On the Sn loss from thin films of the material system Cu-Zn-Sn-S in high vacuum
In this paper the Sn loss from thin films of the material system Cu-Zn-Sn-S and the subsystems Cu-Sn-S and Sn-S in high vacuum is investigated. A combination of in situ x-ray diffractometry and x-ray fluorescence (XRF) at a synchrotron light source allowed identifying phases, which tend to decompose...
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| Veröffentlicht in: | Journal of applied physics 2010-01, Vol.107 (1), p.013516-013516-6 |
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| container_title | Journal of applied physics |
| container_volume | 107 |
| creator | Weber, A. Mainz, R. Schock, H. W. |
| description | In this paper the Sn loss from thin films of the material system Cu-Zn-Sn-S and the subsystems Cu-Sn-S and Sn-S in high vacuum is investigated. A combination of
in situ
x-ray diffractometry and x-ray fluorescence (XRF) at a synchrotron light source allowed identifying phases, which tend to decompose and evaporate a Sn-containing compound. On the basis of the XRF results a quantification of the Sn loss from the films during annealing experiments is presented. It can be shown that the evaporation rate from the different phases decreases according to the order
SnS
→
Cu
2
SnS
3
→
Cu
4
SnS
4
→
Cu
2
ZnSnS
4
. The phase SnS is assigned as the evaporating compound. The influence of an additional inert gas component on the Sn loss and on the formation of
Cu
2
ZnSnS
4
thin films is discussed. |
| doi_str_mv | 10.1063/1.3273495 |
| format | Article |
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in situ
x-ray diffractometry and x-ray fluorescence (XRF) at a synchrotron light source allowed identifying phases, which tend to decompose and evaporate a Sn-containing compound. On the basis of the XRF results a quantification of the Sn loss from the films during annealing experiments is presented. It can be shown that the evaporation rate from the different phases decreases according to the order
SnS
→
Cu
2
SnS
3
→
Cu
4
SnS
4
→
Cu
2
ZnSnS
4
. The phase SnS is assigned as the evaporating compound. The influence of an additional inert gas component on the Sn loss and on the formation of
Cu
2
ZnSnS
4
thin films is discussed.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.3273495</identifier><identifier>CODEN: JAPIAU</identifier><language>eng</language><publisher>United States: American Institute of Physics</publisher><subject>ANNEALING ; CHALCOGENIDES ; CHEMICAL ANALYSIS ; COHERENT SCATTERING ; COPPER COMPOUNDS ; DEPOSITION ; DIFFRACTION ; ELEMENTS ; EVAPORATION ; HEAT TREATMENTS ; INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY ; LOSSES ; MATERIALS ; MATERIALS SCIENCE ; METALS ; NONDESTRUCTIVE ANALYSIS ; PHASE STABILITY ; PHASE STUDIES ; PHASE TRANSFORMATIONS ; SCATTERING ; SEMICONDUCTOR MATERIALS ; STABILITY ; SULFIDES ; SULFUR COMPOUNDS ; SURFACE COATING ; THIN FILMS ; TIN ; TIN COMPOUNDS ; TIN SULFIDES ; TRANSITION ELEMENT COMPOUNDS ; VACUUM COATING ; X-RAY DIFFRACTION ; X-RAY EMISSION ANALYSIS ; X-RAY FLUORESCENCE ANALYSIS ; ZINC COMPOUNDS</subject><ispartof>Journal of applied physics, 2010-01, Vol.107 (1), p.013516-013516-6</ispartof><rights>2010 American Institute of Physics</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c346t-70ba46ab2e4d5d31f8d838cb5a7dfb02be53b9f71a2ee84f04fee34b3e7eabf03</citedby><cites>FETCH-LOGICAL-c346t-70ba46ab2e4d5d31f8d838cb5a7dfb02be53b9f71a2ee84f04fee34b3e7eabf03</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/jap/article-lookup/doi/10.1063/1.3273495$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>230,314,776,780,790,881,1553,4498,27901,27902,76126,76132</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/21476078$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Weber, A.