The light stability of microcrystalline silicon thin films deposited by VHF–PECVD method
Microcrystalline silicon thin film is deposited under different conditions by plasma enhanced chemical vapor deposition. The light stability with different crystallinity and grain size is studied, and the growth mechanism is analyzed using the scaling behavior of roughening surface evolution. Degrad...
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| Veröffentlicht in: | Solar energy 2010-08, Vol.84 (8), p.1337-1341 |
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| creator | Chen, Yongsheng Gu, Jinhua Xu, Yanhua Lu, Jingxiao Yang, Shi-e Gao, Xiaoyong |
| description | Microcrystalline silicon thin film is deposited under different conditions by plasma enhanced chemical vapor deposition. The light stability with different crystallinity and grain size is studied, and the growth mechanism is analyzed using the scaling behavior of roughening surface evolution. Degradation of photoconductivity mainly depends on crystallinity and grain size, but fundamentally, on the growth mechanism. Materials with high crystallinity and large grain size are more stable under light soaking. With the increasing of deposition pressure and input power, growth process transfers to zero diffusion limit growth mechanism, and films deposited present less grain size and poor light stability. |
| doi_str_mv | 10.1016/j.solener.2010.03.027 |
| format | Article |
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The light stability with different crystallinity and grain size is studied, and the growth mechanism is analyzed using the scaling behavior of roughening surface evolution. Degradation of photoconductivity mainly depends on crystallinity and grain size, but fundamentally, on the growth mechanism. Materials with high crystallinity and large grain size are more stable under light soaking. 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With the increasing of deposition pressure and input power, growth process transfers to zero diffusion limit growth mechanism, and films deposited present less grain size and poor light stability.</description><subject>CHEMICAL VAPOR DEPOSITION</subject><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>CRYSTAL GROWTH</subject><subject>CRYSTAL STRUCTURE</subject><subject>Crystals</subject><subject>DIFFUSION</subject><subject>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</subject><subject>Electronic transport phenomena in thin films and low-dimensional structures</subject><subject>Exact sciences and technology</subject><subject>GRAIN SIZE</subject><subject>Light induced degradation</subject><subject>MATERIALS SCIENCE</subject><subject>MHZ RANGE</subject><subject>Microcrystalline silicon</subject><subject>Photoconduction and photovoltaic effects; photodielectric effects</subject><subject>PHOTOCONDUCTIVITY</subject><subject>Physics</subject><subject>PLASMA</subject><subject>PRESSURE DEPENDENCE</subject><subject>SCALING LAWS</subject><subject>SILICON</subject><subject>SOLAR ENERGY</subject><subject>STABILITY</subject><subject>SURFACES</subject><subject>Thin film</subject><subject>THIN FILMS</subject><subject>VISIBLE RADIATION</subject><issn>0038-092X</issn><issn>1471-1257</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2010</creationdate><recordtype>article</recordtype><recordid>eNqFkcGKFDEQhoMoOK4-ghAU8dRjJenupE8i464rLOhhXcRLSKcTO0M6GZOMMDffwTf0Scw4gwcv5hKofPWn_voRekpgTYD0r7brHL0JJq0p1BqwNVB-D61Iy0lDaMfvoxUAEw0M9PND9CjnLQDhRPAV-nI7G-zd17ngXNTovCsHHC1enE5Rp0Mteu-Cwbk-6RhwmV3A1vkl48nsYnbFTHg84Lvrq18_fn683Ny9xYspc5weowdW-WyenO8L9Onq8nZz3dx8ePd-8-am0S3tSzMOo7IDOZ7BkFEwqjVXk2JWqx7YRAQFqnsOnSKCjUz3HbRWtFZDJ8wwsgv0_KQbc3Ey6zqRnuuowegiKWGMC95V6uWJ2qX4bW9ykYvL2nivgon7LAcioKUAtJLP_iG3cZ9CtSB74LTr-j9y3Qmqa8o5GSt3yS0qHSQBeUxFbuU5FXlMRQKTNZXa9-IsrrJW3iYVtMt_mymDlgwtqdzrE2fq5r67qlKNmaDN5NLR1xTdf376DSFQpSY</recordid><startdate>20100801</startdate><enddate>20100801</enddate><creator>Chen, Yongsheng</creator><creator>Gu, Jinhua</creator><creator>Xu, Yanhua</creator><creator>Lu, Jingxiao</creator><creator>Yang, Shi-e</creator><creator>Gao, Xiaoyong</creator><general>Elsevier Ltd</general><general>Elsevier</general><general>Pergamon Press Inc</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7ST</scope><scope>8FD</scope><scope>C1K</scope><scope>FR3</scope><scope>KR7</scope><scope>L7M</scope><scope>SOI</scope><scope>OTOTI</scope></search><sort><creationdate>20100801</creationdate><title>The