Strain-driven alignment of In nanocrystals on InGaAs quantum dot arrays and coupled plasmon-quantum dot emission
We report the alignment of In nanocrystals on top of linear InGaAs quantum dot (QD) arrays formed by self-organized anisotropic strain engineering on GaAs (100) by molecular beam epitaxy. The alignment is independent of a thin GaAs cap layer on the QDs revealing its origin is due to local strain rec...
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| Veröffentlicht in: | Applied physics letters 2010-03, Vol.96 (11), p.113101-113101-3 |
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| container_end_page | 113101-3 |
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| container_issue | 11 |
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| container_title | Applied physics letters |
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| creator | Urbańczyk, A. Hamhuis, G. J. Nötzel, R. |
| description | We report the alignment of In nanocrystals on top of linear InGaAs quantum dot (QD) arrays formed by self-organized anisotropic strain engineering on GaAs (100) by molecular beam epitaxy. The alignment is independent of a thin GaAs cap layer on the QDs revealing its origin is due to local strain recognition. This enables nanometer-scale precise lateral and vertical site registration between the QDs and the In nanocrystals and arrays in a single self-organizing formation process. The plasmon resonance of the In nanocrystals overlaps with the high-energy side of the QD emission leading to clear modification of the QD emission spectrum. |
| doi_str_mv | 10.1063/1.3358122 |
| format | Article |
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The plasmon resonance of the In nanocrystals overlaps with the high-energy side of the QD emission leading to clear modification of the QD emission spectrum.</description><subject>ANISOTROPY</subject><subject>ARSENIC COMPOUNDS</subject><subject>ARSENIDES</subject><subject>CRYSTAL GROWTH</subject><subject>CRYSTAL GROWTH METHODS</subject><subject>EMISSION SPECTRA</subject><subject>EPITAXY</subject><subject>GALLIUM ARSENIDES</subject><subject>GALLIUM COMPOUNDS</subject><subject>INDIUM ARSENIDES</subject><subject>INDIUM COMPOUNDS</subject><subject>LAYERS</subject><subject>MATERIALS</subject><subject>MOLECULAR BEAM EPITAXY</subject><subject>NANOSCIENCE AND NANOTECHNOLOGY</subject><subject>NANOSTRUCTURES</subject><subject>PLASMONS</subject><subject>PNICTIDES</subject><subject>QUANTUM DOTS</subject><subject>QUASI PARTICLES</subject><subject>SEMICONDUCTOR MATERIALS</subject><subject>SPECTRA</subject><subject>STRAINS</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2010</creationdate><recordtype>article</recordtype><recordid>eNp1kE1LAzEQhoMoWKsH_0HAk4etSSb70YtQitZCwYN6DmmS1chusiap0H_flO3Bi6dhhod3eB-EbimZUVLBA50BlA1l7AxNKKnrAihtztGEEAJFNS_pJbqK8TuvJQOYoOEtBWldoYP9NQ7Lzn663riEfYvXDjvpvAr7mGQXsXf5tJKLiH920qVdj7VPWIYg9xFLp7Hyu6EzGg-djL13xV_M9DZG6901umhzmLk5zSn6eH56X74Um9fVernYFAp4nQpZNcA42eq61q1uQFINreLlvOZKlYQSwtrGEOBzIJDLcCq3huiS88qYltQwRXdjro_JiqhsMupLeeeMSoLR_AQYy9T9SKngYwymFUOwvQx7QYk4ChVUnIRm9nFkj2Ey5S7_w6NVMVoVo1U4AF_hfgE</recordid><startdate>20100315</startdate><enddate>20100315</enddate><creator>Urbańczyk, A.</creator><creator>Hamhuis, G. 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| identifier | ISSN: 0003-6951 |
| ispartof | Applied physics letters, 2010-03, Vol.96 (11), p.113101-113101-3 |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_osti_scitechconnect_21347322 |
| source | AIP Journals Complete; AIP Digital Archive; Alma/SFX Local Collection |
| subjects | ANISOTROPY ARSENIC COMPOUNDS ARSENIDES CRYSTAL GROWTH CRYSTAL GROWTH METHODS EMISSION SPECTRA EPITAXY GALLIUM ARSENIDES GALLIUM COMPOUNDS INDIUM ARSENIDES INDIUM COMPOUNDS LAYERS MATERIALS MOLECULAR BEAM EPITAXY NANOSCIENCE AND NANOTECHNOLOGY NANOSTRUCTURES PLASMONS PNICTIDES QUANTUM DOTS QUASI PARTICLES SEMICONDUCTOR MATERIALS SPECTRA STRAINS |
| title | Strain-driven alignment of In nanocrystals on InGaAs quantum dot arrays and coupled plasmon-quantum dot emission |
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