</creatorcontrib><creatorcontrib>Mainz, R.</creatorcontrib><creatorcontrib>Schock, H. W.</creatorcontrib><title>On the Sn loss from thin films of the material system Cu-Zn-Sn-S in high vacuum</title><title>Journal of applied physics</title><description>In this paper the Sn loss from thin films of the material system Cu-Zn-Sn-S and the subsystems Cu-Sn-S and Sn-S in high vacuum is investigated. A combination of
in situ
x-ray diffractometry and x-ray fluorescence (XRF) at a synchrotron light source allowed identifying phases, which tend to decompose and evaporate a Sn-containing compound. On the basis of the XRF results a quantification of the Sn loss from the films during annealing experiments is presented. It can be shown that the evaporation rate from the different phases decreases according to the order
SnS
→
Cu
2
SnS
3
→
Cu
4
SnS
4
→
Cu
2
ZnSnS
4
. The phase SnS is assigned as the evaporating compound. The influence of an additional inert gas component on the Sn loss and on the formation of
Cu
2
ZnSnS
4
thin films is discussed.</description><subject>ANNEALING</subject><subject>CHALCOGENIDES</subject><subject>CHEMICAL ANALYSIS</subject><subject>COHERENT SCATTERING</subject><subject>COPPER COMPOUNDS</subject><subject>DEPOSITION</subject><subject>DIFFRACTION</subject><subject>ELEMENTS</subject><subject>EVAPORATION</subject><subject>HEAT TREATMENTS</subject><subject>INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY</subject><subject>LOSSES</subject><subject>MATERIALS</subject><subject>MATERIALS SCIENCE</subject><subject>METALS</subject><subject>NONDESTRUCTIVE ANALYSIS</subject><subject>PHASE STABILITY</subject><subject>PHASE STUDIES</subject><subject>PHASE TRANSFORMATIONS</subject><subject>SCATTERING</subject><subject>SEMICONDUCTOR MATERIALS</subject><subject>STABILITY</subject><subject>SULFIDES</subject><subject>SULFUR COMPOUNDS</subject><subject>SURFACE COATING</subject><subject>THIN FILMS</subject><subject>TIN</subject><subject>TIN COMPOUNDS</subject><subject>TIN SULFIDES</subject><subject>TRANSITION ELEMENT COMPOUNDS</subject><subject>VACUUM COATING</subject><subject>X-RAY DIFFRACTION</subject><subject>X-RAY EMISSION ANALYSIS</subject><subject>X-RAY FLUORESCENCE ANALYSIS</subject><subject>ZINC COMPOUNDS</subject><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2010</creationdate><recordtype>article</recordtype><recordid>eNp1kE1LxDAQhoMouK4e_AcBTx66Jk3apAcPsvgFCz2sXryEJJ3YSJtKkxX239u6exUGBuZ9eGEehK4pWVFSsju6YrlgvCpO0IISWWWiKMgpWhCS00xWojpHFzF-EUKpZNUC1XXAqQW8DbgbYsRuHPrp4AN2vusjHtxf3OsEo9cdjvuYoMfrXfYRsu00eEJb_9niH213u_4SnTndRbg67iV6f3p8W79km_r5df2wySzjZcoEMZqX2uTAm6Jh1MlGMmlNoUXjDMkNFMxUTlCdA0juCHcAjBsGArRxhC3RzaF3iMmraH0C29ohBLBJ5ZSLkgg5UbcHyo7TcyM49T36Xo97RYmafSmqjr4m9v7AzmU6-SH8D9dBTVbUNqhZmpqlsV9Ha3GJ</recordid><startdate>20100101</startdate><enddate>20100101</enddate><creator>Weber, A.</creator><creator>Mainz, R.</creator><creator>Schock, H. W.</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>OTOTI</scope></search><sort><creationdate>20100101</creationdate><title>On the Sn loss from thin films of the material system Cu-Zn-Sn-S in high vacuum</title><author>Weber, A. ; Mainz, R. ; Schock, H. W.