light stability of microcrystalline silicon thin films deposited by VHF–PECVD method</title><author>Chen, Yongsheng ; Gu, Jinhua ; Xu, Yanhua ; Lu, Jingxiao ; Yang, Shi-e ; Gao, Xiaoyong</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c426t-b9baf9111119e1b832cc7ada3fca603d18202c6705a183b3c6504f84fc058e9b3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2010</creationdate><topic>CHEMICAL VAPOR DEPOSITION</topic><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>CRYSTAL GROWTH</topic><topic>CRYSTAL STRUCTURE</topic><topic>Crystals</topic><topic>DIFFUSION</topic><topic>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</topic><topic>Electronic transport phenomena in thin films and low-dimensional structures</topic><topic>Exact sciences and technology</topic><topic>GRAIN SIZE</topic><topic>Light induced degradation</topic><topic>MATERIALS SCIENCE</topic><topic>MHZ RANGE</topic><topic>Microcrystalline silicon</topic><topic>Photoconduction and photovoltaic effects; photodielectric effects</topic><topic>PHOTOCONDUCTIVITY</topic><topic>Physics</topic><topic>PLASMA</topic><topic>PRESSURE DEPENDENCE</topic><topic>SCALING LAWS</topic><topic>SILICON</topic><topic>SOLAR ENERGY</topic><topic>STABILITY</topic><topic>SURFACES</topic><topic>Thin film</topic><topic>THIN FILMS</topic><topic>VISIBLE RADIATION</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Chen, Yongsheng</creatorcontrib><creatorcontrib>Gu, Jinhua</creatorcontrib><creatorcontrib>Xu, Yanhua</creatorcontrib><creatorcontrib>Lu, Jingxiao</creatorcontrib><creatorcontrib>Yang, Shi-e</creatorcontrib><creatorcontrib>Gao, Xiaoyong</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Environment Abstracts</collection><collection>Technology Research Database</collection><collection>Environmental Sciences and Pollution Management</collection><collection>Engineering Research Database</collection><collection>Civil Engineering Abstracts</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Environment Abstracts</collection><collection>OSTI.GOV</collection><jtitle>Solar energy</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Chen, Yongsheng</au><au>Gu, Jinhua</au><au>Xu, Yanhua</au><au>Lu, Jingxiao</au><au>Yang, Shi-e</au><au>Gao, Xiaoyong</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>The light stability of microcrystalline silicon thin films deposited by VHF–PECVD method</atitle><jtitle>Solar energy</jtitle><date>2010-08-01</date><risdate>2010</risdate><volume>84</volume><issue>8</issue><spage>1337</spage><epage>1341</epage><pages>1337-1341</pages><issn>0038-092X</issn><eissn>1471-1257</eissn><coden>SRENA4</coden><abstract>Microcrystalline silicon thin film is deposited under different conditions by plasma enhanced chemical vapor deposition. The light stability with different crystallinity and grain size is studied, and the growth mechanism is analyzed using the scaling behavior of roughening surface evolution. Degradation of photoconductivity mainly depends on crystallinity and grain size, but fundamentally, on the growth mechanism. Materials with high crystallinity and large grain size are more stable under light soaking. With the increasing of deposition pressure and input power, growth process transfers to zero diffusion limit growth mechanism, and films deposited present less grain size and poor light stability.</abstract><cop>Kidlington</cop><pub>Elsevier Ltd</pub><doi>10.1016/j.solener.2010.03.027</doi><tpages>5</tpages></addata></record> |
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| subjects | CHEMICAL VAPOR DEPOSITION Condensed matter: electronic structure, electrical, magnetic, and optical properties CRYSTAL GROWTH CRYSTAL STRUCTURE Crystals DIFFUSION Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Electronic transport phenomena in thin films and low-dimensional structures Exact sciences and technology GRAIN SIZE Light induced degradation MATERIALS SCIENCE MHZ RANGE Microcrystalline silicon Photoconduction and photovoltaic effects photodielectric effects PHOTOCONDUCTIVITY Physics PLASMA PRESSURE DEPENDENCE SCALING LAWS SILICON SOLAR ENERGY STABILITY SURFACES Thin film THIN FILMS VISIBLE RADIATION |
| title | The light stability of microcrystalline silicon thin films deposited by VHF–PECVD method |
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