Photorefractive grating near the surface of a cubic crystal subjected to an electric field
The structure of a photorefractive grating near the surface of a cubic crystal subjected to an external static electric field is considered in the approximation of a given distribution of photoexcited electrons in the conduction band. This approximation is used to analyse structures of the space-cha...
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Veröffentlicht in: | Quantum electronics (Woodbury, N.Y.) N.Y.), 1999-02, Vol.29 (2), p.185-188 |
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creator | Kirillov, A M Shandarov, S M |
description | The structure of a photorefractive grating near the surface of a cubic crystal subjected to an external static electric field is considered in the approximation of a given distribution of photoexcited electrons in the conduction band. This approximation is used to analyse structures of the space-charge field, of the elastic fields, and of perturbations of the permittivity tensor {Delta}{epsilon}-hat in the surface region of the crystal. It is shown that, when the grating vector is oriented along the [001] crystallographic axis, elastic displacements and diagonal elements of the tensor {Delta}{epsilon}-hat exist in the surface region but are absent in the bulk of the sample. The relative amplitudes of the elastic strains and of the permittivity perturbations are proportional to the applied field E{sub 0} and, in a crystal of Bi{sub 12}SiO{sub 20} , they can reach {approx}10{sup -6} and 10{sup -5} , respectively, for E{sub 0} = 10 kV cm{sup -1}. (laser applications and other topics in quantum electronics) |
doi_str_mv | 10.1070/QE1999v029n02ABEH001445 |
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This approximation is used to analyse structures of the space-charge field, of the elastic fields, and of perturbations of the permittivity tensor {Delta}{epsilon}-hat in the surface region of the crystal. It is shown that, when the grating vector is oriented along the [001] crystallographic axis, elastic displacements and diagonal elements of the tensor {Delta}{epsilon}-hat exist in the surface region but are absent in the bulk of the sample. The relative amplitudes of the elastic strains and of the permittivity perturbations are proportional to the applied field E{sub 0} and, in a crystal of Bi{sub 12}SiO{sub 20} , they can reach {approx}10{sup -6} and 10{sup -5} , respectively, for E{sub 0} = 10 kV cm{sup -1}. 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This approximation is used to analyse structures of the space-charge field, of the elastic fields, and of perturbations of the permittivity tensor {Delta}{epsilon}-hat in the surface region of the crystal. It is shown that, when the grating vector is oriented along the [001] crystallographic axis, elastic displacements and diagonal elements of the tensor {Delta}{epsilon}-hat exist in the surface region but are absent in the bulk of the sample. The relative amplitudes of the elastic strains and of the permittivity perturbations are proportional to the applied field E{sub 0} and, in a crystal of Bi{sub 12}SiO{sub 20} , they can reach {approx}10{sup -6} and 10{sup -5} , respectively, for E{sub 0} = 10 kV cm{sup -1}. 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This approximation is used to analyse structures of the space-charge field, of the elastic fields, and of perturbations of the permittivity tensor {Delta}{epsilon}-hat in the surface region of the crystal. It is shown that, when the grating vector is oriented along the [001] crystallographic axis, elastic displacements and diagonal elements of the tensor {Delta}{epsilon}-hat exist in the surface region but are absent in the bulk of the sample. The relative amplitudes of the elastic strains and of the permittivity perturbations are proportional to the applied field E{sub 0} and, in a crystal of Bi{sub 12}SiO{sub 20} , they can reach {approx}10{sup -6} and 10{sup -5} , respectively, for E{sub 0} = 10 kV cm{sup -1}. (laser applications and other topics in quantum electronics)</abstract><cop>United States</cop><pub>IOP Publishing</pub><doi>10.1070/QE1999v029n02ABEH001445</doi><tpages>4</tpages></addata></record> |
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subjects | AMPLITUDES APPROXIMATIONS CALCULATION METHODS CHALCOGENIDES CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY CRYSTAL LATTICES CRYSTAL STRUCTURE CRYSTALLOGRAPHY CRYSTALS CUBIC LATTICES DIELECTRIC PROPERTIES DISTURBANCES ELASTICITY ELECTRIC FIELDS ELECTRICAL PROPERTIES ELECTRONS ELEMENTARY PARTICLES FERMIONS GRATINGS LEPTONS MECHANICAL PROPERTIES OXIDES OXYGEN COMPOUNDS PERMITTIVITY PHYSICAL PROPERTIES SILICON COMPOUNDS SILICON OXIDES SPACE CHARGE STRAINS SURFACES |
title | Photorefractive grating near the surface of a cubic crystal subjected to an electric field |
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