Accurate Dose Control with Pressure Compensation System on Single-Wafer Ion Implanters

On ion implanters, dosimetry is generally controlled by monitoring an electrical current detected with Faraday cup(s) instead of the actual number of dopants. In some cases, ions in a beam undergo charge exchange phenomenon, interacting with residual gas molecules in a beamline. This charge exchange...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Sano, Makoto, Yamada, Tatsuya, Sato, Fumiaki, Tsukihara, Mitsukuni, Sugitani, Michiro
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	BEAM CURRENTS CHARGE EXCHANGE CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY DOPED MATERIALS DOSIMETRY ELECTRIC CURRENTS FARADAY CUPS IMPURITIES ION IMPLANTATION
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