Interband transitions in strained InGaAs/AlAsSb multiple-quantum-well structures

Room temperature photoreflectance (PR) was performed on strained In{sub x}Ga{sub 1-x}As/AlAsSb quantum wells (QWs) grown on InP substrates. We observed clear and well-resolved structures, which could be attributed to the interband optical transitions originating in the QWs. By comparing the transiti...

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Veröffentlicht in:	AIP conference proceedings 2009-01, Vol.1199 (1)
Hauptverfasser:	Mozume, T., Gozu, S.
Format:	Artikel
Sprache:	eng
Schlagworte:	ALUMINIUM ARSENIDES ALUMINIUM COMPOUNDS ANTIMONIDES ANTIMONY COMPOUNDS ARSENIC COMPOUNDS ARSENIDES COHERENT SCATTERING CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY CRYSTAL GROWTH METHODS DIFFRACTION ELECTRONIC STRUCTURE ENERGY LEVELS ENERGY RANGE ENERGY-LEVEL TRANSITIONS EPITAXY EV RANGE GALLIUM ARSENIDES GALLIUM COMPOUNDS INDIUM ARSENIDES INDIUM COMPOUNDS INDIUM PHOSPHIDES MATERIALS SCIENCE MOLECULAR BEAM EPITAXY NANOSCIENCE AND NANOTECHNOLOGY NANOSTRUCTURES OPTICAL PROPERTIES PHOSPHIDES PHOSPHORUS COMPOUNDS PHYSICAL PROPERTIES PNICTIDES QUANTUM WELLS SCATTERING SPECTRAL REFLECTANCE SUBSTRATES X-RAY DIFFRACTION
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