Near-infrared intersubband absorption in molecular-beam epitaxy-grown lattice-matched InAlN/GaN superlattices
Strong near-infrared intersubband absorption is observed directly at room temperature in silicon-doped lattice-matched InAlN/GaN superlattices grown by molecular-beam epitaxy on GaN templates grown by hydride vapor-phase epitaxy. X-ray diffraction characterization of the heterostructures indicates e...
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| Veröffentlicht in: | Applied physics letters 2009-04, Vol.94 (16), p.161111-161111-3 |
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| container_end_page | 161111-3 |
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| container_issue | 16 |
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| container_title | Applied physics letters |
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| creator | Malis, O. Edmunds, C. Manfra, M. J. Sivco, D. L. |
| description | Strong near-infrared intersubband absorption is observed directly at room temperature in silicon-doped lattice-matched InAlN/GaN superlattices grown by molecular-beam epitaxy on GaN templates grown by hydride vapor-phase epitaxy. X-ray diffraction characterization of the heterostructures indicates excellent layer thickness uniformity and low interface roughness. For 2-4.5 nm quantum wells, the intersubband transition energies span the technologically relevant range between 2.3 and
2.9
μ
m
. The experimental results are in good agreement with calculations of the transition energies using a conduction band offset of 1 eV and spontaneous polarization of 3 MV/cm. |
| doi_str_mv | 10.1063/1.3120551 |
| format | Article |
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2.9
μ
m
. The experimental results are in good agreement with calculations of the transition energies using a conduction band offset of 1 eV and spontaneous polarization of 3 MV/cm.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.3120551</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>United States: American Institute of Physics</publisher><subject>ABSORPTION ; ALUMINIUM COMPOUNDS ; CRYSTAL GROWTH ; DOPED MATERIALS ; GALLIUM NITRIDES ; HYDRIDES ; INDIUM COMPOUNDS ; LAYERS ; MATERIALS SCIENCE ; MOLECULAR BEAM EPITAXY ; QUANTUM WELLS ; ROUGHNESS ; SEMICONDUCTOR MATERIALS ; SILICON ; SUPERLATTICES ; TEMPERATURE RANGE 0273-0400 K ; THICKNESS ; VAPOR PHASE EPITAXY ; X-RAY DIFFRACTION</subject><ispartof>Applied physics letters, 2009-04, Vol.94 (16), p.161111-161111-3</ispartof><rights>2009 American Institute of Physics</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c378t-5b36698396debda4f4fc81a2dc91cd44f7fae50802e71c9e1d3363991ca064963</citedby><cites>FETCH-LOGICAL-c378t-5b36698396debda4f4fc81a2dc91cd44f7fae50802e71c9e1d3363991ca064963</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/apl/article-lookup/doi/10.1063/1.3120551$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>230,314,780,784,794,885,1559,4512,27924,27925,76256,76262</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/21294044$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Malis, O.</creatorcontrib><creatorcontrib>Edmunds, C.</creatorcontrib><creatorcontrib>Manfra, M. J.</creatorcontrib><creatorcontrib>Sivco, D. L.</creatorcontrib><title>Near-infrared intersubband absorption in molecular-beam epitaxy-grown lattice-matched InAlN/GaN superlattices</title><title>Applied physics letters</title><description>Strong near-infrared intersubband absorption is observed directly at room temperature in silicon-doped lattice-matched InAlN/GaN superlattices grown by molecular-beam epitaxy on GaN templates grown by hydride vapor-phase epitaxy. X-ray diffraction characterization of the heterostructures indicates excellent layer thickness uniformity and low interface roughness. For 2-4.5 nm quantum wells, the intersubband transition energies span the technologically relevant range between 2.3 and
2.9
μ
m
