Effect of vacuum ultraviolet and ultraviolet Irradiation on capacitance-voltage characteristics of low-k-porous organosilicate dielectrics
High frequency capacitance-voltage (C-V) measurements are used to determine the effects of vacuum ultraviolet (VUV) and ultraviolet (UV) irradiation on defect states in porous low-k organosilicate (SiCOH) dielectrics. The characteristics show that VUV photons depopulate trapped electrons from defect...
Gespeichert in:
| Veröffentlicht in: | Applied physics letters 2010-02, Vol.96 (5) |
|---|---|
| Hauptverfasser: | , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | 5 |
| container_start_page | |
| container_title | Applied physics letters |
| container_volume | 96 |
| creator | Sinha, H. Lauer, J. L. Nichols, M. T. Antonelli, G. A. Nishi, Y. Shohet, J. L. |
| description | High frequency capacitance-voltage (C-V) measurements are used to determine the effects of vacuum ultraviolet (VUV) and ultraviolet (UV) irradiation on defect states in porous low-k organosilicate (SiCOH) dielectrics. The characteristics show that VUV photons depopulate trapped electrons from defect states within the dielectric creating trapped positive charge. This is evidenced by a negative shift in the flat-band voltage of the C-V characteristic. UV irradiation reverses this effect by repopulating the defect states with electrons photoinjected from the silicon substrate. Thus, UV reduces the number of trapped positive charges in the dielectric and can effectively repair processing-induced damage. |
| doi_str_mv | 10.1063/1.3306729 |
| format | Article |
| fullrecord | <record><control><sourceid>crossref_osti_</sourceid><recordid>TN_cdi_osti_scitechconnect_21347263</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1063_1_3306729</sourcerecordid><originalsourceid>FETCH-LOGICAL-c257t-6ac41bd01a5a74cac5f9887eef0554d0cbf648ec037acdc15cbfdc9c0c056cc13</originalsourceid><addsrcrecordid>eNpVUMFKAzEUDKJgrR78gwVPHlKTzWaze5RStVDwoufl9W3SRtNNSbIVf8GvNqVehAePeQzzZoaQW85mnNXigc-EYLUq2zMy4UwpKjhvzsmEMSZo3Up-Sa5i_MhQlkJMyM_CGI2p8KY4AI7jrhhdCnCw3ulUwND_w8sQoLeQrB-KPAh7QJtgQE0P3iXY6AK3EACTDjYmi_Eo7PwX_aR7H_yYcdjA4KN1FiHporfa5f8hU6_JhQEX9c3fnpL3p8Xb_IWuXp-X88cVxVKqRGvAiq97xkGCqhBQmrZplNaGSVn1DNemrhqNTCjAHrnMhx5bZMhkjcjFlNyddH122MUcQOMW_TBkH13JRaXKWmTW_YmFwccYtOn2we4gfHecdceqO979VS1-AUk0dXA</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Effect of vacuum ultraviolet and ultraviolet Irradiation on capacitance-voltage characteristics of low-k-porous organosilicate dielectrics</title><source>AIP Journals Complete</source><source>AIP Digital Archive</source><source>Alma/SFX Local Collection</source><creator>Sinha, H. ; Lauer, J. L. ; Nichols, M. T. ; Antonelli, G. A. ; Nishi, Y. ; Shohet, J. L.</creator><creatorcontrib>Sinha, H. ; Lauer, J. L. ; Nichols, M. T. ; Antonelli, G. A. ; Nishi, Y. ; Shohet, J. L.</creatorcontrib><description>High frequency capacitance-voltage (C-V) measurements are used to determine the effects of vacuum ultraviolet (VUV) and ultraviolet (UV) irradiation on defect states in porous low-k organosilicate (SiCOH) dielectrics. The characteristics show that VUV photons depopulate trapped electrons from defect states within the dielectric creating trapped positive charge. This is evidenced by a negative shift in the flat-band voltage of the C-V characteristic. UV irradiation reverses this effect by repopulating the defect states with electrons photoinjected from the silicon substrate. Thus, UV reduces the number of trapped positive charges in the dielectric and can effectively repair processing-induced damage.