Vacancy trapping mechanism for hydrogen bubble formation in metal

We reveal the microscopic vacancy trapping mechanism for H bubble formation in W based on first-principles calculations of the energetics of H-vacancy interaction and the kinetics of H segregation. Vacancy provides an isosurface of optimal charge density that induces collective H binding on its inte...

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Veröffentlicht in:Physical review. B, Condensed matter and materials physics Condensed matter and materials physics, 2009-05, Vol.79 (17), Article 172103
Hauptverfasser: Liu, Yue-Lin, Zhang, Ying, Zhou, Hong-Bo, Lu, Guang-Hong, Liu, Feng, Luo, G.-N.
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container_title Physical review. B, Condensed matter and materials physics
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creator Liu, Yue-Lin
Zhang, Ying
Zhou, Hong-Bo
Lu, Guang-Hong
Liu, Feng
Luo, G.-N.
description We reveal the microscopic vacancy trapping mechanism for H bubble formation in W based on first-principles calculations of the energetics of H-vacancy interaction and the kinetics of H segregation. Vacancy provides an isosurface of optimal charge density that induces collective H binding on its internal surface, a prerequisite for the formation of H{sub 2} molecule and nucleation of H bubble inside the vacancy. The critical H density on the vacancy surface before the H{sub 2} formation is found to be 10{sup 19}-10{sup 20} H atoms per m{sup 2}. We believe that such mechanism is generally applicable for H bubble formation in metals and metal alloys.
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fullrecord <record><control><sourceid>crossref_osti_</sourceid><recordid>TN_cdi_osti_scitechconnect_21304936</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1103_PhysRevB_79_172103</sourcerecordid><originalsourceid>FETCH-LOGICAL-c390t-2bcffb1e6809b31a9844112db51ec4d3aeadaa1ef4f0902ffc1d42fae324b0373</originalsourceid><addsrcrecordid>eNo1kFtLAzEQhYMoWC9_wKcFn7fOJNlu81iLNygoouJbmGSTdqWbLUkU9t-7pfp0hsPHcPgYu0KYIoK4edkM6dX93E5rNcWaj9URm2BVQclF9Xk83qDmJSDHU3aW0hcASiX5hC0-yFKwQ5Ej7XZtWBedsxsKbeoK38diMzSxX7tQmG9jtm7fdZTbPhRtGNFM2wt24mmb3OVfnrP3-7u35WO5en54Wi5WpRUKcsmN9d6gm81BGYGk5lIi8sZU6KxsBDlqiNB56UEB995iI7knJ7g0IGpxzq4Pf_uUW51sm8ehtg_B2aw5CpBKzEaKHygb-5Si83oX247ioBH0XpX-V6VrpQ-qxC-mS181</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Vacancy trapping mechanism for hydrogen bubble formation in metal</title><source>American Physical Society Journals</source><creator>Liu, Yue-Lin ; Zhang, Ying ; Zhou, Hong-Bo ; Lu, Guang-Hong ; Liu, Feng ; Luo, G.-N.</creator><creatorcontrib>Liu, Yue-Lin ; Zhang, Ying ; Zhou, Hong-Bo ; Lu, Guang-Hong ; Liu, Feng ; Luo, G.-N.</creatorcontrib><description>We reveal the microscopic vacancy trapping mechanism for H bubble formation in W based on first-principles calculations of the energetics of H-vacancy interaction and the kinetics of H segregation. Vacancy provides an isosurface of optimal charge density that induces collective H binding on its internal surface, a prerequisite for the formation of H{sub 2} molecule and nucleation of H bubble inside the vacancy. The critical H density on the vacancy surface before the H{sub 2} formation is found to be 10{sup 19}-10{sup 20} H atoms per m{sup 2}. We believe that such mechanism is generally applicable for H bubble formation in metals and metal alloys.