Bi-Sb-Te thin films have demonstrated markedly enhanced Hall mobility and moderately reduced carrier concentration. To lower electrical resistivity further, a Sb-inserted Bi-Sb-Te multilayer structure was prepared through consecutively sputtering Bi-Sb-Te and Sb layers followed by electric current stressing. The electrically stressed Sb/Bi-Sb-Te film demonstrates high carrier concentration and enhanced Hall mobility. We propose that the additional Sb supply suppresses electromigration-induced Sb depletion in crystal lattices, thus maintains high carrier concentration of the Bi-Sb-Te film. The presented approach provides a simple means to optimize thermoelectric properties of Bi-Sb-Te films.</abstract><cop>United States</cop><pub>American Institute of Physics</pub><doi>10.1063/1.3326878</doi></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0021-8979 |
| ispartof | Journal of applied physics, 2010-03, Vol.107 (6), p.066103-066103-3 |
| issn | 0021-8979 1089-7550 |
| language | eng |
| recordid | cdi_osti_scitechconnect_21476172 |
| source | AIP Journals Complete; AIP Digital Archive; Alma/SFX Local Collection |
| subjects | ALLOYS ANTIMONIDES ANTIMONY COMPOUNDS BISMUTH COMPOUNDS BISMUTH TELLURIDES CARRIER DENSITY CARRIER MOBILITY CHALCOGENIDES CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY CRYSTAL LATTICES CRYSTAL STRUCTURE CURRENTS ELECTRIC CONDUCTIVITY ELECTRIC CURRENTS ELECTRICAL PROPERTIES HALL EFFECT INTERMETALLIC COMPOUNDS LAYERS MATERIALS SCIENCE MOBILITY PHYSICAL PROPERTIES PNICTIDES SPUTTERING TELLURIDES TELLURIUM COMPOUNDS THERMOELECTRIC PROPERTIES THIN FILMS |
| title | Thermoelectric properties of electrically stressed Sb/Bi-Sb-Te multilayered films |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-07T22%3A50%3A53IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-scitation_osti_&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Thermoelectric%20properties%20of%20electrically%20stressed%20Sb/Bi-Sb-Te%20multilayered%20films&rft.jtitle=Journal%20of%20applied%20physics&rft.au=Liao,%20Chien-Neng&rft.date=2010-03-15&rft.volume=107&rft.issue=6&rft.spage=066103&rft.epage=066103-3&rft.pages=066103-066103-3&rft.issn=0021-8979&rft.eissn=1089-7550&rft.coden=JAPIAU&rft_id=info:doi/10.1063/1.3326878&rft_dat=%3Cscitation_osti_%3Ejap%3C/scitation_osti_%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |