An interatomic potential model for molecular dynamics simulation of silicon etching by Br+-containing plasmas
An interatomic potential model for Si–Br systems has been developed for performing classical molecular dynamics (MD) simulations. This model enables us to simulate atomic-scale reaction dynamics during Si etching processes by Br+-containing plasmas such as HBr and Br2 plasmas, which are frequently u...
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Veröffentlicht in: | Journal of applied physics 2008-10, Vol.104 (7) |
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Format: | Artikel |
Sprache: | eng |
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Online-Zugang: | Volltext |
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