The temperature dependence of internal parameters of disc laser diodes InAs/InAsSbP

For disc lasers based on the InAs/InAsSbP heterostructure with a generation wavelength of 3.03–3.06 μm, the internal quantum yield of luminescence and rates of radiative and nonradiative recombination in a temperature range of 85–120 K are determined. It is established that as the temperature increa...

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Veröffentlicht in:	Semiconductors (Woodbury, N.Y.) N.Y.), 2009-04, Vol.43 (4), p.500-504
Hauptverfasser:	Kabanov, V. V., Lebiadok, E. V., Ryabtsev, A. G., Ryabtsev, G. I., Schemelev, M. A., Sherstnev, V. V., Astakhova, A. P., Yakovlev, Yu. P.
Format:	Artikel
Sprache:	eng
Schlagworte:	ANTIMONIDES INDIUM ARSENIDES LUMINESCENCE Magnetic Materials Magnetism MATERIALS SCIENCE PHONONS PHOSPHIDES Physics Physics and Astronomy Physics of Semiconductor Devices RECOMBINATION TEMPERATURE DEPENDENCE TEMPERATURE RANGE 0013-0065 K TEMPERATURE RANGE 0065-0273 K THRESHOLD CURRENT WAVELENGTHS
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