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.3306729</identifier><language>eng</language><publisher>United States</publisher><subject>BOSONS ; CAPACITANCE ; DIELECTRIC MATERIALS ; ELECTRIC POTENTIAL ; ELECTRICAL PROPERTIES ; ELECTROMAGNETIC RADIATION ; ELECTRONS ; ELEMENTARY PARTICLES ; ELEMENTS ; FAR ULTRAVIOLET RADIATION ; FERMIONS ; LEPTONS ; MASSLESS PARTICLES ; MATERIALS ; MATERIALS SCIENCE ; ORGANIC COMPOUNDS ; PHOTONS ; PHYSICAL PROPERTIES ; POROUS MATERIALS ; RADIATIONS ; SEMIMETALS ; SILICON ; SUBSTRATES ; THIN FILMS ; TRAPPED ELECTRONS ; TRAPPING ; ULTRAVIOLET RADIATION</subject><ispartof>Applied physics letters, 2010-02, Vol.96 (5)</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c257t-6ac41bd01a5a74cac5f9887eef0554d0cbf648ec037acdc15cbfdc9c0c056cc13</citedby><cites>FETCH-LOGICAL-c257t-6ac41bd01a5a74cac5f9887eef0554d0cbf648ec037acdc15cbfdc9c0c056cc13</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,314,780,784,885,27924,27925</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/21347263$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Sinha, H.</creatorcontrib><creatorcontrib>Lauer, J. L.</creatorcontrib><creatorcontrib>Nichols, M. T.</creatorcontrib><creatorcontrib>Antonelli, G. A.</creatorcontrib><creatorcontrib>Nishi, Y.</creatorcontrib><creatorcontrib>Shohet, J. L.</creatorcontrib><title>Effect of vacuum ultraviolet and ultraviolet Irradiation on capacitance-voltage characteristics of low-k-porous organosilicate dielectrics</title><title>Applied physics letters</title><description>High frequency capacitance-voltage (C-V) measurements are used to determine the effects of vacuum ultraviolet (VUV) and ultraviolet (UV) irradiation on defect states in porous low-k organosilicate (SiCOH) dielectrics. The characteristics show that VUV photons depopulate trapped electrons from defect states within the dielectric creating trapped positive charge. This is evidenced by a negative shift in the flat-band voltage of the C-V characteristic. UV irradiation reverses this effect by repopulating the defect states with electrons photoinjected from the silicon substrate. Thus, UV reduces the number of trapped positive charges in the dielectric and can effectively repair processing-induced damage.</description><subject>BOSONS</subject><subject>CAPACITANCE</subject><subject>DIELECTRIC MATERIALS</subject><subject>ELECTRIC POTENTIAL</subject><subject>ELECTRICAL PROPERTIES</subject><subject>ELECTROMAGNETIC RADIATION</subject><subject>ELECTRONS</subject><subject>ELEMENTARY PARTICLES</subject><subject>ELEMENTS</subject><subject>FAR ULTRAVIOLET RADIATION</subject><subject>FERMIONS</subject><subject>LEPTONS</subject><subject>MASSLESS PARTICLES</subject><subject>MATERIALS</subject><subject>MATERIALS SCIENCE</subject><subject>ORGANIC COMPOUNDS</subject><subject>PHOTONS</subject><subject>PHYSICAL PROPERTIES</subject><subject>POROUS MATERIALS</subject><subject>RADIATIONS</subject><subject>SEMIMETALS</subject><subject>SILICON</subject><subject>SUBSTRATES</subject><subject>THIN FILMS</subject><subject>TRAPPED ELECTRONS</subject><subject>TRAPPING</subject><subject>ULTRAVIOLET RADIATION</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2010</creationdate><recordtype>article</recordtype><recordid>eNpVUMFKAzEUDKJgrR78gwVPHlKTzWaze5RStVDwoufl9W3SRtNNSbIVf8GvNqVehAePeQzzZoaQW85mnNXigc-EYLUq2zMy4UwpKjhvzsmEMSZo3Up-Sa5i_MhQlkJMyM_CGI2p8KY4AI7jrhhdCnCw3ulUwND_w8sQoLeQrB-KPAh7QJtgQE0P3iXY6AK3EACTDjYmi_Eo7PwX_aR7H_yYcdjA4KN1FiHporfa5f8hU6_JhQEX9c3fnpL3p8Xb_IWuXp-X88cVxVKqRGvAiq97xkGCqhBQmrZplNaGSVn1DNemrhqNTCjAHrnMhx5bZMhkjcjFlNyddH122MUcQOMW_TBkH13JRaXKWmTW_YmFwccYtOn2we4gfHecdceqO979VS1-AUk0dXA</recordid><startdate>20100201</startdate><enddate>20100201</enddate><creator>Sinha, H.</creator><creator>Lauer, J. L.</creator><creator>Nichols, M. T.</creator><creator>Antonelli, G. A.</creator><creator>Nishi, Y.</creator><creator>Shohet, J. L.</creator><scope>AAYXX</scope><scope>CITATION</scope><scope>OTOTI</scope></search><sort><creationdate>20100201</creationdate><title>Effect of vacuum ultraviolet and ultraviolet Irradiation on capacitance-voltage characteristics of low-k-porous organosilicate dielectrics</title><author>Sinha, H. ; Lauer, J. L. ; Nichols, M. T. ; Antonelli, G. A. ; Nishi, Y. ; Shohet, J. L.