Influence of electric field on the photoelectric effect in a Schottky barrier based on n-type cadmium diphosphide
The results of a study on photoelectric properties of a Schottky barrier based on n -type CdP 2 are considered. The effect of the barrier electric field on photocurrents caused by photoelectron emission from metal and optical generation of excess charge carriers in the semiconductor was studied. It...
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| Veröffentlicht in: | Semiconductors (Woodbury, N.Y.) N.Y.), 2008-09, Vol.42 (9), p.1062-1068 |
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| container_issue | 9 |
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| container_title | Semiconductors (Woodbury, N.Y.) |
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| creator | Stamov, I. G. Tkachenko, D. V. |
| description | The results of a study on photoelectric properties of a Schottky barrier based on
n
-type CdP
2
are considered. The effect of the barrier electric field on photocurrents caused by photoelectron emission from metal and optical generation of excess charge carriers in the semiconductor was studied. It was found that the dependence of the photocurrent on the light-modulation frequency is controlled by level recharging times at the interfaces between the space-charge and quasi-neutrality regions and between semiconductor and metal. Good agreement between the calculated and experimental results was achieved. |
| doi_str_mv | 10.1134/S106378260809011X |
| format | Article |
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n
-type CdP
2
are considered. The effect of the barrier electric field on photocurrents caused by photoelectron emission from metal and optical generation of excess charge carriers in the semiconductor was studied. It was found that the dependence of the photocurrent on the light-modulation frequency is controlled by level recharging times at the interfaces between the space-charge and quasi-neutrality regions and between semiconductor and metal. Good agreement between the calculated and experimental results was achieved.</description><identifier>ISSN: 1063-7826</identifier><identifier>EISSN: 1090-6479</identifier><identifier>DOI: 10.1134/S106378260809011X</identifier><language>eng</language><publisher>Dordrecht: SP MAIK Nauka/Interperiodica</publisher><subject>CADMIUM PHOSPHIDES ; CHARGE CARRIERS ; Current carriers ; ELECTRIC FIELDS ; EMISSION ; Interfaces ; Magnetic Materials ; Magnetism ; MATERIALS SCIENCE ; PHOTOCURRENTS ; PHOTOELECTRIC EFFECT ; Photoelectric emission ; Photoelectricity ; Photoelectrons ; Physics ; Physics and Astronomy ; SCHOTTKY EFFECT ; SEMICONDUCTOR MATERIALS ; Semiconductor Structures ; Surfaces</subject><ispartof>Semiconductors (Woodbury, N.Y.), 2008-09, Vol.42 (9), p.1062-1068</ispartof><rights>Pleiades Publishing, Ltd. 2008</rights><rights>Pleiades Publishing, Ltd. 2008.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c344t-57e6c44b2fe598ad8256f00ba4f6432130c3dc8d7b3b598f31d276918285ae8f3</citedby><cites>FETCH-LOGICAL-c344t-57e6c44b2fe598ad8256f00ba4f6432130c3dc8d7b3b598f31d276918285ae8f3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1134/S106378260809011X$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1134/S106378260809011X$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>230,314,777,781,882,27905,27906,41469,42538,51300</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/21255618$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Stamov, I. G.</creatorcontrib><creatorcontrib>Tkachenko, D. V.</creatorcontrib><title>Influence of electric field on the photoelectric effect in a Schottky barrier based on n-type cadmium diphosphide</title><title>Semiconductors (Woodbury, N.Y.)</title><addtitle>Semiconductors</addtitle><description>The results of a study on photoelectric properties of a Schottky barrier based on
n
-type CdP
2
are considered. The effect of the barrier electric field on photocurrents caused by photoelectron emission from metal and optical generation of excess charge carriers in the semiconductor was studied. It was found that the dependence of the photocurrent on the light-modulation frequency is controlled by level recharging times at the interfaces between the space-charge and quasi-neutrality regions and between semiconductor and metal. Good agreement between the calculated and experimental results was achieved.