Boron Profile Sharpening in Ultra-Shallow p{sup +}-n Junction Produced by Plasma Immersion Ion Implantation from BF{sub 3} Plasma

We have investigated plasma immersion ion implantation (PI{sup 3}) of boron with energies of 500 eV (doses up to 2x10{sup 15} cm{sup -2}) from BF{sub 3} plasma with He pre-amorphizing implantation (PAI)(energy 3 keV, dose 5x10{sup 16} cm{sup -2}). Implanted samples were subjected to RTA (T = 900 to...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	AIP conference proceedings 2008-11, Vol.1066 (1)
Hauptverfasser:	Lukichev, V., Rudenko, K., Orlikovsky, A., Pustovit, A., Vyatkin, A.
Format:	Artikel
Sprache:	eng
Schlagworte:	ANNEALING BORON BORON FLUORIDES EV RANGE 100-1000 ION IMPLANTATION ION MICROPROBE ANALYSIS KEV RANGE 01-10 MASS SPECTROSCOPY MATERIALS SCIENCE P-N JUNCTIONS PLASMA PLASMA IMPURITIES
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!