</description><identifier>ISSN: 1098-0121</identifier><identifier>EISSN: 1550-235X</identifier><identifier>DOI: 10.1103/PhysRevB.79.172103</identifier><language>eng</language><publisher>United States</publisher><subject>ALLOYS ; ATOMIC AND MOLECULAR PHYSICS ; ATOMS ; BUBBLES ; CHARGE DENSITY ; CRYSTALS ; DENSITY ; HYDROGEN ; HYDROGEN STORAGE ; INTERACTIONS ; KINETICS ; MOLECULES ; NUCLEATION ; SEGREGATION ; SIMULATION ; SURFACES ; TRAPPING ; TUNGSTEN ; VACANCIES</subject><ispartof>Physical review. B, Condensed matter and materials physics, 2009-05, Vol.79 (17), Article 172103</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c390t-2bcffb1e6809b31a9844112db51ec4d3aeadaa1ef4f0902ffc1d42fae324b0373</citedby><cites>FETCH-LOGICAL-c390t-2bcffb1e6809b31a9844112db51ec4d3aeadaa1ef4f0902ffc1d42fae324b0373</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,314,777,781,882,2863,2864,27905,27906</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/21304936$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Liu, Yue-Lin</creatorcontrib><creatorcontrib>Zhang, Ying</creatorcontrib><creatorcontrib>Zhou, Hong-Bo</creatorcontrib><creatorcontrib>Lu, Guang-Hong</creatorcontrib><creatorcontrib>Liu, Feng</creatorcontrib><creatorcontrib>Luo, G.-N.</creatorcontrib><title>Vacancy trapping mechanism for hydrogen bubble formation in metal</title><title>Physical review. B, Condensed matter and materials physics</title><description>We reveal the microscopic vacancy trapping mechanism for H bubble formation in W based on first-principles calculations of the energetics of H-vacancy interaction and the kinetics of H segregation. Vacancy provides an isosurface of optimal charge density that induces collective H binding on its internal surface, a prerequisite for the formation of H{sub 2} molecule and nucleation of H bubble inside the vacancy. The critical H density on the vacancy surface before the H{sub 2} formation is found to be 10{sup 19}-10{sup 20} H atoms per m{sup 2}. We believe that such mechanism is generally applicable for H bubble formation in metals and metal alloys.</description><subject>ALLOYS</subject><subject>ATOMIC AND MOLECULAR PHYSICS</subject><subject>ATOMS</subject><subject>BUBBLES</subject><subject>CHARGE DENSITY</subject><subject>CRYSTALS</subject><subject>DENSITY</subject><subject>HYDROGEN</subject><subject>HYDROGEN STORAGE</subject><subject>INTERACTIONS</subject><subject>KINETICS</subject><subject>MOLECULES</subject><subject>NUCLEATION</subject><subject>SEGREGATION</subject><subject>SIMULATION</subject><subject>SURFACES</subject><subject>TRAPPING</subject><subject>TUNGSTEN</subject><subject>VACANCIES</subject><issn>1098-0121</issn><issn>1550-235X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2009</creationdate><recordtype>article</recordtype><recordid>eNo1kFtLAzEQhYMoWC9_wKcFn7fOJNlu81iLNygoouJbmGSTdqWbLUkU9t-7pfp0hsPHcPgYu0KYIoK4edkM6dX93E5rNcWaj9URm2BVQclF9Xk83qDmJSDHU3aW0hcASiX5hC0-yFKwQ5Ej7XZtWBedsxsKbeoK38diMzSxX7tQmG9jtm7fdZTbPhRtGNFM2wt24mmb3OVfnrP3-7u35WO5en54Wi5WpRUKcsmN9d6gm81BGYGk5lIi8sZU6KxsBDlqiNB56UEB995iI7knJ7g0IGpxzq4Pf_uUW51sm8ehtg_B2aw5CpBKzEaKHygb-5Si83oX247ioBH0XpX-V6VrpQ-qxC-mS181</recordid><startdate>20090501</startdate><enddate>20090501</enddate><creator>Liu, Yue-Lin</creator><creator>Zhang, Ying</creator><creator>Zhou, Hong-Bo</creator><creator>Lu, Guang-Hong</creator><creator>Liu, Feng</creator><creator>Luo, G.-N.</creator><scope>AAYXX</scope><scope>CITATION</scope><scope>OTOTI</scope></search><sort><creationdate>20090501</creationdate><title>Vacancy trapping mechanism for hydrogen bubble formation in metal</title><author>Liu, Yue-Lin ; Zhang, Ying ; Zhou, Hong-Bo ; Lu, Guang-Hong ; Liu, Feng ; Luo, G.