Irreversible altering of crystalline phase of phase-change Ge-Sb thin films
The stability of the crystalline phase of binary phase-change Ge{sub x}Sb{sub 1-x} films is investigated over a wide range of Ge content. From Raman spectroscopy we find the Ge-Sb crystalline structure irreversibly altered after exposure to a laser beam. We show that with increasing beam intensity/t...
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| Veröffentlicht in: | Applied physics letters 2010-03, Vol.96 (12) |
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| container_title | Applied physics letters |
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| creator | Krusin-Elbaum, L. Department of Physics, The City College of New York, New York 10031 Shakhvorostov, D. Cabral, C. Jr Raoux, S. Jordan-Sweet, J. L. NSLS, Brookhaven National Laboratory, Upton, New York 11973 |
| description | The stability of the crystalline phase of binary phase-change Ge{sub x}Sb{sub 1-x} films is investigated over a wide range of Ge content. From Raman spectroscopy we find the Ge-Sb crystalline structure irreversibly altered after exposure to a laser beam. We show that with increasing beam intensity/temperature Ge agglomerates and precipitates out in the amount growing with x. A simple empirical relation links Ge precipitation temperature T{sub Ge}{sup p} to the rate of change dT{sub cryst}/dx of crystallization, with the precipitation easiest on the mid-range x plateau, where T{sub cryst} is nearly constant. Our findings point to a preferable 15% < or approx. x < 50% window, that may achieve the desired cycling/archival properties of a phase-change cell. |
| doi_str_mv | 10.1063/1.3361656 |
| format | Article |
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Our findings point to a preferable 15% < or approx. x < 50% window, that may achieve the desired cycling/archival properties of a phase-change cell.</description><subject>ANTIMONY COMPOUNDS</subject><subject>CHEMISTRY</subject><subject>CRYSTAL STRUCTURE</subject><subject>CRYSTALLIZATION</subject><subject>GERMANIUM COMPOUNDS</subject><subject>LASER SPECTROSCOPY</subject><subject>LASERS</subject><subject>MATERIALS</subject><subject>MATERIALS SCIENCE</subject><subject>PHASE CHANGE MATERIALS</subject><subject>PHASE TRANSFORMATIONS</subject><subject>PHYSICAL CHEMISTRY</subject><subject>PRECIPITATION</subject><subject>RAMAN SPECTRA</subject><subject>RAMAN SPECTROSCOPY</subject><subject>SEPARATION PROCESSES</subject><subject>SPECTRA</subject><subject>SPECTROSCOPY</subject><subject>THIN FILMS</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2010</creationdate><recordtype>article</recordtype><recordid>eNqNis1qAjEURoO04LR14RsEXEdz53Yyupb6g0vdSwx3nEjMSG4QfHut-ACuvnMOnxBD0GPQBicwRjRgKtMTBei6Vggw_RCF1hqVmVXQF1_Mp4dWJWIhNuuU6EqJ_SGQtCFT8vEou0a6dONsQ_CR5KW1TP_xCcq1Nh5JLkltDzK3PsrGhzP_iM_GBqbBa7_FaPG3m69Ux9nv2flMrnVdjOTyvgT8rbGc4XuvO-TNQeQ</recordid><startdate>20100322</startdate><enddate>20100322</enddate><creator>Krusin-Elbaum, L.</creator><creator>Department of Physics, The City College of New York, New York 10031</creator><creator>Shakhvorostov, D.</creator><creator>Cabral, C. 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L.</au><au>NSLS, Brookhaven National Laboratory, Upton, New York 11973</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Irreversible altering of crystalline phase of phase-change Ge-Sb thin films</atitle><jtitle>Applied physics letters</jtitle><date>2010-03-22</date><risdate>2010</risdate><volume>96</volume><issue>12</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>The stability of the crystalline phase of binary phase-change Ge{sub x}Sb{sub 1-x} films is investigated over a wide range of Ge content. From Raman spectroscopy we find the Ge-Sb crystalline structure irreversibly altered after exposure to a laser beam. We show that with increasing beam intensity/temperature Ge agglomerates and precipitates out in the amount growing with x. A simple empirical relation links Ge precipitation temperature T{sub Ge}{sup p} to the rate of change dT{sub cryst}/dx of crystallization, with the precipitation easiest on the mid-range x plateau, where T{sub cryst} is nearly constant. Our findings point to a preferable 15% < or approx. x < 50% window, that may achieve the desired cycling/archival properties of a phase-change cell.</abstract><cop>United States</cop><doi>10.1063/1.3361656</doi></addata></record> |
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| ispartof | Applied physics letters, 2010-03, Vol.96 (12) |
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| language | eng |
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| source | AIP Journals Complete; AIP Digital Archive; Alma/SFX Local Collection |
| subjects | ANTIMONY COMPOUNDS CHEMISTRY CRYSTAL STRUCTURE CRYSTALLIZATION GERMANIUM COMPOUNDS LASER SPECTROSCOPY LASERS MATERIALS MATERIALS SCIENCE PHASE CHANGE MATERIALS PHASE TRANSFORMATIONS PHYSICAL CHEMISTRY PRECIPITATION RAMAN SPECTRA RAMAN SPECTROSCOPY SEPARATION PROCESSES SPECTRA SPECTROSCOPY THIN FILMS |
| title | Irreversible altering of crystalline phase of phase-change Ge-Sb thin films |
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