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c346t-70ba46ab2e4d5d31f8d838cb5a7dfb02be53b9f71a2ee84f04fee34b3e7eabf03</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2010</creationdate><topic>ANNEALING</topic><topic>CHALCOGENIDES</topic><topic>CHEMICAL ANALYSIS</topic><topic>COHERENT SCATTERING</topic><topic>COPPER COMPOUNDS</topic><topic>DEPOSITION</topic><topic>DIFFRACTION</topic><topic>ELEMENTS</topic><topic>EVAPORATION</topic><topic>HEAT TREATMENTS</topic><topic>INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY</topic><topic>LOSSES</topic><topic>MATERIALS</topic><topic>MATERIALS SCIENCE</topic><topic>METALS</topic><topic>NONDESTRUCTIVE ANALYSIS</topic><topic>PHASE STABILITY</topic><topic>PHASE STUDIES</topic><topic>PHASE TRANSFORMATIONS</topic><topic>SCATTERING</topic><topic>SEMICONDUCTOR MATERIALS</topic><topic>STABILITY</topic><topic>SULFIDES</topic><topic>SULFUR COMPOUNDS</topic><topic>SURFACE COATING</topic><topic>THIN FILMS</topic><topic>TIN</topic><topic>TIN COMPOUNDS</topic><topic>TIN SULFIDES</topic><topic>TRANSITION ELEMENT COMPOUNDS</topic><topic>VACUUM COATING</topic><topic>X-RAY DIFFRACTION</topic><topic>X-RAY EMISSION ANALYSIS</topic><topic>X-RAY FLUORESCENCE ANALYSIS</topic><topic>ZINC COMPOUNDS</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Weber, A.</creatorcontrib><creatorcontrib>Mainz, R.</creatorcontrib><creatorcontrib>Schock, H. W.</creatorcontrib><collection>CrossRef</collection><collection>OSTI.GOV</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Weber, A.</au><au>Mainz, R.</au><au>Schock, H. W.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>On the Sn loss from thin films of the material system Cu-Zn-Sn-S in high vacuum</atitle><jtitle>Journal of applied physics</jtitle><date>2010-01-01</date><risdate>2010</risdate><volume>107</volume><issue>1</issue><spage>013516</spage><epage>013516-6</epage><pages>013516-013516-6</pages><issn>0021-8979</issn><eissn>1089-7550</eissn><coden>JAPIAU</coden><abstract>In this paper the Sn loss from thin films of the material system Cu-Zn-Sn-S and the subsystems Cu-Sn-S and Sn-S in high vacuum is investigated. A combination of
in situ
x-ray diffractometry and x-ray fluorescence (XRF) at a synchrotron light source allowed identifying phases, which tend to decompose and evaporate a Sn-containing compound. On the basis of the XRF results a quantification of the Sn loss from the films during annealing experiments is presented. It can be shown that the evaporation rate from the different phases decreases according to the order
SnS
→
Cu
2
SnS
3
→
Cu
4
SnS
4
→
Cu
2
ZnSnS
4
. The phase SnS is assigned as the evaporating compound. The influence of an additional inert gas component on the Sn loss and on the formation of
Cu
2
ZnSnS
4
thin films is discussed.</abstract><cop>United States</cop><pub>American Institute of Physics</pub><doi>10.1063/1.3273495</doi><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0021-8979 |
| ispartof | Journal of applied physics, 2010-01, Vol.107 (1), p.013516-013516-6 |
| issn | 0021-8979 1089-7550 |
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| source | AIP Journals Complete; AIP Digital Archive; Alma/SFX Local Collection |
| subjects | ANNEALING CHALCOGENIDES CHEMICAL ANALYSIS COHERENT SCATTERING COPPER COMPOUNDS DEPOSITION DIFFRACTION ELEMENTS EVAPORATION HEAT TREATMENTS INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY LOSSES MATERIALS MATERIALS SCIENCE METALS NONDESTRUCTIVE ANALYSIS PHASE STABILITY PHASE STUDIES PHASE TRANSFORMATIONS SCATTERING SEMICONDUCTOR MATERIALS STABILITY SULFIDES SULFUR COMPOUNDS SURFACE COATING THIN FILMS TIN TIN COMPOUNDS TIN SULFIDES TRANSITION ELEMENT COMPOUNDS VACUUM COATING X-RAY DIFFRACTION X-RAY EMISSION ANALYSIS X-RAY FLUORESCENCE ANALYSIS ZINC COMPOUNDS |
| title | On the Sn loss from thin films of the material system Cu-Zn-Sn-S in high vacuum |
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