-N.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c390t-2bcffb1e6809b31a9844112db51ec4d3aeadaa1ef4f0902ffc1d42fae324b0373</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2009</creationdate><topic>ALLOYS</topic><topic>ATOMIC AND MOLECULAR PHYSICS</topic><topic>ATOMS</topic><topic>BUBBLES</topic><topic>CHARGE DENSITY</topic><topic>CRYSTALS</topic><topic>DENSITY</topic><topic>HYDROGEN</topic><topic>HYDROGEN STORAGE</topic><topic>INTERACTIONS</topic><topic>KINETICS</topic><topic>MOLECULES</topic><topic>NUCLEATION</topic><topic>SEGREGATION</topic><topic>SIMULATION</topic><topic>SURFACES</topic><topic>TRAPPING</topic><topic>TUNGSTEN</topic><topic>VACANCIES</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Liu, Yue-Lin</creatorcontrib><creatorcontrib>Zhang, Ying</creatorcontrib><creatorcontrib>Zhou, Hong-Bo</creatorcontrib><creatorcontrib>Lu, Guang-Hong</creatorcontrib><creatorcontrib>Liu, Feng</creatorcontrib><creatorcontrib>Luo, G.-N.</creatorcontrib><collection>CrossRef</collection><collection>OSTI.GOV</collection><jtitle>Physical review. B, Condensed matter and materials physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Liu, Yue-Lin</au><au>Zhang, Ying</au><au>Zhou, Hong-Bo</au><au>Lu, Guang-Hong</au><au>Liu, Feng</au><au>Luo, G.-N.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Vacancy trapping mechanism for hydrogen bubble formation in metal</atitle><jtitle>Physical review. B, Condensed matter and materials physics</jtitle><date>2009-05-01</date><risdate>2009</risdate><volume>79</volume><issue>17</issue><artnum>172103</artnum><issn>1098-0121</issn><eissn>1550-235X</eissn><abstract>We reveal the microscopic vacancy trapping mechanism for H bubble formation in W based on first-principles calculations of the energetics of H-vacancy interaction and the kinetics of H segregation. Vacancy provides an isosurface of optimal charge density that induces collective H binding on its internal surface, a prerequisite for the formation of H{sub 2} molecule and nucleation of H bubble inside the vacancy. The critical H density on the vacancy surface before the H{sub 2} formation is found to be 10{sup 19}-10{sup 20} H atoms per m{sup 2}. We believe that such mechanism is generally applicable for H bubble formation in metals and metal alloys.</abstract><cop>United States</cop><doi>10.1103/PhysRevB.79.172103</doi></addata></record>
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subjects ALLOYS
ATOMIC AND MOLECULAR PHYSICS
ATOMS
BUBBLES
CHARGE DENSITY
CRYSTALS
DENSITY
HYDROGEN
HYDROGEN STORAGE
INTERACTIONS
KINETICS
MOLECULES
NUCLEATION
SEGREGATION
SIMULATION
SURFACES
TRAPPING
TUNGSTEN
VACANCIES
title Vacancy trapping mechanism for hydrogen bubble formation in metal
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-19T18%3A07%3A14IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref_osti_&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Vacancy%20trapping%20mechanism%20for%20hydrogen%20bubble%20formation%20in%20metal&rft.jtitle=Physical%20review.%20B,%20Condensed%20matter%20and%20materials%20physics&rft.au=Liu,%20Yue-Lin&rft.date=2009-05-01&rft.volume=79&rft.issue=17&rft.artnum=172103&rft.issn=1098-0121&rft.eissn=1550-235X&rft_id=info:doi/10.1103/PhysRevB.79.172103&rft_dat=%3Ccrossref_osti_%3E10_1103_PhysRevB_79_172103%3C/crossref_osti_%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true