Improvement of Contact Resistance with Molecular Ion Implantation

Basic characteristics of ClusterBoronTM (B18H22) implantation were investigated for improving contact resistance in DRAM devices. Generally, 49BF2 has been widely used for contact implant application in DRAM manufacturing because of its higher productivity compared to monomer boron (11B). However, b...

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Bibliographische Detailangaben
Hauptverfasser:	Lee, Kyung Won, Lee, Jin Ku, Oh, Jae Geun, Huh, Tae Hoon, Ju, Min Ae, Jeon, Seung Joon, Ku, Ja Chun, Park, Sung Ki, Kim, Steve, Yoon, Dae Ho, Ra, Geum Joo, Harris, Mark A, Reece, Ronald N
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	BORANES BORON BORON 11 BORON FLUORIDES BORON HYDRIDES CRYSTAL DEFECTS ELECTRON MICROSCOPES FLUORINE ION IMPLANTATION ION MICROPROBE ANALYSIS LAYERS MASS SPECTROSCOPY MATERIALS SCIENCE MOLECULAR IONS MONOMERS SHEETS THICKNESS TRANSMISSION ELECTRON MICROSCOPY
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