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c257t-6ac41bd01a5a74cac5f9887eef0554d0cbf648ec037acdc15cbfdc9c0c056cc13</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2010</creationdate><topic>BOSONS</topic><topic>CAPACITANCE</topic><topic>DIELECTRIC MATERIALS</topic><topic>ELECTRIC POTENTIAL</topic><topic>ELECTRICAL PROPERTIES</topic><topic>ELECTROMAGNETIC RADIATION</topic><topic>ELECTRONS</topic><topic>ELEMENTARY PARTICLES</topic><topic>ELEMENTS</topic><topic>FAR ULTRAVIOLET RADIATION</topic><topic>FERMIONS</topic><topic>LEPTONS</topic><topic>MASSLESS PARTICLES</topic><topic>MATERIALS</topic><topic>MATERIALS SCIENCE</topic><topic>ORGANIC COMPOUNDS</topic><topic>PHOTONS</topic><topic>PHYSICAL PROPERTIES</topic><topic>POROUS MATERIALS</topic><topic>RADIATIONS</topic><topic>SEMIMETALS</topic><topic>SILICON</topic><topic>SUBSTRATES</topic><topic>THIN FILMS</topic><topic>TRAPPED ELECTRONS</topic><topic>TRAPPING</topic><topic>ULTRAVIOLET RADIATION</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Sinha, H.</creatorcontrib><creatorcontrib>Lauer, J. L.</creatorcontrib><creatorcontrib>Nichols, M. T.</creatorcontrib><creatorcontrib>Antonelli, G. A.</creatorcontrib><creatorcontrib>Nishi, Y.</creatorcontrib><creatorcontrib>Shohet, J. L.</creatorcontrib><collection>CrossRef</collection><collection>OSTI.GOV</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Sinha, H.</au><au>Lauer, J. L.</au><au>Nichols, M. T.</au><au>Antonelli, G. A.</au><au>Nishi, Y.</au><au>Shohet, J. L.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Effect of vacuum ultraviolet and ultraviolet Irradiation on capacitance-voltage characteristics of low-k-porous organosilicate dielectrics</atitle><jtitle>Applied physics letters</jtitle><date>2010-02-01</date><risdate>2010</risdate><volume>96</volume><issue>5</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>High frequency capacitance-voltage (C-V) measurements are used to determine the effects of vacuum ultraviolet (VUV) and ultraviolet (UV) irradiation on defect states in porous low-k organosilicate (SiCOH) dielectrics. The characteristics show that VUV photons depopulate trapped electrons from defect states within the dielectric creating trapped positive charge. This is evidenced by a negative shift in the flat-band voltage of the C-V characteristic. UV irradiation reverses this effect by repopulating the defect states with electrons photoinjected from the silicon substrate. Thus, UV reduces the number of trapped positive charges in the dielectric and can effectively repair processing-induced damage.</abstract><cop>United States</cop><doi>10.1063/1.3306729</doi></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0003-6951 |
| ispartof | Applied physics letters, 2010-02, Vol.96 (5) |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_osti_scitechconnect_21347263 |
| source | AIP Journals Complete; AIP Digital Archive; Alma/SFX Local Collection |
| subjects | BOSONS CAPACITANCE DIELECTRIC MATERIALS ELECTRIC POTENTIAL ELECTRICAL PROPERTIES ELECTROMAGNETIC RADIATION ELECTRONS ELEMENTARY PARTICLES ELEMENTS FAR ULTRAVIOLET RADIATION FERMIONS LEPTONS MASSLESS PARTICLES MATERIALS MATERIALS SCIENCE ORGANIC COMPOUNDS PHOTONS PHYSICAL PROPERTIES POROUS MATERIALS RADIATIONS SEMIMETALS SILICON SUBSTRATES THIN FILMS TRAPPED ELECTRONS TRAPPING ULTRAVIOLET RADIATION |
| title | Effect of vacuum ultraviolet and ultraviolet Irradiation on capacitance-voltage characteristics of low-k-porous organosilicate dielectrics |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-29T13%3A06%3A12IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref_osti_&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Effect%20of%20vacuum%20ultraviolet%20and%20ultraviolet%20Irradiation%20on%20capacitance-voltage%20characteristics%20of%20low-k-porous%20organosilicate%20dielectrics&rft.jtitle=Applied%20physics%20letters&rft.au=Sinha,%20H.&rft.date=2010-02-01&rft.volume=96&rft.issue=5&rft.issn=0003-6951&rft.eissn=1077-3118&rft_id=info:doi/10.1063/1.3306729&rft_dat=%3Ccrossref_osti_%3E10_1063_1_3306729%3C/crossref_osti_%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |