Impact of heavy hole-light hole coupling on optical selection rules in GaAs quantum dots

We report strong heavy hole-light hole mixing in GaAs quantum dots grown by droplet epitaxy. Using the neutral and charged exciton emission as a monitor we observe the direct consequence of quantum dot symmetry reduction in this strain free system. By fitting the polar diagram of the emission with s...

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Veröffentlicht in:	Applied physics letters 2010-08, Vol.97 (5), p.051111-051111-3
Hauptverfasser:	Belhadj, T., Amand, T., Kunold, A., Simon, C.-M., Kuroda, T., Abbarchi, M., Mano, T., Sakoda, K., Kunz, S., Marie, X., Urbaszek, B.
Format:	Artikel
Sprache:	eng
Schlagworte:	ARSENIC COMPOUNDS ARSENIDES ASYMMETRY CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY COUPLING CRYSTAL GROWTH CRYSTAL GROWTH METHODS DROPLETS EMISSION EPITAXY EXCITONS GALLIUM ARSENIDES GALLIUM COMPOUNDS HOLES LAYERS LUMINESCENCE MATERIALS MATERIALS SCIENCE MOLECULAR BEAM EPITAXY NANOSCIENCE AND NANOTECHNOLOGY NANOSTRUCTURES PARTICLES PHOTOLUMINESCENCE PHOTON EMISSION Physics PNICTIDES QUANTUM DOTS QUASI PARTICLES SELECTION RULES SEMICONDUCTOR MATERIALS STRAINS
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