</description><subject>CADMIUM PHOSPHIDES</subject><subject>CHARGE CARRIERS</subject><subject>Current carriers</subject><subject>ELECTRIC FIELDS</subject><subject>EMISSION</subject><subject>Interfaces</subject><subject>Magnetic Materials</subject><subject>Magnetism</subject><subject>MATERIALS SCIENCE</subject><subject>PHOTOCURRENTS</subject><subject>PHOTOELECTRIC EFFECT</subject><subject>Photoelectric emission</subject><subject>Photoelectricity</subject><subject>Photoelectrons</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><subject>SCHOTTKY EFFECT</subject><subject>SEMICONDUCTOR MATERIALS</subject><subject>Semiconductor Structures</subject><subject>Surfaces</subject><issn>1063-7826</issn><issn>1090-6479</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2008</creationdate><recordtype>article</recordtype><recordid>eNp1kEtPwzAQhCMEEqXwA7hZ4hzwK457RBWPSpU4FCRuUeKsiUtqp7Zz6L_HpYgeEKed1XwzWm2WXRN8SwjjdyuCBSslFVjiGSbk_SSbkKRywcvZ6V4Llu_98-wihDVOiCz4JNsurO5HsAqQ0wh6UNEbhbSBvkXOotgBGjoX3a8FWieFjEU1Wqlkxc8damrvDfg0A3znbB53AyBVtxszblBrUkkYOtPCZXam6z7A1c-cZm-PD6_z53z58rSY3y9zxTiPeVGCUJw3VEMxk3UraSE0xk3NteCMEoYVa5Vsy4Y1CdCMtLQUMyKpLGpI-zS7OfS6EE0VlImgOuWsTddXlNCiEEQeqcG77QghVms3epsOq6gQRXptyUiiyIFS3oXgQVeDN5va7yqCq_3_qz__Txl6yITE2g_wx-b_Q18cQ4cM</recordid><startdate>20080901</startdate><enddate>20080901</enddate><creator>Stamov, I. G.</creator><creator>Tkachenko, D. V.</creator><general>SP MAIK Nauka/Interperiodica</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>OTOTI</scope></search><sort><creationdate>20080901</creationdate><title>Influence of electric field on the photoelectric effect in a Schottky barrier based on n-type cadmium diphosphide</title><author>Stamov, I. G. ; Tkachenko, D. V.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c344t-57e6c44b2fe598ad8256f00ba4f6432130c3dc8d7b3b598f31d276918285ae8f3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2008</creationdate><topic>CADMIUM PHOSPHIDES</topic><topic>CHARGE CARRIERS</topic><topic>Current carriers</topic><topic>ELECTRIC FIELDS</topic><topic>EMISSION</topic><topic>Interfaces</topic><topic>Magnetic Materials</topic><topic>Magnetism</topic><topic>MATERIALS SCIENCE</topic><topic>PHOTOCURRENTS</topic><topic>PHOTOELECTRIC EFFECT</topic><topic>Photoelectric emission</topic><topic>Photoelectricity</topic><topic>Photoelectrons</topic><topic>Physics</topic><topic>Physics and Astronomy</topic><topic>SCHOTTKY EFFECT</topic><topic>SEMICONDUCTOR MATERIALS</topic><topic>Semiconductor Structures</topic><topic>Surfaces</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Stamov, I. G.</creatorcontrib><creatorcontrib>Tkachenko, D. V.</creatorcontrib><collection>CrossRef</collection><collection>OSTI.GOV</collection><jtitle>Semiconductors (Woodbury, N.Y.)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Stamov, I. G.</au><au>Tkachenko, D. V.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Influence of electric field on the photoelectric effect in a Schottky barrier based on n-type cadmium diphosphide</atitle><jtitle>Semiconductors (Woodbury, N.Y.)</jtitle><stitle>Semiconductors</stitle><date>2008-09-01</date><risdate>2008</risdate><volume>42</volume><issue>9</issue><spage>1062</spage><epage>1068</epage><pages>1062-1068</pages><issn>1063-7826</issn><eissn>1090-6479</eissn><abstract>The results of a study on photoelectric properties of a Schottky barrier based on
n
-type CdP
2
are considered. The effect of the barrier electric field on photocurrents caused by photoelectron emission from metal and optical generation of excess charge carriers in the semiconductor was studied. It was found that the dependence of the photocurrent on the light-modulation frequency is controlled by level recharging times at the interfaces between the space-charge and quasi-neutrality regions and between semiconductor and metal. Good agreement between the calculated and experimental results was achieved.</abstract><cop>Dordrecht</cop><pub>SP MAIK Nauka/Interperiodica</pub><doi>10.1134/S106378260809011X</doi><tpages>7</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 1063-7826 |
| ispartof | Semiconductors (Woodbury, N.Y.), 2008-09, Vol.42 (9), p.1062-1068 |
| issn | 1063-7826 1090-6479 |
| language | eng |
| recordid | cdi_osti_scitechconnect_21255618 |
| source | SpringerLink Journals |
| subjects | CADMIUM PHOSPHIDES CHARGE CARRIERS Current carriers ELECTRIC FIELDS EMISSION Interfaces Magnetic Materials Magnetism MATERIALS SCIENCE PHOTOCURRENTS PHOTOELECTRIC EFFECT Photoelectric emission Photoelectricity Photoelectrons Physics Physics and Astronomy SCHOTTKY EFFECT SEMICONDUCTOR MATERIALS Semiconductor Structures Surfaces |
| title | Influence of electric field on the photoelectric effect in a Schottky barrier based on n-type cadmium diphosphide |
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