. The experimental results are in good agreement with calculations of the transition energies using a conduction band offset of 1 eV and spontaneous polarization of 3 MV/cm.</description><subject>ABSORPTION</subject><subject>ALUMINIUM COMPOUNDS</subject><subject>CRYSTAL GROWTH</subject><subject>DOPED MATERIALS</subject><subject>GALLIUM NITRIDES</subject><subject>HYDRIDES</subject><subject>INDIUM COMPOUNDS</subject><subject>LAYERS</subject><subject>MATERIALS SCIENCE</subject><subject>MOLECULAR BEAM EPITAXY</subject><subject>QUANTUM WELLS</subject><subject>ROUGHNESS</subject><subject>SEMICONDUCTOR MATERIALS</subject><subject>SILICON</subject><subject>SUPERLATTICES</subject><subject>TEMPERATURE RANGE 0273-0400 K</subject><subject>THICKNESS</subject><subject>VAPOR PHASE EPITAXY</subject><subject>X-RAY DIFFRACTION</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2009</creationdate><recordtype>article</recordtype><recordid>eNp1kEFLwzAYhoMoOKcH_0HBk4ds-Zo0bS7CGDoHY170HNI0dZE2LUmG7t_b0nn09PF-78N7eBC6B7IAwukSFhRSkmVwgWZA8hxTgOISzQghFHORwTW6CeFriFlK6Qy1e6M8tq72ypsqsS4aH45lqVyVqDJ0vo-2c8M_abvG6GMz0KVRbWJ6G9XPCX_67tsljYrRaoNbFfVh2Nm6VbNfbtQ-Ccfe-HMdbtFVrZpg7s53jj5ent_Xr3j3ttmuVzusaV5EnJWUc1FQwStTVorVrNYFqLTSAnTFWJ3XymSkIKnJQQsDFaWciqFUhDPB6Rw9TLtdiFYGbaPRB905Z3SUKaSCEcYG6nGitO9C8KaWvbet8icJRI42JcizzYF9mthxTI1O_odHpfJPqZyU0l-TFH29</recordid><startdate>20090420</startdate><enddate>20090420</enddate><creator>Malis, O.</creator><creator>Edmunds, C.</creator><creator>Manfra, M. J.</creator><creator>Sivco, D. L.</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>OTOTI</scope></search><sort><creationdate>20090420</creationdate><title>Near-infrared intersubband absorption in molecular-beam epitaxy-grown lattice-matched InAlN/GaN superlattices</title><author>Malis, O. ; Edmunds, C. ; Manfra, M. J. ; Sivco, D. L.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c378t-5b36698396debda4f4fc81a2dc91cd44f7fae50802e71c9e1d3363991ca064963</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2009</creationdate><topic>ABSORPTION</topic><topic>ALUMINIUM COMPOUNDS</topic><topic>CRYSTAL GROWTH</topic><topic>DOPED MATERIALS</topic><topic>GALLIUM NITRIDES</topic><topic>HYDRIDES</topic><topic>INDIUM COMPOUNDS</topic><topic>LAYERS</topic><topic>MATERIALS SCIENCE</topic><topic>MOLECULAR BEAM EPITAXY</topic><topic>QUANTUM WELLS</topic><topic>ROUGHNESS</topic><topic>SEMICONDUCTOR MATERIALS</topic><topic>SILICON</topic><topic>SUPERLATTICES</topic><topic>TEMPERATURE RANGE 0273-0400 K</topic><topic>THICKNESS</topic><topic>VAPOR PHASE EPITAXY</topic><topic>X-RAY DIFFRACTION</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Malis, O.</creatorcontrib><creatorcontrib>Edmunds, C.</creatorcontrib><creatorcontrib>Manfra, M. J.</creatorcontrib><creatorcontrib>Sivco, D. L.</creatorcontrib><collection>CrossRef</collection><collection>OSTI.GOV</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Malis, O.</au><au>Edmunds, C.</au><au>Manfra, M. J.</au><au>Sivco, D. L.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Near-infrared intersubband absorption in molecular-beam epitaxy-grown lattice-matched InAlN/GaN superlattices</atitle><jtitle>Applied physics letters</jtitle><date>2009-04-20</date><risdate>2009</risdate><volume>94</volume><issue>16</issue><spage>161111</spage><epage>161111-3</epage><pages>161111-161111-3</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>Strong near-infrared intersubband absorption is observed directly at room temperature in silicon-doped lattice-matched InAlN/GaN superlattices grown by molecular-beam epitaxy on GaN templates grown by hydride vapor-phase epitaxy. X-ray diffraction characterization of the heterostructures indicates excellent layer thickness uniformity and low interface roughness. For 2-4.5 nm quantum wells, the intersubband transition energies span the technologically relevant range between 2.3 and
2.9
μ
m
. The experimental results are in good agreement with calculations of the transition energies using a conduction band offset of 1 eV and spontaneous polarization of 3 MV/cm.</abstract><cop>United States</cop><pub>American Institute of Physics</pub><doi>10.1063/1.3120551</doi></addata></record> |
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| ispartof | Applied physics letters, 2009-04, Vol.94 (16), p.161111-161111-3 |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_osti_scitechconnect_21294044 |
| source | American Institute of Physics (AIP) Journals; AIP Digital Archive; Alma/SFX Local Collection |
| subjects | ABSORPTION ALUMINIUM COMPOUNDS CRYSTAL GROWTH DOPED MATERIALS GALLIUM NITRIDES HYDRIDES INDIUM COMPOUNDS LAYERS MATERIALS SCIENCE MOLECULAR BEAM EPITAXY QUANTUM WELLS ROUGHNESS SEMICONDUCTOR MATERIALS SILICON SUPERLATTICES TEMPERATURE RANGE 0273-0400 K THICKNESS VAPOR PHASE EPITAXY X-RAY DIFFRACTION |
| title | Near-infrared intersubband absorption in molecular-beam epitaxy-grown lattice-matched InAlN/GaN superlattices |
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