Mechanism of dislocation-governed charge transport in schottky diodes based on gallium nitride

A mechanism of charge transport in Au-TiB x - n -GaN Schottky diodes with a space charge region considerably exceeding the de Broglie wavelength in GaN is studied. Analysis of temperature dependences of current-voltage ( I–V ) characteristics of forward-biased Schottky barriers showed that, in the t...

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Veröffentlicht in:	Semiconductors (Woodbury, N.Y.) N.Y.), 2008-06, Vol.42 (6), p.689-693
Hauptverfasser:	Belyaev, A. E., Boltovets, N. S., Ivanov, V. N., Klad’ko, V. P., Konakova, R. V., Kudrik, Ya. Ya, Kuchuk, A. V., Milenin, V. V., Sveshnikov, Yu. N., Sheremet, V. N.
Format:	Artikel
Sprache:	eng
Schlagworte:	CHARGE TRANSPORT DE BROGLIE WAVELENGTH DISLOCATIONS ELECTRIC CONDUCTIVITY GALLIUM NITRIDES Interfaces Magnetic Materials Magnetism MATERIALS SCIENCE Physics Physics and Astronomy SCHOTTKY BARRIER DIODES Semiconductor Structures SPACE CHARGE Surfaces TEMPERATURE DEPENDENCE TEMPERATURE RANGE 0065-0273 K TEMPERATURE RANGE 0273-0400 K TUNNEL EFFECT X-RAY DIFFRACTION
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